Influence of the density of states of graphene on the transport properties of graphene/MoS2/metal vertical field-effect transistors

Rai Moriya,Takehiro Yamaguchi,Yoshihisa Inoue,Yohta Sata,Sei Morikawa,Satoru Masubuchi,Tomoki Machida

DOI: https://doi.org/10.1063/1.4921920

2015-06-02

Abstract:We performed detailed studies of the current-voltage characteristics in graphene/MoS2/metal vertical field-effect transistors. Owing to its low density of states, the Fermi level in graphene is very sensitive to its carrier density and thus the external electric field. Under the application of a bias voltage VB between graphene and the metal layer in the graphene/MoS2/metal heterostructure for driving current through the van der Waals interface, the electric field across the MoS2 dielectric induces a shift in the Fermi level of graphene. When the Fermi level of graphene coincides with the Dirac point, a significant nonlinearity appears in the measured I-V curve, thus enabling us to perform spectroscopy of the Dirac point. By detecting the Dirac point for different back-gate voltages, we revealed that the capacitance of the nanometer-thick MoS2 layer can be determined from a simple DC transport measurement.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to study the influence of the density of states of graphene on the transport properties of graphene/MoS2/metal vertical field - effect transistors (V - FETs). Specifically, the author hopes to reveal the following issues through experimental and theoretical analysis:

1. **The relationship between the density of states and transport properties**: Since graphene has a low density of states, its Fermi level is very sensitive to the carrier concentration. Therefore, when a bias voltage is applied, the Fermi level will change, thus affecting the transport properties. The author hopes to further understand the behavior of graphene in vdW heterostructures by studying this relationship.

2. **Detection of the Dirac point**: The Dirac point of graphene is one of its unique physical properties. By measuring the current - voltage (I - V) curve, the author observes that when the Fermi level coincides with the Dirac point, the I - V curve shows significant nonlinearity. This enables them to detect the position of the Dirac point through simple two - terminal conductance measurements.

3. **Determination of the dielectric constant of the MoS2 layer**: By changing the back - gate voltage (VG) and the source - drain voltage (VB), the author finds that the turning point of the I - V curve can be used to determine the geometric capacitance ratio of the MoS2 layer (CMoS2/CSiO2). Furthermore, through experiments on MoS2 layers of different thicknesses, the dielectric constant of MoS2 (εMoS2) is deduced.

4. **Application potential of vdW heterostructures**: The author's research is not limited to basic physical properties, but also explores the application potential of these properties in nano - electronic devices. In particular, they show how to use the low - density - of - states property of graphene to design and optimize new electronic devices.

In summary, this paper aims to reveal the influence of the density of states of graphene on its performance and explore its application prospects in nanoelectronics by studying in detail the transport properties of graphene/MoS2/metal vertical field - effect transistors.