Abstract:We demonstrate a graphene-MoS2 architecture integrating multiple field-effect transistors and we independently probe and correlate the conducting properties of van der Waals coupled graphene-MoS2 contacts with the ones of the MoS2 channels. Devices are fabricated starting from high-quality single-crystal monolayers grown by chemical vapor deposition and characterized by scanning Raman and photoluminescence spectroscopies. Transconductance curves of MoS2 are compared with the current-voltage characteristics of graphene contact stripes, revealing a significant suppression of transport on the n-side of the transconductance curve. Based on ab-initio modeling, the effect is understood in terms of trapping by sulfur vacancies, which counter-intuitively depends on the field-effect, even though the graphene contact layer is positioned between the backgate and the MoS2 channel.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the phenomenon of electron transport suppression observed in the graphene - MoS₂ heterojunction multi - field - effect transistor (FET) architecture. Specifically, the authors constructed a graphene - MoS₂ architecture containing multiple FETs and independently probed the conductive properties of the van der Waals - coupled graphene - MoS₂ contact points and the MoS₂ channel. It was found that a significant transport suppression phenomenon occurred on one side of the n - type transport curve. Based on first - principles modeling, this effect was interpreted as a result of sulfur vacancy trapping, and this trapping is field - effect - dependent, even though the graphene contact layer is located between the back - gate and the MoS₂ channel. ### Main research questions 1. **Mechanism of electron transport suppression phenomenon**: Why does electron transport suppression occur in the graphene - MoS₂ heterojunction? How does this suppression depend on the field effect? 2. **Role of sulfur vacancies**: How do sulfur vacancies affect electron transport between graphene and MoS₂? Can this effect be verified by experimental and theoretical models? 3. **Influence of the field effect**: What are the specific effects of sulfur vacancies on electron transport under different field - effect conditions? ### Research methods 1. **Material preparation**: - High - quality single - crystal graphene and MoS₂ monolayers were prepared using chemical vapor deposition (CVD) technology. - Through patterning and transfer processes, graphene stripes and MoS₂ monolayers were integrated into a multi - FET structure. 2. **Characterization techniques**: - Raman spectroscopy and photoluminescence (PL) spectroscopy were used to characterize the properties of 2D materials. - Electron transport behavior under different field - effect conditions was analyzed through transport property measurements. 3. **Theoretical simulation**: - Density functional theory (DFT) calculations were used to simulate the effect of sulfur vacancies on the electronic states of the graphene - MoS₂ heterojunction. - Charge distributions under different field - effect voltages were calculated to verify the experimental results. ### Key findings 1. **Transport suppression phenomenon**: A significant transport suppression was observed on one side of the n - type transport curve, which is consistent with the turn - on threshold of the MoS₂ channel. 2. **Role of sulfur vacancies**: Sulfur vacancies, as charge traps, capture electrons only under positive gate voltages, resulting in the suppression of n - type transport. 3. **Influence of the field effect**: The presence of sulfur vacancies enables MoS₂ to affect the field - effect conduction of the back - gate graphene, even though MoS₂ is located above the graphene. ### Conclusion This study, through experimental and theoretical models, has revealed the important role of sulfur vacancies in the graphene - MoS₂ heterojunction and explained the mechanism of the electron transport suppression phenomenon. These findings not only enhance the understanding of 2D material heterojunctions but also provide new ideas for the development of high - performance optoelectronic devices based on van der Waals heterojunctions.

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