Abstract:The fine tuning of electro optic properties is critical for high performing technologies. This is now obtainable with advanced nanostructures, particularly 2D monolayer materials such as molybdenum disulfide (MoS2). Using spin-polarized periodic density functional theory (DFT), we find the direct band gap (K→K') can be chemically tuned with covalently bound functional groups. With an electron withdrawing group such as fluorine, we observe one occupied α and one unoccupied β bands, which correspond to the addition of an α electron and a β hole; confirmed with the spin difference (Qα-Qβ) being 1. By increasing the electron donating behavior with replacement of F by H and then by Me, the occupied (valence) α band shifts upwards in energy relative to the Fermi energy, and the unoccupied β shifts down until they are in contact with the Fermi energy. In addition, both the α and β unoccupied (conduction) bands of the MoS2 shift down, relative to the Fermi energy, until in contact with the Fermi and the system can be described as metallic. The MoS2+F system is thus a small gap semiconductor (0.96 eV), and the MoS2+H and MoS2+Me gaps are 0.21 eV and 0 eV (metallic), respectively. Spin density calculations illustrate the semi localized nature of the α spin, however this is not formed from the radical of the functionalizing group, but rather, the resulting unpaired electron is on the sulfur atom after radical abstraction to form a covalent bond with the group. 5 and 6 membered heterocycles were studied and further confirm these observations. Distinct from typical functional groups such as phenyl, we find evidence for the covalent bonding of pyrrole, cyclopentadiene and pyridine to a sulfur atom of the MoS2 surface, from the new α and β bands in the band structure. The charge carrier nature of the 2D monolayers of functionalized MoS2 can be further tuned with charge doping (hole or electron), such that even the metallic systems can be returned to semiconducting states, but importantly, as p type conductors. Semi localization of the spin states and control of the band gap can be generalized to other covalently functionalized 2D materials and appears suitable for electronics applications, such as photoluminescence devices, contact-free transistors and quantum communication.

Two-dimensional electronic transport and surface electron accumulation in MoS2

Metallic Transport in Monolayer and Multilayer Molybdenum Disulfides by Molecular Surface Charge Transfer Doping

Control of Charge Carriers and Band Structure in 2D Monolayer Molybdenum Disulfide via Covalent Functionalization.

Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform

Layer-dependent Chemically Induced Phase Transition of Two-dimensional MoS2.

Epitaxy of Wafer-Scale Single-Crystal MoS2 Monolayer Via Buffer Layer Control

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

Low Temperature Nanoscale Electronic Transport on the MoS_2 surface

Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates

Mesoscale Imperfections in MoS2 Atomic Layers Grown by Vapor Transport Technique

Mesoscale Imperfections in MoS2 Atomic Layers Grown by a Vapor Transport Technique.

P-type Doping in Large-Area Monolayer MoS2 by Chemical Vapor Deposition.

Monolayer MoS<sub>2</sub> of high mobility grown on SiO<sub>2</sub> substrate by two-step chemical vapor deposition

In-plane anisotropy in van der Waals epitaxial MoS 2 on MoO 2 (010)

High field-effect performance and intrinsic scattering in the two-dimensional MoS2 semiconductors

Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy

Momentum resolved ground/excited states and the ultra-fast excited state dynamics of monolayer MoS2

Controllable Regulation of MoS2 Surface Atomic Exposure for Boosting Interfacial Polarization and Microwave Absorption

Field Effect Properties of Single-Layer MoS 2(1− X ) Se 2 X Nanosheets Produced by a One-Step CVD Process

Intrinsic Electrical Transport and Performance Projections of Synthetic Monolayer MoS2 Devices

Ultimate Thin Vertical p-n Junction Composed of 2D Layered Molybdenum Disulfide