Abstract:Well‐controlled van der Waals trilayer MoS2 is used as the semiconductor channel, which can successfully address the long‐standing issue of performance degradation from physical‐vapor deposited metal contact, leading to the demonstration of high‐speed MoS2 transistors with a high drain current (589 μA μm−1 at Vds = 1 V) as well as record‐high saturation velocity (4.2 × 106 cm s−1) at room temperature. Two‐dimensional MoS2 field‐effect transistors (FETs) have great potential for next‐generation electronics due to their excellent electronic properties with an atomic thin channel. However, multiple challenges exist for the monolayer MoS2 channel, including interface scattering and ohmic contact. In this work, well‐controlled trilayer MoS2 with high mobility and large single crystals is successfully grown on soda‐lime glass substrates using chemical vapor deposition (CVD), with a lateral size of up to 148 μm, which is the largest reported size to date. A record high on/off ratio of ≈1012 and a high carrier mobility of 62 cm2 V−1 s−1 of trilayer MoS2 FETs are demonstrated, showing notable advantages compared with the monolayer counterpart. The long‐standing issue of monolayer MoS2 performance degradation from physical vapor deposited metal contact can be mitigated by the trilayer MoS2 channel, achieving the lowest contact resistance of 350 Ω μm using the common method of e‐beam evaporated Ni. Moreover, 40‐nm channel‐length trilayer MoS2 FETs using ultrathin HfLaO dielectrics exhibit a high current of 589 μA μm−1 at a supply voltage of 1 V at room temperature, which increases to 1162 μA μm−1 at 4.3 K, the highest among those using commonly evaporated metal. Record high electron saturation velocity of 4.2 × 106 cm s−1 can be achieved at room temperature.

Sub-10 Nm Monolayer MoS2 Transistors Using Single-Walled Carbon Nanotubes As an Evaporating Mask

Short Channel Monolayer MoS2 Field-Effect Transistors Defined by SiOx Nanofins Down to 20 Nm

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates.

Scaling of MoS2 Transistors and Inverters to Sub-10 Nm Channel Length with High Performance

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors.

Scaling of MoS 2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance

Graphene-Contacted Ultrashort Channel Monolayer Mos2 Transistors

Novel 10-Nm Gate Length MoS2 Transistor Fabricated on Si Fin Substrate

Few-Layered MoS2 Field-Effect Transistors with a Vertical Channel of Sub-10 Nm.

High-performance monolayer MoS 2 nanosheet GAA transistor

A 10 nm Short Channel MoS 2 Transistor without the Resolution Requirement of Photolithography

Monolayer MoS2-based Transistors with Low Contact Resistance by Inserting Ultrathin Al2O3 Interfacial Layer

Performance Upper Limit of Sub-10 nm Monolayer MoS<sub>2</sub> Transistors with MoS<sub>2</sub>-Mo Electrodes

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Ultrashort Vertical-Channel MoS2 Transistor Using a Self-Aligned Contact

Transferred Van Der Waals Metal Electrodes for Sub-1-nm MoS 2 Vertical Transistors

Probing the Field-Effect Transistor with Monolayer MoS2 Prepared by APCVD

Monolayer Molybdenum Disulfide Transistors with Scaling Dielectric Equivalent Oxide Thickness

Performance Upper Limit of sub-10 nm Monolayer MoS2 Transistors

Van der Waals Epitaxial Trilayer MoS2 Crystals for High‐Speed Electronics

Nanoscale Channel Length MoS2 Vertical Field-Effect Transistor Arrays with Side-Wall Source/Drain Electrodes