Abstract:Electrostatically defined nanoscale devices within 2D semiconductor heterostructures, especially van der Waals heterostructures, offer advantages such as uniformity and flexibility. Investigating MoS2/WSe2 heterostructures under split gate and middle gate control unveils unique electronic behavior, highlighting quantum confinement and precise electrostatic control, and advancing the understanding of 2D materials for future electronic devices. The exponential development in quantum phenomena is directly correlated with the decreasing size of nano‐semiconductor transistors. Consequently, the use of a quantum structure that deviates from traditional transistor types becomes imperative. Electrostatically defined nanoscale devices within 2D semiconductor heterostructures serve as foundational elements for diverse quantum electrical circuits. Van der Waals heterostructures, distinguished by atomically flat interfaces and inherent 2D characteristics, offer advantages such as large‐scale uniformity, flexibility, and portability over conventional bulk semiconductor heterostructures. Herein, the intricate electronic behavior of a MoS2/WSe2 encapsulated heterostructure governed by split‐gate and middle‐gate configurations is investigated, revealing a distinctive step‐like current profile at a low temperature of 77 K. The observed four regimes in the current highlight the impact of quantum confinement induced by reduced lateral dimensions, coupled with precise electrostatic confinement controlled by gate voltages. The temperature dependence of the phenomena emphasizes the role of thermal effects on carrier scattering mechanisms. In addition, the pinch‐off characteristics with different temperatures, middle‐gate voltages, and drain biases are explored. This study contributes to a deeper understanding of electrostatic effects in 2D transition metal dichalcogenide heterostructures and holds promise for the development of advanced electronic devices with tailored confinement for enhanced functionalities.

Gate-Induced Trans-Dimensionality of Carrier Distribution in Bilayer Lateral Heterosheet of MoS 2 and WS 2 for Semiconductor Devices with Tunable Functionality

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Gate-Tunable Junctions within Monolayer MoS 2 –WS 2 Lateral Heterostructures

Visualization of Local Conductance in MoS2/WSe2 Heterostructure Transistors

Electrical characterization of multi-gated WSe2/MoS2 van der Waals heterojunctions

A New Device Architecture Based on Two Dimensional Van Der Waals Heterostructures

Electric Field Modulation of the Band Structure in MoS2/WS2 Van Der Waals Heterostructure

Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy

Gate-Tunable Semiconductor Heterojunctions from 2D/3D van der Waals Interfaces

Enhancing the Carrier Transport in Monolayer MoS2 Through Interlayer Coupling with 2D Covalent Organic Frameworks

Visualizing Band Offsets and Edge States in Bilayer-Monolayer Transition Metal Dichalcogenides Lateral Heterojunction

A dielectric-defined lateral heterojunction in a monolayer semiconductor

Visualizing Band Profiles of Gate-Tunable Junctions in MoS2/WSe2 Heterostructure Transistors.

Tuning Electronic Structure of Bilayer MoS2 by Vertical Electric Field: A First-Principles Investigation

Exploring Electrostatic Confinement Transport in MoS2/WSe2 Heterostructure via Triple‐Gated Point Contact Device

Engineering bandgaps of monolayer MoS2 and WS2 on fluoropolymer substrates by electrostatically tuned many-body effects

Tuning Electrical Conductance in Bilayer MoS2 Through Defect-Mediated Interlayer Chemical Bonding

Charge Transport in Mos2/Wse2 Van Der Waals Heterostructure with Tunable Inversion Layer

Enhancement of Carrier Mobility in Semiconductor Nanostructures by Carrier Distribution Engineering

Controllable Photocurrent Generation in Lateral Bilayer MoS2-WS2 Heterostructure