Abstract:The contacts between semiconductor and metal are vital in the fabrication of nano electronic and optoelectronic devices. The contact type has a great influence on the function realization and performance of the device. In order to prepare multifunctional devices with high performance, it is necessary to modulate the barrier height and contact type at the interface. First-principles calculations based on the density functional theory (DFT) are implemented in the VASP package. The generalized gradient approximation of Perdew, Burke, and Ernzerhof (GGA-PBE) with van der Waals (vdW) correction proposed by Grimme (DFT-D3) is chosen due to its good description of long-range vdW interactions. It is demonstrated that weak vdW interactions dominate between graphene and InSe with their intrinsic electronic properties preserved. We find that the n-type ohmic contact is formed at the graphene/InSe interface with the Fermi level through the conduction band of InSe (ΦBn < 0). The Fermi level of graphene/InSe heterostructure moves down to below the Dirac point of graphene layer, which results in p-type (hole) doping in graphene. Moreover, the external electric field is effective to tune the Schottky barrier, which can control not only the Schottky barrier height but also the type of contact. With the negative external electric field varying from 0 to –1 V/nm, the conduction band minimum of InSe below the Fermi level declines gradually but the n-type ohmic contact is still preserved. Nevertheless, with the positive external electric field varying from 0 to 0.8 V/nm, the conduction band minimum of InSe shifts upward and across the Fermi level, the conduction band minimum of InSe is closer to the Fermi level than the valence band maximum, which indicates that the n-type Schottky contact is formed. The Fermi level moves from the the conduction band minimum to the valence band maximum of InSe when the positive external electric field increases from 0.8 V/nm to 2 V/nm. The n-type Schottky barrier height exceeds the p-type Schottky barrier height gradually, which demonstrates that the positive external electric field transforms the n-type Schottky contact into the p-type Schottky contact at the graphene/InSe interface. When the positive external electric field exceeds 2 V/nm, the valence band of InSe moves upward and cross the Fermi level (ΦBp < 0), the ohmic contact is obtained again. Meanwhile, p-type (hole) doping in graphene is enhanced under negative external electric field and a large positive external electric field is required to achieve n-type (electron) doping in graphene. The external electric field can control not only the amount of charge transfer but also the direction of charge transfer at the graphene/InSe interface.

Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface

Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

Tuning On-Off Current Ratio and Field-Effect Mobility in A Mos2-Graphene Heterostructure Via Schottky Barrier Modulation

Regulation and Control of Schottky Barrier in Graphene/mose2 Heteojuinction by Asymmetric Oxygen Doping

Schottky barrier modulation of a GaTe/graphene heterostructure by interlayer distance and perpendicular electric field

Influence of the density of states of graphene on the transport properties of graphene/MoS2/metal vertical field-effect transistors

A graphene/Janus B 2 P 6 heterostructure with a controllable Schottky barrier via interlayer distance and electric field

Maximizing Schottky barrier modulation in graphene-WSe 2 /MoSe 2 heterojunction barristor through Dirac-cone induced phenomenon

Effects of vertical strain and electrical field on electronic properties and Schottky contact of graphene/MoSe2 heterojunction

Controllable Schottky Barriers and Contact Types of BN Intercalation Layer in Graphene/MoSi2As4 vdW Heterostructures via Applying External Electrical Field

Tunable electronic properties and Schottky barrier in a graphene/WSe 2 heterostructure under out-of-plane strain and an electric field.

Electronic Properties and Tunable Schottky Barrier of Non-Janus MoSSe/graphene Heterostructures

Tribotronic Vertical Field‐Effect Transistor Based on van der Waals Heterostructures

Graphene/WGe2N4 van der Waals heterostructure: Controllable Schottky barrier by an electric field

Tuning Schottky Barrier in Graphene/inse Van Der Waals Heterostructures by Electric Field

Electrical characterization of multi-gated WSe2/MoS2 van der Waals heterojunctions

Multifunctional Half-Floating-Gate Field-Effect Transistor Based on MoS 2 –BN–Graphene van der Waals Heterostructures

Tunable Electrical and Optical Characteristics in Mono Layer Graphene and Few-Layer Mos2 Heterostructure Devices

Graphene/GeTe Van Der Waals Heterostructure: Functional Schottky Device with Modulated Schottky Barriers Via External Strain and Electric Field

Highly Sensitive Band Alignment of the Graphene/MoSi 2 N 4 Heterojunction via an External Electric Field