Abstract:To extend the Moore's law in 5 nm node, a large number of two dimensional (2D) materials and devices have been researched, among which the 'cold' metals 2H MS 2 (M = Nb, Ta) with unique band structures are expected to achieve the sub-60 mVdec −1 subthreshold swing (SS). We explored the electronic properties and ballistic quantum transport performance of 'cold' metals and the corresponding MOSFETs with idealized structures. The studied 'cold' metal field-effect transistors (CM-FETs) based on the 'cold' metals are capable to fulfill the high-performance (HP) and low-dissipation (LP) goals simultaneously, as required by the International Technology Roadmap for Semiconductors (ITRS). Moreover, gaps of 'cold' metals CM-FETs also demonstrate negative differential resistance (NDR) property, allowing us to further extend the use of CM-FETs. Owing to the wide transmission path in the broken gap structure of NbS 2 /MoS 2 heterojunction, the 4110 μAμm −1 peak current, several orders of magnitude higher than the typical tunneling diode, is achieved by NbS 2 /MoS 2 CM-FET. The largest peak-valley ratio (PVR) 1.1×10 6 is obtained by TaS 2 /MoS 2 CM-FET with V GS = −1 V at room temperature. Our results claim that the superior on-state current, SS, cut-off frequency and NDR effect can be obtained by CM-FETs simultaneously. The study of CM-FETs provides a practicable solution for state-of-the-art logic device in sub 5 nm node for both more Moore roadmap and more than Moore roadmap applications.

High-Performance CVD MoS2 Transistors with Self-Aligned Top-Gate and Bi Contact

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Novel 10-Nm Gate Length MoS2 Transistor Fabricated on Si Fin Substrate

MoS2 Dual-Gate Transistors with Electrostatically Doped Contacts

MoS$_2$ Dual-gate Transistors with Electrostatically Doped Contacts

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors.

Quasi-1-Dimensional Dual-Gate MoS 2 Field-Effect Transistors with 50 nm Channel Length

Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors

Top Gate Engineering of Field-Effect Transistors Based on Wafer-Scale Two-Dimensional Semiconductors

Scaling of MoS 2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance

MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric

High Performance Few-Layer MoS2 Transistor Arrays with Wafer Level Homogeneity Integrated by Atomic Layer Deposition

Single-crystalline metal-oxide dielectrics for top-gate 2D transistors

Sub-10 Nm Monolayer MoS2 Transistors Using Single-Walled Carbon Nanotubes As an Evaporating Mask

Realizing Wafer‐Scale and Low‐Voltage Operation MoS2 Transistors Via Electrolyte Gating

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Top-Gate CVD WSe2 pFETs with Record-High I-d similar to 594 mu A/mu m, G(m)similar to 244 mu S/mu m and WSe2/MoS2 CFET based Half-adder Circuit Using Monolithic 3D Integration

Computational study of transition metal dichalcogenide cold source MOSFETs with sub-60 mV per decade and negative differential resistance effect

Approaching Ohmic Contacts for Ideal Monolayer MoS2 Transistors Through Sulfur-Vacancy Engineering

Performance Upper Limit of sub-10 nm Monolayer MoS2 Transistors