Abstract:Electrical stability and field-effect mobility of two-dimensional (2D) material-based field-effect transistors (FETs) are extremely important for practical electronic applications. Interface scattering during the transmission of 2D materials, which can be significantly influenced by the interface between dielectric and 2D materials, remains a formidable challenge. Early work has achieved excellent mobility and on/off ratio, but the understanding and improvement of the electrical stability of MoS2 devices are still in their infancy. Herein, a facile and effective strategy is proposed via a spin-coated polymethyl methacrylate (PMMA) dual layer to enhance both field-effect mobility and electrical stability of molybdenum disulfide (MoS2) FETs, in which the PMMA underneath MoS2 works as a gate dielectric together with SiO2 and the PMMA on top of MoS2 is used to protect the FET channel from exposure to air. The field-effect electron mobility has been improved up to 2.5 times, from 41.8 to 104.6 cm(2)/Vs, by using PMMA/SiO2 as the back gate dielectric and PMMA capsulation layer. The time- and stress-dependent electrical stability has been essentially improved. A negligible threshold voltage shift (Delta Vth < 0.1 V) and field-effect mobility degradation (1.4%) are achieved upon a gate bias voltage of +/- 35 V applied for 300 s, even after 45 day storage in open air. The effective suppression of interface impurities located at the channel interface contributes to the electrical performance enhancement of MoS2 FETs. Furthermore, a theoretical model was developed to investigate different MoS2/dielectric interface structures by density functional theory (DFT), which is consistent with interface scattering theory. This study not only provides a clue for the high-performance 2D FET fabrication but also offers an opportunity to understand the electrical property degradation mechanism of the 2D material family devices, pushing forward their practical applications in the 2D devices and flexible electronics.

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

Construction of High Field-Effect Mobility Multilayer MoS2 Field-Effect Transistors with Excellent Stability Through Interface Engineering

Low-power MoS2 metal–semiconductor field effect transistors (MESFETs) based on standard metal–semiconductor contact

Comment on "Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed"

Evolution Application of Two-Dimensional MoS2-Based Field-Effect Transistors

Sub-5 Nm Monolayer MoS2 Transistors Toward Low-Power Devices

High field-effect performance and intrinsic scattering in the two-dimensional MoS2 semiconductors

Negative Capacitance 2D MoS2 Transistors with Sub-60Mv/dec Subthreshold Swing over 6 Orders, 250 Μa/μm Current Density, and Nearly-Hysteresis-free

Modifying the Power and Performance of 2-Dimensional MoS 2 Field Effect Transistors

MoS2transistors gated by ferroelectric HfZrO2with MoS2/mica heterojunction interface

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

Negative Capacitance 2d Mos2 Transistors With Sub-60mv/Dec Subthreshold Swing Over 6 Orders, 250 Mu A/Mu M Current Density, And Nearly-Hysteresis-Free

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

Approaching Ohmic Contacts for Ideal Monolayer MoS2 Transistors Through Sulfur-Vacancy Engineering

MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit

Extremely high mobility over 5000 cm2/Vs obtained from MoS2 nanosheet transistor with NiOx Schottky gate

Steep Slope MoS2 2D Transistors: Negative Capacitance and Negative Differential Resistance

Impact of the Channel Length on Molybdenum Disulfide Field Effect Transistors with Hafnia-Based High-K Dielectric Gate

Low-power Double-Gate MoS2 Negative Capacitance Transistors with Near-Zero DIBL