Abstract:Transition metal dichalcogenides (TMDCs) are promising high performance electronic materials due to their interesting semiconductor properties. However, it is acknowledged that the effective electrical contact between TMDCs-layered materials and metals remains one of the major challenges. In this work, the homogeneous monolayer MoS2 films with high crystalline quality were prepared by chemical vapor deposition method on SiO2/Si substrates. The back-gate field-effect transistors (FETs) were fabricated by inserting an ultrathin Al2O3 interlayer between the metal electrodes and MoS2 nanosheets. With the addition of an ultrathin 0.8 nm Al2O3 interlayer, the contact resistance decreased dramatically from 59.9 to 1.3 kΩ μm and the Schottky barrier height (SBH) dropped from 102 to 27 meV compared with devices without the Al2O3 interlayer. At the same time, the switching ratio increased from ∼106 to ∼108, and both the on-current and field-effect mobility were greatly improved. We find that the ultrathin Al2O3 interlayer can not only reduce the SBH to alleviate the Fermi level pinning phenomenon at the interface, but also protect the channel materials from the influence of air and moisture as a covering layer. In addition, the lattice and band structures of Al2O3/MoS2 film were calculated and analyzed by first-principles calculation. It is found that the total density of states of the Al2O3/MoS2 film exhibits interfacial polarized metals property, which proves the higher carrier transport characteristics. FETs with Al2O3 interlayers have excellent stability and repeatability, which can provide effective references for future low power and high performance electronic devices.

The Integration of Sub-10 Nm Gate Oxide on Mos2 with Ultra Low Leakage and Enhanced Mobility

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

Improved Integration of Ultra-Thin High-K Dielectrics in Few-Layer Mos2 Fet by Remote Forming Gas Plasma Pretreatment

Near-Ideal Subthreshold Swing Mos2 Back-Gate Transistors With An Optimized Ultrathin Hfo2 Dielectric Layer

Improved Performance of MoS2 FETs using AlN/Al2 O3 dielectric and Plasma Enhanced Atomic Layer Deposition (PEALD)

MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks

Single-crystalline metal-oxide dielectrics for top-gate 2D transistors

1-Nm-thick EOT High Mobility Ge N- and P-Mosfets with Ultrathin GeOx/Ge MOS Interfaces Fabricated by Plasma Post Oxidation

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

Sub-10 Nm Monolayer MoS2 Transistors Using Single-Walled Carbon Nanotubes As an Evaporating Mask

Monolayer MoS2-based Transistors with Low Contact Resistance by Inserting Ultrathin Al2O3 Interfacial Layer

MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric

Top-Down Integration of Molybdenum Disulfide Transistors with Wafer-Scale Uniformity and Layer Controllability.

MoS2-on-AlN Enables High-Performance MoS2 Field-Effect Transistors Through Strain Engineering.

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates.

Novel 10-Nm Gate Length MoS2 Transistor Fabricated on Si Fin Substrate

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Performance and stability improvement of CVD monolayer MoS2 transistors through HfO2 dielectrics engineering

MoS 2 -on-AlN Enables High-Performance MoS 2 Field-Effect Transistors through Strain Engineering

Performance Upper Limit of sub-10 nm Monolayer MoS2 Transistors

Suppression of surface optical phonon scattering by AlN interfacial layers for mobility enhancement in MoS2 FETs