UV-Ozone-Assisted Solution-Processed High- k ZrO$_\text{2}$ for MoS$_{\text{2}}$ Field-Effect Transistors
Yepeng Shi,Guoxia Liu,Xiaomin Wu,Chengjie Zhou,Chengzhi Yang,Zhenyu Yang,Fukai Shan
DOI: https://doi.org/10.1109/ted.2024.3365459
IF: 3.1
2024-01-01
IEEE Transactions on Electron Devices
Abstract:MoS $_{\text{2}}$ field-effect transistors (FETs) based on high-k gate insulators (such as ZrO $_{\text{2}}$ , HfO $_{\text{2}}$ , and Al $_{\text{2}}$ O $_{\text{3}}$ ) have been explored. However, the preparation of high-k dielectrics typically requires high-vacuum equipment, leading to high cost. In this report, high-k ZrO $_{\text{2}}$ dielectrics were prepared by a facile ultraviolet-ozone (UVO)-assisted solution process. The ZrO $_{\text{2}}$ thin films annealed at different temperatures were investigated by optical transmission spectroscopy, atomic-force microscopy, and impedance analyzer. Subsequently, MoS $_{\text{2}}$ FETs based on ZrO $_{\text{2}}$ dielectrics annealed at various temperatures were prepared and the electrical performances of the FETs were investigated. The MoS $_{\text{2}}$ FET based on ZrO $_{\text{2}}$ dielectric annealed at 300 $^{\circ}$ C demonstrates a high field-effect mobility of 89.6 cm $^{\text{2}}$ /V s, an ON-current of 10 $^{\textbf{-}\text{5}}$ A/ $\mu $ m, an ON/OFF current ratio of 10 $^{\text{8}}$ , and a subthreshold swing (SS) of 95.2 mV/dec. To explore the prospective logic applications of MoS $_{\text{2}}$ /ZrO $_{\text{2}}$ FETs, a resistor-loaded inverter was fabricated and a high gain of 32 was achieved. This work demonstrates the feasibility of solution-processed high-k dielectrics for 2-D semiconductor FETs, providing a new route to realize cost-effective and low-power 2-D semiconductor electronics and circuits.
engineering, electrical & electronic,physics, applied