Abstract:The ability to synthesize high-quality samples over large areas and at low cost is one of the biggest challenges during the developmental stage of any novel material. While chemical vapor deposition (CVD) methods provide a promising low-cost route for CMOS compatible, large-scale growth of materials, it often falls short of the high-quality demands in nanoelectronics and optoelectronics. We present large-scale CVD synthesis of single- and few- layered MoS2 using direct vapor-phase sulfurization of MoO2, which enables us to obtain extremely high-quality single-crystal monolayer MoS2 samples with field-effect mobility exceeding 30 cm2/Vs in monolayers. These samples can be readily synthesized on a variety of substrates, and demonstrate a high-degree of optoelectronic uniformity in Raman and photoluminescence mapping over entire crystals with areas exceeding hundreds of square micrometers. Owing to their high crystalline quality, Raman spectroscopy on these samples reveal a range of multi-phonon processes through peaks with equal or better clarity compared to past reports on mechanically exfoliated samples. This enables us to investigate the layer thickness- and substrate-dependence of the extremely weak phonon processes at 285 cm-1 and 487 cm-1 in 2D MoS2. The ultra-high, optoelectronic-grade crystalline quality of these samples could be further established through photocurrent spectroscopy, which clearly reveal excitonic states at room temperature, a feat that has been previously demonstrated only on device fabricated with mechanically exfoliated that were artificially suspended across trenches. Our method reflects a big step in the development of atomically thin, 2D MoS2 for scalable, high-quality optoelectronics.

Ultimate Thin Vertical p-n Junction Composed of 2D Layered Molybdenum Disulfide

A van der Waals pn heterojunction with organic/inorganic semiconductors

Vertical Heterostructure of Two-Dimensional Mos2 and Wse2 with Vertically Aligned Layers

Junctionless Electric-Double-Layer MoS2 Field-Effect Transistor with a Sub-5 nm Thick Electrostatically Highly Doped Channel

Controlled growth of SnSe/MoS2 vertical p–n heterojunction for optoelectronic applications

2D-MoS2 goes 3D: transferring optoelectronic properties of 2D MoS2 to a large-area thin film

Sub-Nanometer Channels Embedded in Two-Dimensional Materials

Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p-n Junction

Ultrafast-programmable two-dimensional p-n homojunction for high-performance photovoltaics and optoelectronics

Layer Engineering of 2D Semiconductor Junctions.

Van der Waals epitaxial growth and optoelectronics of a vertical MoS2/WSe2 p–n junction

Atomically thin MoS2: A new direct-gap semiconductor

Lateral Monolayer MoSe2 -Wse2 P-N Heterojunctions with Giant Built-In Potentials.

Chemical Vapor Deposition Synthesized Atomically Thin Molybdenum Disulfide with Optoelectronic-Grade Crystalline Quality

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates.

Vertical MoSe2-MoOx p-n heterojunction and its application in optoelectronics.

Two-dimensional electronic transport and surface electron accumulation in MoS2

Gate Tunable Photovoltaic Effect in MoS2 vertical P-N Homostructures

Unveiling the potential of vanadium-doped CVD-grown p-type MoS 2 in vertical homojunction UV–Vis photodiodes

A Single‐Crystal Antimony Trioxide Dielectric for 2D Field‐Effect Transistors

Epitaxy of Wafer-Scale Single-Crystal MoS2 Monolayer Via Buffer Layer Control