Abstract:Due to the pristine interface of the 2D/3D face-tunneling heterostructure with an ultra-sharp doping profile, the 2D/3D tunneling field-effect transistor (TFET) is considered as one of the most promising low-power devices that can simultane-ously obtain low off-state current (IOFF), high on-state current (ION) and steep subthreshold swing (SS). As a key element for the 2D/3D TFET, the intensive exploration of the tunnel diode based on the 2D/3D heterostructure is in urgent need. The transfer technique composed of the exfoliation and the release process is currently the most common approach to fabri-cating the 2D/3D heterostructures. However, the well-established transfer technique of the 2D materials is still unavailable. Only a small part of the irregular films can usually be obtained by mechanical exfoliation, while the choice of the chemical exfoliation may lead to the contamination of the 2D material films by the ions in the chemical etchants. Moreover, the defor-mation of the 2D material in the transfer process due to its soft nature also leads to the nonuniformity of the transferred film, which is one of the main reasons for the presence of the wrinkles and the stacks in the transferred film. Thus, the large-scale fabrication of the high-quality 2D/3D tunnel diodes is limited. In this article, a comprehensive transfer technique that can mend up the shortages mentioned above with the aid of the water and the thermal release tape (TRT) is proposed. Based on the method we proposed, the MoS2/Si tunnel diode is experimentally demonstrated and the transferred monolayer MoS2 film with the relatively high crystal quality is confirmed by atomic force microscopy (AFM), scanning electron microscopy (SEM), and Raman characterizations. Besides, the prominent negative differential resistance (NDR) effect is observed at room temperature, which verifies the relatively high quality of the MoS2/Si heterojunction. The bilayer MoS2/Si tunnel diode is also experimentally fabricated by repeating the transfer process we proposed, followed by the specific analysis of the electrical characteristics. This study shows the advantages of the transfer technique we proposed and indicates the great application foreground of the fabricated 2D/3D heterostructure for ultralow-power tunneling devices.

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A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

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MoS2/Si Tunnel Diodes Based on Comprehensive Transfer Technique

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Charge neutral MoS2 field effect transistors through oxygen plasma treatment

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Low Contact Resistance on Monolayer MoS2 Field-Effect Transistors Achieved by CMOS-Compatible Metal Contacts

Implementing Remote Doping and Suppressed Scattering in MoS<inline-formula> &Lt;tex-Math Notation="latex">$_{\text{2}}$</tex-Math> &Lt;/inline-Formula> Field-Effect Transistor Using CMOS-Compatible Process

Contact Resistance Optimization in MoS${_2}$ Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications

High Performance MoS2 N-Channel MOSFFTs

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High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

Achieving Adsorbate-Free Monolayered MoS 2 Field Effect Transistors by Controlled Surface Gas Treatment

MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric

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