Abstract:Two-dimensional (2D) semiconductors have attracted tremendous interests as natural passivation and atomically thin channels that could facilitate continued transistor scaling. However, air-stable 2D semiconductors with high performance were quite elusive. Recently, extremely air-stable MoSi2N4 monolayer had been successfully fabricated [Hong et al., Science 369, 670 (2020)]. To further reveal its potential applications in the sub-5 nm MOSFETs, there is an urgent need to develop integrated circuits. Here we report first-principles quantum transport simulations on the performance limits of n- and p-type sub-5 nm monolayer (ML) MoSi2N4 metal-oxide-semiconductor FETs (MOSFETs). We find that the on-state current in the MoSi2N4 MOSFETs can be effectively manipulated by the length of gate and underlap (UL), as well as the doping concentration. Very strikingly, we also find that the n-type devices the optimized on-state current can reach up to 1390 and 1025 uA/um for the high performance (HP) and low power (LP) applications, respectively, both of which satisfy the International Technology Roadmap for Semiconductors (ITRS) requirements. Whereas, the optimized on-state current can meet the LP application (348 uA/um) for the p-type devices. Finally, we find that the MoSi2N4 MOSFETs have ultra-low subthreshold swing and power delay product, which have potential to realize the high speed and low power consumption devices. Our results show that MoSi2N4 is an ideal 2D channel material for future competitive ultrascaled devices.

Computational study of transition metal dichalcogenide cold source MOSFETs with sub-60 mV per decade and negative differential resistance effect

MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit

Three-Dimensional Cold Metals in Realizing Steep-Slope Transistors Based on Monolayer MoS2

Negative Capacitance 2d Mos2 Transistors With Sub-60mv/Dec Subthreshold Swing Over 6 Orders, 250 Mu A/Mu M Current Density, And Nearly-Hysteresis-Free

Sub-60 mV/decade switching with a cold metal as the injection source

Negative Capacitance 2D MoS2 Transistors with Sub-60Mv/dec Subthreshold Swing over 6 Orders, 250 Μa/μm Current Density, and Nearly-Hysteresis-free

Switching at Less Than 60 Mv/decade with a “cold” Metal As the Injection Source

Sub-5 Nm Monolayer MoS2 Transistors Toward Low-Power Devices

Van der Waals negative capacitance transistors

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

High-Performance CVD MoS2 Transistors with Self-Aligned Top-Gate and Bi Contact

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Device performance limit of in-plane monolayer VTe2/WTe2 heterojunction-based field-effect transistors

Intrinsic subthermionic capabilities and high performance of easy-to-fabricate monolayer metal dihalide MOSFETs

High-throughput Approach to Explore Cold Metals for Electronic and Thermoelectric Devices

Low-power MoS2 metal–semiconductor field effect transistors (MESFETs) based on standard metal–semiconductor contact

Steep-slope hysteresis-free negative capacitance MoS2 transistors

TMD material investigation for a low hysteresis vdW NCFET logic transistor

Investigation of negative differential resistance in metal-edge-contact MoS2 field effect transistor

Promising Properties of Sub-5 nm Monolayer MoSi2N4 Transistor

Two-Dimensional MX2 Semiconductors for Sub-5 nm Junctionless Field Effect Transistors