Abstract:The fine tuning of electro optic properties is critical for high performing technologies. This is now obtainable with advanced nanostructures, particularly 2D monolayer materials such as molybdenum disulfide (MoS2). Using spin-polarized periodic density functional theory (DFT), we find the direct band gap (K→K') can be chemically tuned with covalently bound functional groups. With an electron withdrawing group such as fluorine, we observe one occupied α and one unoccupied β bands, which correspond to the addition of an α electron and a β hole; confirmed with the spin difference (Qα-Qβ) being 1. By increasing the electron donating behavior with replacement of F by H and then by Me, the occupied (valence) α band shifts upwards in energy relative to the Fermi energy, and the unoccupied β shifts down until they are in contact with the Fermi energy. In addition, both the α and β unoccupied (conduction) bands of the MoS2 shift down, relative to the Fermi energy, until in contact with the Fermi and the system can be described as metallic. The MoS2+F system is thus a small gap semiconductor (0.96 eV), and the MoS2+H and MoS2+Me gaps are 0.21 eV and 0 eV (metallic), respectively. Spin density calculations illustrate the semi localized nature of the α spin, however this is not formed from the radical of the functionalizing group, but rather, the resulting unpaired electron is on the sulfur atom after radical abstraction to form a covalent bond with the group. 5 and 6 membered heterocycles were studied and further confirm these observations. Distinct from typical functional groups such as phenyl, we find evidence for the covalent bonding of pyrrole, cyclopentadiene and pyridine to a sulfur atom of the MoS2 surface, from the new α and β bands in the band structure. The charge carrier nature of the 2D monolayers of functionalized MoS2 can be further tuned with charge doping (hole or electron), such that even the metallic systems can be returned to semiconducting states, but importantly, as p type conductors. Semi localization of the spin states and control of the band gap can be generalized to other covalently functionalized 2D materials and appears suitable for electronics applications, such as photoluminescence devices, contact-free transistors and quantum communication.

Metallic Transport in Monolayer and Multilayer Molybdenum Disulfides by Molecular Surface Charge Transfer Doping

Tuning Electrical Conductance in Bilayer MoS2 Through Defect-Mediated Interlayer Chemical Bonding

Modulating Carrier Density and Transport Properties of Mos2 by Organic Molecular Doping and Defect Engineering

Analyzing the Carrier Mobility in Transition-metal Dichalcogenide MoS2 Field-effect Transistors

Layer Dependent Interfacial Transport and Optoelectrical Properties of MoS2 on Ultra-flat Metals

Tuning Electrical Conductance in Bilayer MoS 2 through Defect-Mediated Interlayer Chemical Bonding

Demonstration of the Key Substrate-Dependent Charge Transfer Mechanisms Between Monolayer MoS2 and Molecular Dopants

Two-dimensional electronic transport and surface electron accumulation in MoS2

Doping against the native propensity of MoS2: degenerate hole doping by cation substitution.

Reversal of charge transfer doping on the negative electronic compressibility surface of MoS2

Increased Mobility and Reduced Hysteresis of MoS2 Field-Effect Transistors via Direct Surface Precipitation of CsPbBr3-Nanoclusters for Charge Transfer Doping

Controllable Doping of Transition‐Metal Dichalcogenides by Organic Solvents

Electronic and Optical properties of transition metal dichalcogenides under symmetric and asymmetric field-effect doping

Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform

Convection‐Flow‐Assisted Preparation of a Strong Electron Dopant, Benzyl Viologen, for Surface‐Charge Transfer Doping of Molybdenum Disulfide

Novel doping alternatives for single-layer transition metal dichalcogenides

Ultrafast carrier dynamics in vanadium-doped MoS2 alloys

Quasi‐Continuous Tuning of Carrier Polarity in Monolayered Molybdenum Dichalcogenides Through Substitutional Vanadium Doping

Selective Surface Modification and Layer Thinning of MoS 2 via Ultraviolet-Light Irradiation in an Ionic Solution: Implications for Multifunctional Nanoelectronic Devices

Nonvolatile N-Type Doping and Metallic State in Multilayer-MoS2 Induced by Hydrogenation Using Ionic-Liquid Gating.

Control of Charge Carriers and Band Structure in 2D Monolayer Molybdenum Disulfide via Covalent Functionalization.