[STUDY OF PANCREATIC SECRETION IN MAN USING THE RADIOELEMENTS NA-24 AND K-42].

C. Debray,M. Roux,C. Sautier,J. TR'EMOLIERES,J. Hardouin

1964-05-01

Abstract:

What problem does this paper attempt to address?

Tuning Electrical Conductance in Bilayer MoS2 Through Defect-Mediated Interlayer Chemical Bonding

Lili Zhang,Gang Wang,Yubo Zhang,Zhipeng Cao,Yu Wang,Tianjun Cao,Cong Wang,Bin Cheng,Wenqing Zhang,Xiangang Wan,Junhao Lin,Shi-Jun Liang,Feng Miao

DOI: https://doi.org/10.1021/acsnano.0c03665

IF: 17.1

2020-01-01

ACS Nano

Abstract:Interlayer interaction could substantially affect the electrical transport in transition metal dichalcogenides, serving as an effective way to control the device performance. However, it is still challenging to utilize interlayer interaction in weakly interlayer-coupled materials such as pristine MoS2 to realize layer-dependent tunable transport behavior. Here, we demonstrate that, by substitutional doping of vanadium atoms in the Mo sites of the MoS2 lattice, the vanadium-doped monolayer MoS2 device exhibits an ambipolar field effect characteristic, while its bilayer device demonstrates a heavy p-type field effect feature, in sharp contrast to the pristine monolayer and bilayer MoS2 devices, both of which show similar n-type electrical transport behaviors. Moreover, the electrical conductance of the doped bilayer MoS2 device is drastically enhanced with respect to that of the doped monolayer MoS2 device. Employing first-principle calculations, we reveal that such striking behaviors arise from the presence of electrical transport networks associated with the enhanced interlayer hybridization of S-3pz orbitals between adjacent layers activated by vanadium dopants in the bilayer MoS2, which is nevertheless absent in its monolayer counterpart. Our work highlights that the effect of dopant not only is confined in the in-plane electrical transport behavior but also could be used to activate out-of-plane interaction between adjacent layers in tailoring the electrical transport of the bilayer transitional metal dichalcogenides, which may bring different applications in electronic and optoelectronic devices.
Modulating Carrier Density and Transport Properties of Mos2 by Organic Molecular Doping and Defect Engineering

Yongqing Cai,Hangbo Zhou,Gang Zhang,Yong-Wei Zhang

DOI: https://doi.org/10.1021/acs.chemmater.6b03539

IF: 10.508

2016-01-01

Chemistry of Materials

Abstract:Using first-principles calculations, we investigate the effect of molecular doping and sulfur vacancy on the electronic properties and charge modulation of monolayer MoS2. It is found that tetrathiafulvalene and dimethyl-p-phenylenediamine molecules are effective donors, whereas tetracyanoethylene (TCNE) and tetracyanoquinodimethane (TCNQ) are effective acceptors, and all these molecules are able to shift the work function of MoS2. For MoS2 containing sulfur vacancies, these molecules are able to change the position of the defect levels within the band gap and modulate the carrier density around the defect center. Charge transfer analysis shows that TCNE and TCNQ induce a free-carrier depletion of the defect states, which is beneficial for the suppression of the nonradiative trionic decay and a higher excitonic efficiency due to a decrease in the screening of excitons. Furthermore, the effects of molecular adsorption on Seebeck coefficient of MoS2 are also explored. Our work suggests that an enhanced excitonic efficiency of MoS2 may be achieved via proper defect engineering and molecular doping arising from the charge density modulation and charge screening.
Analyzing the Carrier Mobility in Transition-metal Dichalcogenide MoS2 Field-effect Transistors

Zhihao Yu,Zhun-Yong Ong,Songlin Li,Jian-Bin Xu,Gang Zhang,Yong-Wei Zhang,Yi Shi,Xinran Wang

DOI: https://doi.org/10.48550/arXiv.1701.02079

2017-01-09

Materials Science

Abstract:Transition-metal dichalcogenides (TMDCs) are important class of two-dimensional (2D) layered materials for electronic and optoelectronic applications, due to their ultimate body thickness, sizable and tunable bandgap, and decent theoretical room-temperature mobility of hundreds to thousands cm2/Vs. So far, however, all TMDCs show much lower mobility experimentally because of the collective effects by foreign impurities, which has become one of the most important limitations for their device applications. Here, taking MoS2 as an example, we review the key factors that bring down the mobility in TMDC transistors, including phonons, charged impurities, defects, and charge traps. We introduce a theoretical model that quantitatively captures the scaling of mobility with temperature, carrier density and thickness. By fitting the available mobility data from literature over the past few years, we are able to obtain the density of impurities and traps for a wide range of transistor structures. We show that interface engineering such as oxide surface passivation, high-k dielectrics and BN encapsulation could effectively reduce the impurities, leading to improved device performances. For few-layer TMDCs, we analytically model the lopsided carrier distribution to elucidate the experimental increase of mobility with the number of layers. From our analysis, it is clear that the charge transport in TMDC samples is a very complex problem that must be handled carefully. We hope that this Review can provide new insights and serve as a starting point for further improving the performance of TMDC transistors.
Layer Dependent Interfacial Transport and Optoelectrical Properties of MoS2 on Ultra-flat Metals

Hao Lee,S. Deshmukh,Jing Wen,V.Z. Costa,J. S. Schuder,M. Sanchez,A. S. Ichimura,Eric Pop,Bin Wang,A. K. M. Newaz

DOI: https://doi.org/10.1021/acsami.9b09868

2019-08-02

Abstract:Transition metal dichalcogenides (TMDs) are layered semiconducting van der Waal crystals and promising materials for a wide range of electronic and optoelectronic devices. Realizing practical electrical and optoelectronic device applications requires a connection between a metal junction and a TMD semiconductor. Hence, a complete understanding of electronic band alignments and the potential barrier heights governing the transport through a metal-TMD-metal junction is critical. But, there is a knowledge gap; it is not clear how the energy bands of a TMD align while in contact with a metal as a function of the number of layers. In pursuit of removing this knowledge gap, we have performed conductive atomic force microscopy (CAFM) of few layered (1-5) MoS2 immobilized on ultra-flat conducting Au surfaces (root mean square (RMS) surface roughness <0.2 nm) and indium tin oxide (ITO) substrate (RMS surface roughness <0.7 nm) forming a vertical metal (conductive-AFM tip)-semiconductor-metal device. We have observed that the current increases as the number of layers increases up to 5 layers. By applying Fowler-Nordheim tunneling theory, we have determined the barrier heights for different layers and observed that the barrier height decreases as the number of layers increases. Using density functional theory (DFT) calculation, we successfully demonstrated that the barrier height decreases as the layer number increases. By illuminating the TMDs on a transparent ultra-flat conducting ITO substrate, we observed a reduction in current when compared to the current measured in the dark, hence demonstrating negative photoconductivity. Our study provides a fundamental understanding of the local electronic and optoelectronic behaviors of TMD-metal junction, and may pave an avenue toward developing nanoscale electronic devices with tailored layer-dependent transport properties.

Mesoscale and Nanoscale Physics,Materials Science
Tuning Electrical Conductance in Bilayer MoS 2 through Defect-Mediated Interlayer Chemical Bonding

Lili Zhang,Gang Wang,Yubo Zhang,Zhipeng Cao,Yu Wang,Tianjun Cao,Cong Wang,Bin Cheng,Wenqing Zhang,Xiangang Wan,Junhao Lin,Shi-Jun Liang,Feng Miao

DOI: https://doi.org/10.1021/acsnano.0c03665

IF: 17.1

2020-07-10

ACS Nano

Abstract:Interlayer interaction could substantially affect the electrical transport in transition metal dichalcogenides, serving as an effective way to control the device performance. However, it is still challenging to utilize interlayer interaction in weakly interlayer-coupled materials such as pristine MoS2 to realize layer-dependent tunable transport behavior. Here, we demonstrate that, by substitutional doping of vanadium atoms in the Mo sites of the MoS2 lattice, the vanadium-doped monolayer MoS2 device exhibits an ambipolar field effect characteristic, while its bilayer device demonstrates a heavy p-type field effect feature, in sharp contrast to the pristine monolayer and bilayer MoS2 devices, both of which show similar n-type electrical transport behaviors. Moreover, the electrical conductance of the doped bilayer MoS2 device is drastically enhanced with respect to that of the doped monolayer MoS2 device. Employing first-principle calculations, we reveal that such striking behaviors arise from the presence of electrical transport networks associated with the enhanced interlayer hybridization of S-3pz orbitals between adjacent layers activated by vanadium dopants in the bilayer MoS2, which is nevertheless absent in its monolayer counterpart. Our work highlights that the effect of dopant not only is confined in the in-plane electrical transport behavior but also could be used to activate out-of-plane interaction between adjacent layers in tailoring the electrical transport of the bilayer transitional metal dichalcogenides, which may bring different applications in electronic and optoelectronic devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsnano.0c03665?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsnano.0c03665</a>.Additional information (<a class="ext-link" href="/doi/suppl/10.1021/acsnano.0c03665/suppl_file/nn0c03665_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology
Two-dimensional electronic transport and surface electron accumulation in MoS2

M. D. Siao,W. C. Shen,R. S. Chen,Z. W. Chang,M. C. Shih,Y. P. Chiu,C.-M. Cheng

DOI: https://doi.org/10.1038/s41467-018-03824-6

IF: 16.6

2018-04-12

Nature Communications

Abstract:Because the surface-to-volume ratio of quasi-two-dimensional materials is extremely high, understanding their surface characteristics is crucial for practically controlling their intrinsic properties and fabricating p-type and n-type layered semiconductors. Van der Waals crystals are expected to have an inert surface because of the absence of dangling bonds. However, here we show that the surface of high-quality synthesized molybdenum disulfide (MoS2) is a major n-doping source. The surface electron concentration of MoS2 is nearly four orders of magnitude higher than that of its inner bulk. Substantial thickness-dependent conductivity in MoS2 nanoflakes was observed. The transfer length method suggested the current transport in MoS2 following a two-dimensional behavior rather than the conventional three-dimensional mode. Scanning tunneling microscopy and angle-resolved photoemission spectroscopy measurements confirmed the presence of surface electron accumulation in this layered material. Notably, the in situ-cleaved surface exhibited a nearly intrinsic state without electron accumulation.

multidisciplinary sciences
Reversal of charge transfer doping on the negative electronic compressibility surface of MoS2

Liam Watson,Iolanda Di Bernardo,James Blyth,Benjamin Lowe,Thi-Hai-Yen Vu,Daniel McEwen,Mark T. Edmonds,Anton Tadich,Michael S. Fuhrer

2024-09-18

Abstract:The strong electron-electron interaction in transition metal dichalcogenides (TMDs) gives rise to phenomena such as strong exciton and trion binding and excitonic condensation, as well as large negative exchange and correlation contributions to the electron energies, resulting in negative electronic compressibility. Here we use angle-resolved photoemission spectroscopy to demonstrate a striking effect of negative electronic compressibility in semiconducting TMD MoS2 on the charge transfer to and from a partial overlayer of monolayer semimetallic WTe2. We track the changes in binding energy of the valence bands of both WTe2 and MoS2 as a function of surface transfer doping with donor (K) and acceptor (F4-TCNQ) species. Donor doping increases the binding energy of the MoS2 valence band, as expected, while counterintuitively reducing the binding energy of the WTe2 valence bands and core levels. The inverse effect is observed for acceptor doping, where a typical reduction in the MoS2 binding energies is accopanied by an unexpected increase in those of WTe2. The observations imply a reversal of the expected charge transfer; donor (acceptor) deposition decreases (increases) the carrier density in the WTe2 adlayer. The charge transfer reversal is a direct consequence of the negative electronic compressibility of the MoS2 surface layer, for which addition (subtraction) of charge leads to attraction (repulsion) of further charge from neighbouring layers. These findings highlight the importance of many-body interactions for the electrons in transition metal dichalcogenides and underscore the potential for exploring strongly correlated quantum states in two-dimensional semiconductors.

Strongly Correlated Electrons
Electronic and Optical properties of transition metal dichalcogenides under symmetric and asymmetric field-effect doping

Peiliang Zhao,Jin Yu,H. Zhong,Malt. Rosner,Mikhail I. Katsnelson,Shengjun Yuan

DOI: https://doi.org/10.1088/1367-2630/aba8d2

2021-01-14

Abstract:Doping via electrostatic gating is a powerful and widely used technique to tune the electron densities in layered materials. The microscopic details of how these setups affect the layered material are, however, subtle and call for careful theoretical treatments. Using semiconducting monolayers of transition metal dichalcogenides (TMDs) as prototypical systems affected by electrostatic gating, we show that the electronic and optical properties change indeed dramatically when the gating geometry is properly taken into account. This effect is implemented by a self-consistent calculation of the Coulomb interaction between the charges in different sub-layers within the tight-binding approximation. Thereby we consider both, single- and double-sided gating. Our results show that, at low doping levels of $10^{13}$ cm$^{-2}$, the electronic bands of monolayer TMDs shift rigidly for both types of gating, and subsequently undergo a Lifshitz transition. When approaching the doping level of $10^{14}$ cm$^{-2}$, the band structure changes dramatically, especially in the case of single-sided gating where we find that monolayer \ce{MoS2} and \ce{WS2} become indirect gap semiconductors. The optical conductivities calculated within linear response theory also show clear signatures of these doping-induced band structure renormalizations. Our numerical results based on light-weighted tight-binding models indicate the importance of electronic screening in doped layered structures, and pave the way for further understanding gated super-lattice structures formed by mutlilayers with extended Moiré pattern.

Mesoscale and Nanoscale Physics
Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform

Xu Cui,Gwan-Hyoung Lee,Young Duck Kim,Ghidewon Arefe,Pinshane Y. Huang,Chul-Ho Lee,Daniel A. Chenet,Xian Zhang,Lei Wang,Fan Ye,Filippo Pizzocchero,Bjarke S. Jessen,Kenji Watanabe,Takashi Taniguchi,David A. Muller,Tony Low,Philip Kim,James Hone

DOI: https://doi.org/10.48550/arXiv.1412.5977

2014-12-18

Materials Science

Abstract:Atomically thin two-dimensional (2D) semiconductors such as molybdenum disulphide (MoS2) hold great promise in electrical, optical, and mechanical devices and display novel physical phenomena such as coupled spin-valley physics and the valley Hall effect. However, the electron mobility of mono- and few-layer MoS2 has so far been substantially below theoretically predicted limits, particularly at low temperature (T), which has hampered efforts to observe its intrinsic quantum transport behaviors. Potential sources of disorder and scattering include both defects such as sulfur vacancies in the MoS2 itself, and extrinsic sources such as charged impurities and remote optical phonons from oxide dielectrics. To reduce extrinsic scattering and approach the intrinsic limit, we developed a van der Waals (vdW) heterostructure device platform where MoS2 layers are fully encapsulated within hexagonal boron nitride (hBN), and electrically contacted in a multi-terminal geometry using gate-tunable graphene electrodes. Multi-terminal magneto-transport measurements show dramatic improvements in performance, including a record-high Hall mobility reaching 34,000 cm2/Vs for 6-layer MoS2 at low T. Comparison to theory shows a decrease of 1-2 orders of magnitude in the density of charged impurities, indicating that performance at low T in previous studies was limited by extrinsic factors rather than defects in the MoS2. We also observed Shubnikov-de Haas (SdH) oscillations for the first time in high-mobility monolayer and few-layer MoS2. This novel device platform therefore opens up a new way toward measurements of intrinsic properties and the study of quantum transport phenomena in 2D semiconducting materials.
Convection‐Flow‐Assisted Preparation of a Strong Electron Dopant, Benzyl Viologen, for Surface‐Charge Transfer Doping of Molybdenum Disulfide

Keigo Matsuyama,Akito Fukui,Kohei Miura,Hisashi Ichimiya,Yuki Aoki,Yuki Yamada,Atsushi Ashida,Takeshi Yoshimura,Norifumi Fujimura,Daisuke Kiriya

DOI: https://doi.org/10.1002/open.201900169

2019-07-01

ChemistryOpen

Abstract:Transition metal dichalcogenides (TMDCs) have received attention as atomically thin post‐silicon semiconducting materials. Tuning the carrier concentrations of the TMDCs is important, but their thin structure requires a non‐destructive modulation method. Recently, a surface‐charge transfer doping method was developed based on contacting molecules on TMDCs, and the method succeeded in achieving a large modulation of the electronic structures. The successful dopant is a neutral benzyl viologen (BV0); however, the problem remains of how to effectively prepare the BV0 molecules. A reduction process with NaBH4 in water has been proposed as a preparation method, but the NaBH4 simultaneously reacts vigorously with the water. Here, a simple method is developed, in which the reaction vial is placed on a hotplate and a fragment of air‐stable metal is used instead of NaBH4 to prepare the BV0 dopant molecules. The prepared BV0 molecules show a strong doping ability in terms of achieving a degenerate situation of a TMDC, MoS2. A key finding in this preparation method is that a convection flow in the vial effectively transports the produced BV0 to a collection solvent. This method is simple and safe and facilitates the tuning of the optoelectronic properties of nanomaterials by the easily‐handled dopant molecules.

chemistry, multidisciplinary
Novel doping alternatives for single-layer transition metal dichalcogenides

Nicolas Onofrio,David Guzman,Alejandro Strachan

DOI: https://doi.org/10.1063/1.4994997

IF: 2.877

2017-11-14

Journal of Applied Physics

Abstract:Successful doping of single-layer transition metal dichalcogenides (TMDs) remains a formidable barrier to their incorporation into a range of technologies. We use density functional theory to study doping of molybdenum and tungsten dichalcogenides with a large fraction of the periodic table. An automated analysis of the energetics, atomic and electronic structure of thousands of calculations results in insightful trends across the periodic table and points out promising dopants to be pursued experimentally. Beyond previously studied cases, our predictions suggest promising substitutional dopants that result in p-type transport and reveal interesting physics behind the substitution of the metal site. Doping with early transition metals (TMs) leads to tensile strain and a significant reduction in the bandgap. The bandgap increases and strain is reduced as the d-states are filled into the mid TMs; these trends reverse as we move into the late TMs. Additionally, the Fermi energy increases monotonously as the d-shell is filled from the early to mid TMs and we observe few to no gap states, indicating the possibility of both p- (early TMs) and n- (mid TMs) type doping. Quite surprisingly, the simulations indicate the possibility of interstitial doping of TMDs; the energetics reveal that a significant number of dopants, increasing in number from molybdenum disulfide to diselenide and to ditelluride, favor the interstitial sites over adsorbed ones. Furthermore, calculations of the activation energy associated with capturing the dopants into the interstitial site indicate that the process is kinetically possible. This suggests that interstitial impurities in TMDs are more common than thought to date and we propose a series of potential interstitial dopants for TMDs relevant for application in nanoelectronics based on a detailed analysis of the predicted electronic structures.

physics, applied
Ultrafast carrier dynamics in vanadium-doped MoS2 alloys

Bhuvan Upadhyay,Rahul Sharma,Dipak Maity,Tharangattu N Narayan,Suman Kalyan Pal

DOI: https://doi.org/10.1039/d3nr03337f

IF: 6.7

2023-10-20

Nanoscale

Abstract:Substitutional doping is a most promising approach to manipulate the electronic and optical properties of two-dimensional (2D) transition metal dichalcogenides (TMDCs). In addition to inducing magnetism, vanadium (V) doping can lead to semiconductor-metal transition in TMDCs. However, the dynamics of charge carriers that governs the optoelectronic properties of doped TMDCs has been rarely revealed. In this work, we have investigated the dynamics of photocarriers in pristine and V-doped monolayer (ML) MoS2. Comparison of the transient absorption (TA) spectra of ML MoS2 with lightly (≤1%) and heavily (3.62%) V-doped MoS2 infers the induction of additional energy states in the doped materials giving rise to new low energy bleach features in the TA spectra. The quasiparticle band structure of MoS2 is found to disappear at sufficiently high V doping due to the presence of impurity bands. An attempt has also been made to study the manipulation of the carrier lifetime with V doping in MoS2. Our TA kinetic measurements suggest that the decay kinetics of the carriers becomes slower with increasing doping percentage and at a higher doping level the carriers survive for a much longer time compared to pristine MoS2. Furthermore, we have identified a new electronic transition (NET) in heavily V-doped MoS2 at high pump fluences.
Quasi‐Continuous Tuning of Carrier Polarity in Monolayered Molybdenum Dichalcogenides Through Substitutional Vanadium Doping

Lili Zhang,Zhe Wang,Junwei Zhang,Bin Chen,Zhaoming Liang,Xiangning Quan,Yudi Dai,Junfeng Huang,Yantao Wang,Shi-Jun Liang,Mingsheng Long,Mingsu Si,Feng Miao,Yong Peng

DOI: https://doi.org/10.1002/adfm.202204760

IF: 19

2022-01-01

Advanced Functional Materials

Abstract:Semiconducting 2D transition metal dichalcogenides (2D TMDs) with tunable electronic properties are a fundamental prerequisite for the development of next generation advanced electronic/optoelectronic devices. However, controllable and quasi-continuous tuning carrier polarity of monolayered MoS2 ranging from intrinsic n-type to p-type via ambipolarity still remains a challenge. Herein, quasi-continuous tailoring of carrier polarity of monolayered MoS2 through substitutional doping of molybdenum (Mo) with vanadium (V) atoms is presented. Atomic distribution in real space characterized by spherical aberration-corrected scanning transmission electron microscopy (Cs-STEM) reveals that the V atoms randomly substitute Mo in monolayered MoS2, and its doping concentration can be tuned in a wide range from 0.7 to approximate to 10 at.%. Electrical measurements confirm that the carrier polarity of the monolayered MoS2 can be tuned from intrinsic n-type to p-type via ambipolarity depending on the V doping degree, consistent with the density functional theory calculations. Moreover, this doping strategy is demonstrated to extend to other monolayered 2D TMDs by using MoSe2 as a model material, owing to a good universality.
Selective Surface Modification and Layer Thinning of MoS 2 via Ultraviolet-Light Irradiation in an Ionic Solution: Implications for Multifunctional Nanoelectronic Devices

Lei Zhang,Kun Liu,Fanyi Kong,Xue Han,Jianxun Dai,Mengmeng Wang,Changsen Sun,Huolin Huang,Lujun Pan,Dawei Li

DOI: https://doi.org/10.1021/acsanm.3c00361

IF: 6.14

2023-03-28

ACS Applied Nano Materials

Abstract:The electrical properties of transition-metal dichalcogenides (TMDs), such as MoS2, are highly dependent on carrier doping and layer thickness. The ability to selectively control these two critical characteristics is of great importance in order to develop TMD-based multifunctional nanoelectronic device applications, which remains challenging. Here, we report a strategy for controllable surface modification and layer thinning of MoS2 via ultraviolet (UV)-light irradiation in a silver ionic (Ag+) solution environment. The results show that, by adjustment of the UV irradiation time, nanostructured Ag ultrathin films (∼2.9 nm) are uniformly deposited on monolayer MoS2 and can lead to a controllable p-type doping effect, while the thickness of MoS2 from few-layer to thick-layer could be thinned to the atomic monolayer limit. Both Ag nanostructure deposition and layer thinning have been evidenced to initiate from the edges of MoS2, independent of the edge type, thus revealing a unique UV-light-assisted defect-induced surface modification and layer-thinning mechanism. Overall, this study provides a simple methodology for the selective control of doping and layer thickness in TMDs, paving the way for developing multifunctional nanoelectronics and integrated optoelectronics.

materials science, multidisciplinary,nanoscience & nanotechnology
Nonvolatile N-Type Doping and Metallic State in Multilayer-MoS2 Induced by Hydrogenation Using Ionic-Liquid Gating.

Wenxuan Guo,Mengge Li,Xiaoxiang Wu,Yali Liu,Tianjian Ou,Cong Xiao,Zhanjie Qiu,Yuan Zheng,Yewu Wang

DOI: https://doi.org/10.1021/acs.nanolett.2c03159

IF: 10.8

2022-01-01

Nano Letters

Abstract:Manipulation of the carrier density of layered transition-metal dichalcogenides (TMDs) is of fundamental significance for a wide range of electronic and optoelectronic applications. Herein, we applied the ionic-liquid-gating (ILG) method to inject the smallest ions, H+, into layered MoS2 to manipulate its carrier concentration. The measurements demonstrate that the injection of H+ realizes a nonvolatile n-type doping and metallic state in multilayer-MoS2 with a concentration of injection electron of ∼1.08 × 1013 cm-2 but has no effect on monolayer-MoS2, which clearly reveals that the H+ is injected into the interlayer of MoS2, not in the crystal lattice. The H+-injected multilayer-MoS2 was then used as the contact electrodes of a monolayer-MoS2 field effect transistor to improve the contact quality, and its performance has been enhanced. Our work deepens the understanding of the ILG technology and extends its application in TMDs.
Control of Charge Carriers and Band Structure in 2D Monolayer Molybdenum Disulfide via Covalent Functionalization.

M. Ratner,G. Schatz,Leighton O. Jones,Martín A. Mosquera

DOI: https://doi.org/10.1021/acsami.9b19639

2020-01-03

Abstract:The fine tuning of electro optic properties is critical for high performing technologies. This is now obtainable with advanced nanostructures, particularly 2D monolayer materials such as molybdenum disulfide (MoS2). Using spin-polarized periodic density functional theory (DFT), we find the direct band gap (K→K') can be chemically tuned with covalently bound functional groups. With an electron withdrawing group such as fluorine, we observe one occupied α and one unoccupied β bands, which correspond to the addition of an α electron and a β hole; confirmed with the spin difference (Qα-Qβ) being 1. By increasing the electron donating behavior with replacement of F by H and then by Me, the occupied (valence) α band shifts upwards in energy relative to the Fermi energy, and the unoccupied β shifts down until they are in contact with the Fermi energy. In addition, both the α and β unoccupied (conduction) bands of the MoS2 shift down, relative to the Fermi energy, until in contact with the Fermi and the system can be described as metallic. The MoS2+F system is thus a small gap semiconductor (0.96 eV), and the MoS2+H and MoS2+Me gaps are 0.21 eV and 0 eV (metallic), respectively. Spin density calculations illustrate the semi localized nature of the α spin, however this is not formed from the radical of the functionalizing group, but rather, the resulting unpaired electron is on the sulfur atom after radical abstraction to form a covalent bond with the group. 5 and 6 membered heterocycles were studied and further confirm these observations. Distinct from typical functional groups such as phenyl, we find evidence for the covalent bonding of pyrrole, cyclopentadiene and pyridine to a sulfur atom of the MoS2 surface, from the new α and β bands in the band structure. The charge carrier nature of the 2D monolayers of functionalized MoS2 can be further tuned with charge doping (hole or electron), such that even the metallic systems can be returned to semiconducting states, but importantly, as p type conductors. Semi localization of the spin states and control of the band gap can be generalized to other covalently functionalized 2D materials and appears suitable for electronics applications, such as photoluminescence devices, contact-free transistors and quantum communication.

Chemistry,Medicine,Physics,Materials Science
Intrinsically Substitutional Carbon Doping in CVD-Grown Monolayer MoS2 and the Band Structure Modulation

Tao Liang,Mohammad Rezwan Habib,Han Xiao,Shuang Xie,Yuhan Kong,Cui Yu,Hideo Iwai,Daisuke Fujita,Nobutaka Hanagata,Hongzheng Chen,Zhihong Feng,Mingsheng Xu

DOI: https://doi.org/10.1021/acsaelm.0c00076

IF: 4.494

2020-01-01

ACS Applied Electronic Materials

Abstract:Heterogeneous atom doping has been proven as an efficient route to tune the physical and chemical properties of semiconductors, represented by the technically mature boron and phosphorus doping in bulk silicon. In the two-dimensional (2D) transitional-metal dichalcogenides semiconductors, substitutional doping dominates compared with the interstitial sites doping due to the ultrathin nature of 2D materials. However, unintentional doping can also obscure the structure-property relationship and cause the deviations from the ideally optical/electrical performances. Here, substitutional carbon doping into the monolayer molybdenum disulfide (MoS2) lattice during the normal chemical vapor deposition (CVD) synthesis process is discovered through a thorough analysis of the intermediate and final reaction products. The carbon originates from the relatively low-purity molybdenum precursor, which can be completely eliminated when a high-purity molybdenum precursor is utilized. The carbon-doped monolayer MoS2 exhibits mid-gap states brought by the Mo-d, S-p, and C-p orbital hybridization and gradually reduced band gaps as the doping concentration increases. As a result, the suppressed photoluminescence (PL) intensity and red shift PL position are observed. The finding is fundamental for understanding the unintentional carbon doping process in CVD growth of 2D semiconductors and identifies a source for the inconsistent PL performances in the CVD-derived samples.
Layer-dependent Chemically Induced Phase Transition of Two-dimensional MoS2.

Lifei Sun,Xingxu Yan,Jingying Zheng,Hongde Yu,Zhixing Lu,Shang-Peng Gao,Lina Liu,Xiaoqing Pan,Dong Wang,Zhiguo Wang,Peng Wang,Liying Jiao

DOI: https://doi.org/10.1021/acs.nanolett.8b00452

IF: 10.8

2018-01-01

Nano Letters

Abstract:Two-dimensional (2D) transition metal dichalcogenides (TMDCs) with layered structures provide a unique platform for exploring the effect of number of layers on their fundamental properties. However, the thickness scaling effect on the chemical properties of these materials remains unexplored. Here, we explored the chemically induced phase transition of 2D molybdenum disulfide (MoS2) from both experimental and theoretical aspects and observed that the critical electron injection concentration and the duration required for the phase transition of 2D MoS2 increased with decreasing number of layers. We further revealed that the observed dependence originated from the layer-dependent density of states of 2H-MoS2 , which results in decreasing phase stability for 2H-MoS2 with increasing number of layers upon electron doping. Also, the much larger energy barrier for the phase transition of monolayer MoS2 induces the longer reaction time required for monolayer MoS2 as compared to multilayer MoS2 . The layer-dependent phase transition of 2D MoS2 allows for the chemical construction of semiconducting-metallic heterophase junctions and, subsequently, the fabrications of rectifying diodes and all 2D field effect transistors and thus opens a new avenue for building ultrathin electronic devices. In addition, these new findings elucidate how electronic structures affect the chemical properties of 2D TMDCs and, therefore, shed new light on the controllable chemical modulations of these emerging materials.
Understanding Iron-Doping Modulating Domain Orientation and Improving the Device Performance of Monolayer Molybdenum Disulfide

Junbo Yang,Ling Huang,Hui Li,Xiaohui Li,Luying Song,Yanan Peng,Ruihan Xu,Xia Wen,Hang Sun,Yulin Jiang,Jun He,Jianping Shi

DOI: https://doi.org/10.1021/acs.nanolett.4c03264

IF: 10.8

2024-10-08

Nano Letters

Abstract:Domain orientation modulation and controlled doping of two-dimensional (2D) transition-metal dichalcogenides (TMDCs) are two pivotal tasks for synthesizing wafer-scale single crystals and boosting device performances. However, realizing two such targets and uncovering internal physical mechanisms remain daunting challenges. We develop an accurate Fe doping strategy, which enables domain orientation control and electron mobility improvement of monolayer MoS(2). By tuning of the Fe dopant dosages,...

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy

Chih-Pin Lu,Guohong Li,Jinhai Mao,Li-Min Wang,Eva Y. Andrei

DOI: https://doi.org/10.48550/arXiv.1405.2367

2014-05-09

Mesoscale and Nanoscale Physics

Abstract:The discovery of graphene has put the spotlight on other layered materials including transition metal dichalcogenites (TMD) as building blocks for novel heterostructures assembled from stacked atomic layers. Molybdenum disulfide, MoS2, a semiconductor in the TMD family, with its remarkable thermal and chemical stability and high mobility, has emerged as a promising candidate for post-silicon applications such as switching, photonics, and flexible electronics. Since these rely on controlling the position of the Fermi energy (EF), it is crucial to understand its dependence on doping and gating. Here we employed scanning tunneling microscopy (STM) and spectroscopy (STS) with gating capabilities to measure the bandgap and the position of EF in MoS2, and to track its evolution with gate voltage. For bulk samples, the measured bandgap (~1.3eV) is comparable to the value obtained by photoluminescence, and the position of EF (~0.35eV) below the conduction band, is consistent with n-doping reported in this material. Using topography together with spectroscopy we traced the source of the n-doping in bulk MoS2 samples to point defects, which we attribute to S vacancies. In contrast, for thin films deposited on SiO2, we found significantly higher levels of n-doping that cannot be attributed to S vacancies. By combining gated STS with transport measurements in a field effect transistor (FET) configuration, we demonstrate that the higher levels of n-doping in thin film samples is due to charge traps at the sample-substrate interface.

[STUDY OF PANCREATIC SECRETION IN MAN USING THE RADIOELEMENTS NA-24 AND K-42].

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