Abstract:A finite Schottky barrier and large contact resistance between monolayer MoS2 and electrodes are the major bottlenecks in developing high-performance field-effect transistors (FETs) that hinder the study of intrinsic quantum behaviors such as valley-spin transport at low temperature. A gate-tunable graphene electrode platform has been developed to improve the performance of MoS2 FETs. However, intrinsic misalignment between the work function of pristine graphene and the conduction band of MoS2 results in a large threshold voltage for the FETs, because of which Ohmic contact behaviors are observed only at very high gate voltages and carrier concentrations (~1013 cm-2). Here, we present high-performance monolayer MoS2 FETs with Ohmic contact at a modest gate voltage by using a chemical-vapor-deposited (CVD) nitrogen-doped graphene with a high intrinsic electron carrier density. The CVD nitrogen-doped graphene and monolayer MoS2 hybrid FETs platform exhibited a large negative shifted threshold voltage of -54.2 V and barrier-free Ohmic contact under zero gate voltage. Transparent contact by nitrogen-doped graphene led to a 214% enhancement in the on-current and a four-fold improvement in the field-effect carrier mobility of monolayer MoS2 FETs compared with those of a pristine graphene electrode platform. The transport measurements, as well as Raman and X-ray photoelectron spectroscopy analyses before and after thermal annealing, reveal that the atomic C-N bonding in the CVD nitrogen-doped graphene is responsible for the dominant effects of electron doping. Large-scale nitrogen-doped graphene electrodes provide a promising device platform for the development of high-performance devices and the study of unique quantum behaviors.

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

Tuning On-Off Current Ratio and Field-Effect Mobility in A Mos2-Graphene Heterostructure Via Schottky Barrier Modulation

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact

MoS2/graphene Lateral Heterostructure Field Effect Transistors.

A Symmetric Tunnel Field-Effect Transistor Based on MoS2/Black Phosphorus/MoS2 Nanolayered Heterostructures

MoS2 Field-effect Transistors with Graphene/Metal Heterocontacts

Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors

Multifunctional Half-Floating-Gate Field-Effect Transistor Based on MoS 2 –BN–Graphene van der Waals Heterostructures

Sub-5 Nm Monolayer MoS2 Transistors Toward Low-Power Devices

MoS2 Negative‐Capacitance Field‐Effect Transistors with Subthreshold Swing below the Physics Limit

In-plane Schottky-barrier field-effect transistors with a 4-nm channel based on 1T/2H MoTe<sub>2</sub> and WTe<sub>2</sub>

Advances in MoS 2 -Based Field Effect Transistors (Fets)

Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface

Device simulation study of multilayer MoS 2 Schottky barrier field-effect transistors

All-2D CVD-grown semiconductor field-effect transistors with van der Waals graphene contacts

MoS2transistors gated by ferroelectric HfZrO2with MoS2/mica heterojunction interface

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates.

Low Sub-Threshold Swing Realization with Contacts of Graphene/h-Bn/mos2 Heterostructures in MoS2 Transistors

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application