Abstract:Electrostatically defined nanoscale devices within 2D semiconductor heterostructures, especially van der Waals heterostructures, offer advantages such as uniformity and flexibility. Investigating MoS2/WSe2 heterostructures under split gate and middle gate control unveils unique electronic behavior, highlighting quantum confinement and precise electrostatic control, and advancing the understanding of 2D materials for future electronic devices. The exponential development in quantum phenomena is directly correlated with the decreasing size of nano‐semiconductor transistors. Consequently, the use of a quantum structure that deviates from traditional transistor types becomes imperative. Electrostatically defined nanoscale devices within 2D semiconductor heterostructures serve as foundational elements for diverse quantum electrical circuits. Van der Waals heterostructures, distinguished by atomically flat interfaces and inherent 2D characteristics, offer advantages such as large‐scale uniformity, flexibility, and portability over conventional bulk semiconductor heterostructures. Herein, the intricate electronic behavior of a MoS2/WSe2 encapsulated heterostructure governed by split‐gate and middle‐gate configurations is investigated, revealing a distinctive step‐like current profile at a low temperature of 77 K. The observed four regimes in the current highlight the impact of quantum confinement induced by reduced lateral dimensions, coupled with precise electrostatic confinement controlled by gate voltages. The temperature dependence of the phenomena emphasizes the role of thermal effects on carrier scattering mechanisms. In addition, the pinch‐off characteristics with different temperatures, middle‐gate voltages, and drain biases are explored. This study contributes to a deeper understanding of electrostatic effects in 2D transition metal dichalcogenide heterostructures and holds promise for the development of advanced electronic devices with tailored confinement for enhanced functionalities.

Charge Transport and Quantum Confinement in MoS2dual-gated Transistors

MoS$_2$ Dual-gate Transistors with Electrostatically Doped Contacts

MoS2 Dual-Gate Transistors with Electrostatically Doped Contacts

Exploring Electrostatic Confinement Transport in MoS2/WSe2 Heterostructure via Triple‐Gated Point Contact Device

Band filling and cross quantum capacitance in ion gated semiconducting transition metal dichalcogenide monolayers

A field-effect approach to directly profiling the localized states in monolayer MoS 2 .

Charge Trapping At The Mos2-Sio2 Interface And Its Effects On The Characteristics Of Mos2 Metal-Oxide-Semiconductor Field Effect Transistors

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

Quantum-mechanical effect in atomically thin MoS2 FET

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors

Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy

Uncovering Edge States and Electrical Inhomogeneity in MoS2 Field-Effect Transistors

Strain-Gated Field Effect Transistor of a MoS2-ZnO 2D-1D Hybrid-Structure.

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform

Gated Tuned Superconductivity and Phonon Softening in Mono- and Bilayer MoS$_2$

A Theoretical Investigation of Orientation-Dependent Transport in Monolayer MoS 2 Transistors at the Ballistic Limit

Gate Stack Engineering in MoS<sub>2</sub>Field-Effect Transistor for Reduced Channel Doping and Hysteresis Effect

Quasi-1-Dimensional Dual-Gate MoS 2 Field-Effect Transistors with 50 nm Channel Length

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions