Abstract:Electrical stability and field-effect mobility of two-dimensional (2D) material-based field-effect transistors (FETs) are extremely important for practical electronic applications. Interface scattering during the transmission of 2D materials, which can be significantly influenced by the interface between dielectric and 2D materials, remains a formidable challenge. Early work has achieved excellent mobility and on/off ratio, but the understanding and improvement of the electrical stability of MoS2 devices are still in their infancy. Herein, a facile and effective strategy is proposed via a spin-coated polymethyl methacrylate (PMMA) dual layer to enhance both field-effect mobility and electrical stability of molybdenum disulfide (MoS2) FETs, in which the PMMA underneath MoS2 works as a gate dielectric together with SiO2 and the PMMA on top of MoS2 is used to protect the FET channel from exposure to air. The field-effect electron mobility has been improved up to 2.5 times, from 41.8 to 104.6 cm(2)/Vs, by using PMMA/SiO2 as the back gate dielectric and PMMA capsulation layer. The time- and stress-dependent electrical stability has been essentially improved. A negligible threshold voltage shift (Delta Vth < 0.1 V) and field-effect mobility degradation (1.4%) are achieved upon a gate bias voltage of +/- 35 V applied for 300 s, even after 45 day storage in open air. The effective suppression of interface impurities located at the channel interface contributes to the electrical performance enhancement of MoS2 FETs. Furthermore, a theoretical model was developed to investigate different MoS2/dielectric interface structures by density functional theory (DFT), which is consistent with interface scattering theory. This study not only provides a clue for the high-performance 2D FET fabrication but also offers an opportunity to understand the electrical property degradation mechanism of the 2D material family devices, pushing forward their practical applications in the 2D devices and flexible electronics.

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains

Enhancement of Carrier Mobility in Mos2 Field Effect Transistors by A Sio2 Protective Layer

Top-gate Engineering of Field-Effect Transistors Based on Single Layers of MoS2 and Graphene

Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors

Surface functionalization toward top-gated monolayer MoS2 field-effect transistors with ZrO2/Al2O3 as composite dielectrics

Surface functionalization toward top-gated monolayer MoS<sub>2</sub> field-effect transistors with ZrO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> as composite dielectrics

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Chemical Vapor Deposited Monolayer MoS2top-gate MOSFET with Atomic-Layer-deposited ZrO2as Gate Dielectric

MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric

High-Quality CVD-MoS2 Synthesized on Surface-Modified Al2O3 for High-Performance MoS2 Field-Effect Transistors

MoS2-on-AlN Enables High-Performance MoS2 Field-Effect Transistors Through Strain Engineering.

High-Performance CVD MoS2 Transistors with Self-Aligned Top-Gate and Bi Contact

High Performance Few-Layer MoS2 Transistor Arrays with Wafer Level Homogeneity Integrated by Atomic Layer Deposition

Chemical Vapor Deposition Growth of Large-Area Monolayer MoS2 and Fabrication of Relevant Back-Gated Transistor*.

Construction of High Field-Effect Mobility Multilayer MoS2 Field-Effect Transistors with Excellent Stability Through Interface Engineering

Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition

Improved Interfacial and Electrical Properties of MoS2Transistor with High/Low-Temperature Grown Hf0.5Al0.5O As Top-Gate Dielectric

MoS 2 -on-AlN Enables High-Performance MoS 2 Field-Effect Transistors through Strain Engineering

A Comparative Study on Top-Gated and Bottom-Gated Multilayer MoS2 Transistors with Gate Stacked Dielectric of Al2O3/HfO2.

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors