Abstract:The integration of high-κ dielectrics on MoS2 field-effect transistors (FETs) is essential for the realization of MoS2 in ultrascaled nanoelectronic devices and circuits. Most studies covering this topic are based on exfoliated MoS2 flakes or chemical vapor deposition (CVD) grown MoS2 films, whereas other techniques, such as atomic layer deposition (ALD), are also gaining attention for the growth of MoS2 in recent years. In this work, we grow large-area MoS2 by means of plasma-enhanced (PE-)ALD and evaluate the influence of high-κ dielectrics on the properties of ALD-based MoS2 FETs through electrical characterization combined with surface-chemical and high-resolution scanning transmission electron microscopy (HR-STEM) analyses. We grow HfO x , AlO x , or both by means of PE-ALD or thermal ALD on our fabricated devices and show that, in addition to the dielectric constant, three other major parameters related to the processing of the dielectrics can simultaneously affect the MoS2 FET electrical characteristics and govern its doping. These parameters are the stoichiometry of the dielectric, its carbon impurity content, and the degree to which the MoS2 surface oxidizes upon the dielectric growth. When grown at 100 °C, our HfO x films are oxygen-vacant whereas our AlO x films are oxygen-rich. In addition, carbon impurities are incorporated into the dielectrics at low deposition temperatures, being one of the likely causes of the MoS2 FET overall n-type performance in all of the studied cases. Our investigations also reveal that PE-ALD of HfO x or AlO x oxidizes the MoS2 surface, whereas thermal ALD AlO x leaves MoS2 almost intact. In this respect, if thermal ALD AlO x of proper thickness is grown between MoS2 and HfO x , it can reduce the degree to which the MoS2 surface oxidizes by HfO x and meanwhile improve the total dielectric constant, altogether leading to the most optimal electrical performance in ALD-based MoS2 FETs.

Improved Performance of MoS2 FETs using AlN/Al2 O3 dielectric and Plasma Enhanced Atomic Layer Deposition (PEALD)

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

High Performance Few-Layer MoS2 Transistor Arrays with Wafer Level Homogeneity Integrated by Atomic Layer Deposition

Improved Integration of Ultra-Thin High-K Dielectrics in Few-Layer Mos2 Fet by Remote Forming Gas Plasma Pretreatment

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Near-Ideal Subthreshold Swing Mos2 Back-Gate Transistors With An Optimized Ultrathin Hfo2 Dielectric Layer

The Integration of Sub-10 Nm Gate Oxide on Mos2 with Ultra Low Leakage and Enhanced Mobility

MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric

Monolayer MoS2-based Transistors with Low Contact Resistance by Inserting Ultrathin Al2O3 Interfacial Layer

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

Enhancing the Performance of MoS2 Field-Effect Transistors Using Self-Assembled Monolayers: A Promising Strategy to Alleviate Dielectric Layer Scattering and Improve Device Performance

Influence of High-κ Dielectrics Integration on ALD-Based MoS2 Field-Effect Transistor Performance

MoS2-on-AlN Enables High-Performance MoS2 Field-Effect Transistors Through Strain Engineering.

Single-crystalline metal-oxide dielectrics for top-gate 2D transistors

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors.

Utilizing self-assembled-monolayer-based gate dielectrics to fabricate molybdenum disulfide field-effect transistors

Advances in atomic layer deposited high-κ inorganic materials for gate dielectrics engineering of two-dimensional MoS2 field effect transistors

MoS(2 )transistor Gated by PMMA-based Electrolyte for Sub-1 V Operation

High-Performance CVD MoS2 Transistors with Self-Aligned Top-Gate and Bi Contact

Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition

Reproducible Performance Improvements to Monolayer MoS2 Transistors through Exposed Material Forming Gas Annealing