Abstract:A finite Schottky barrier and large contact resistance between monolayer MoS2 and electrodes are the major bottlenecks in developing high-performance field-effect transistors (FETs) that hinder the study of intrinsic quantum behaviors such as valley-spin transport at low temperature. A gate-tunable graphene electrode platform has been developed to improve the performance of MoS2 FETs. However, intrinsic misalignment between the work function of pristine graphene and the conduction band of MoS2 results in a large threshold voltage for the FETs, because of which Ohmic contact behaviors are observed only at very high gate voltages and carrier concentrations (~1013 cm-2). Here, we present high-performance monolayer MoS2 FETs with Ohmic contact at a modest gate voltage by using a chemical-vapor-deposited (CVD) nitrogen-doped graphene with a high intrinsic electron carrier density. The CVD nitrogen-doped graphene and monolayer MoS2 hybrid FETs platform exhibited a large negative shifted threshold voltage of -54.2 V and barrier-free Ohmic contact under zero gate voltage. Transparent contact by nitrogen-doped graphene led to a 214% enhancement in the on-current and a four-fold improvement in the field-effect carrier mobility of monolayer MoS2 FETs compared with those of a pristine graphene electrode platform. The transport measurements, as well as Raman and X-ray photoelectron spectroscopy analyses before and after thermal annealing, reveal that the atomic C-N bonding in the CVD nitrogen-doped graphene is responsible for the dominant effects of electron doping. Large-scale nitrogen-doped graphene electrodes provide a promising device platform for the development of high-performance devices and the study of unique quantum behaviors.

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates.

Sub-10 Nm Monolayer MoS2 Transistors Using Single-Walled Carbon Nanotubes As an Evaporating Mask

Monolayer MoS2-based Transistors with Low Contact Resistance by Inserting Ultrathin Al2O3 Interfacial Layer

MoS$_2$ Dual-gate Transistors with Electrostatically Doped Contacts

MoS2 Dual-Gate Transistors with Electrostatically Doped Contacts

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

High-performance monolayer MoS 2 nanosheet GAA transistor

Monolayer Molybdenum Disulfide Transistors with Scaling Dielectric Equivalent Oxide Thickness

Ultimate dielectric scaling of 2D transistors via van der Waals metal integration

Utilizing self-assembled-monolayer-based gate dielectrics to fabricate molybdenum disulfide field-effect transistors

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors.

Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films

Large-scale Chemical Assembly of Atomically Thin Transistors and Circuits

Top-Down Integration of Molybdenum Disulfide Transistors with Wafer-Scale Uniformity and Layer Controllability.

Chemical assembly of atomically thin transistors and circuits in a large scale

A Single‐Crystal Antimony Trioxide Dielectric for 2D Field‐Effect Transistors

Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors

Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors

High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact

High Performance Few-Layer MoS2 Transistor Arrays with Wafer Level Homogeneity Integrated by Atomic Layer Deposition

Low power flexible monolayer MoS2 integrated circuits