Abstract:A finite Schottky barrier and large contact resistance between monolayer MoS2 and electrodes are the major bottlenecks in developing high-performance field-effect transistors (FETs) that hinder the study of intrinsic quantum behaviors such as valley-spin transport at low temperature. A gate-tunable graphene electrode platform has been developed to improve the performance of MoS2 FETs. However, intrinsic misalignment between the work function of pristine graphene and the conduction band of MoS2 results in a large threshold voltage for the FETs, because of which Ohmic contact behaviors are observed only at very high gate voltages and carrier concentrations (~1013 cm-2). Here, we present high-performance monolayer MoS2 FETs with Ohmic contact at a modest gate voltage by using a chemical-vapor-deposited (CVD) nitrogen-doped graphene with a high intrinsic electron carrier density. The CVD nitrogen-doped graphene and monolayer MoS2 hybrid FETs platform exhibited a large negative shifted threshold voltage of -54.2 V and barrier-free Ohmic contact under zero gate voltage. Transparent contact by nitrogen-doped graphene led to a 214% enhancement in the on-current and a four-fold improvement in the field-effect carrier mobility of monolayer MoS2 FETs compared with those of a pristine graphene electrode platform. The transport measurements, as well as Raman and X-ray photoelectron spectroscopy analyses before and after thermal annealing, reveal that the atomic C-N bonding in the CVD nitrogen-doped graphene is responsible for the dominant effects of electron doping. Large-scale nitrogen-doped graphene electrodes provide a promising device platform for the development of high-performance devices and the study of unique quantum behaviors.

MoS2/graphene Lateral Heterostructure Field Effect Transistors.

CVD Graphene Contacts for Lateral Heterostructure MoS_2 Field Effect Transistors

CVD Graphene Contacts for Lateral Heterostructure MoS${_2}$ Field Effect Transistors

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

MoS2 Field-effect Transistors with Graphene/Metal Heterocontacts

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

Low Sub-Threshold Swing Realization with Contacts of Graphene/h-Bn/mos2 Heterostructures in MoS2 Transistors

Strain-Gated Field Effect Transistor of a MoS2-ZnO 2D-1D Hybrid-Structure.

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates.

MoS2-on-AlN Enables High-Performance MoS2 Field-Effect Transistors Through Strain Engineering.

MoS2 Dual-Gate Transistors with Electrostatically Doped Contacts

Towards Barrier Free Contact to MoS2 Using Graphene Electrodes

Unexpected Electron Transport Suppression in a Heterostructures Graphene MoS2 Multiple Field-Effect Transistor Architecture

MoS$_2$ Dual-gate Transistors with Electrostatically Doped Contacts

Gate-tunable Linear Magnetoresistance in Molybdenum Disulfide Field-Effect Transistors with Graphene Insertion Layer

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

All-2D CVD-grown semiconductor field-effect transistors with van der Waals graphene contacts

Probing the Field-Effect Transistor with Monolayer MoS2 Prepared by APCVD

Molecular Approach to Electrochemically Switchable Monolayer MoS2 Transistors