Abstract:Interlayer interaction could substantially affect the electrical transport in transition metal dichalcogenides, serving as an effective way to control the device performance. However, it is still challenging to utilize interlayer interaction in weakly interlayer-coupled materials such as pristine MoS2 to realize layer-dependent tunable transport behavior. Here, we demonstrate that, by substitutional doping of vanadium atoms in the Mo sites of the MoS2 lattice, the vanadium-doped monolayer MoS2 device exhibits an ambipolar field effect characteristic, while its bilayer device demonstrates a heavy p-type field effect feature, in sharp contrast to the pristine monolayer and bilayer MoS2 devices, both of which show similar n-type electrical transport behaviors. Moreover, the electrical conductance of the doped bilayer MoS2 device is drastically enhanced with respect to that of the doped monolayer MoS2 device. Employing first-principle calculations, we reveal that such striking behaviors arise from the presence of electrical transport networks associated with the enhanced interlayer hybridization of S-3pz orbitals between adjacent layers activated by vanadium dopants in the bilayer MoS2, which is nevertheless absent in its monolayer counterpart. Our work highlights that the effect of dopant not only is confined in the in-plane electrical transport behavior but also could be used to activate out-of-plane interaction between adjacent layers in tailoring the electrical transport of the bilayer transitional metal dichalcogenides, which may bring different applications in electronic and optoelectronic devices.

Tuning Electronic Structure of Bilayer MoS2 by Vertical Electric Field: A First-Principles Investigation

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Tuning Band Gaps in Twisted Bilayer MoS_2

Tuning Flat Bands by Interlayer Interaction, Spin-Orbital Coupling, and External Fields in Twisted Homotrilayer MoS_2

PHYSICAL REVIEW B 102, 235418 (2020) Tuning band gaps in twisted bilayer MoS2

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Electric Field Modulation of the Band Structure in MoS2/WS2 Van Der Waals Heterostructure

Force and light tuning vertical tunneling current in the atomic layered MoS2.

Electronic Properties of Mos2 Sandwiched Between Graphene Monolayers

Strain and electric field tuning the electronic properties of two-dimensional MoS2/ScCl3 van der Waals heterostructure

Gate-Induced Trans-Dimensionality of Carrier Distribution in Bilayer Lateral Heterosheet of MoS 2 and WS 2 for Semiconductor Devices with Tunable Functionality

Electric Field Effects on the Electronic Structures of MoS2/antimonene Van Der Waals Heterostructure

Electrical Tuning of Valley Magnetic Moment Through Symmetry Control in Bilayer MoS2

Ab Initio Study of Tunable Band Gap of Monolayer and Bilayer Phosphorene by the Vertical Electronic Field

Gate-Tunable Junctions within Monolayer MoS 2 –WS 2 Lateral Heterostructures

Tuning flat bands by interlayer interaction, spin-orbital coupling, and external fields in twisted homotrilayer MoS$_2$

Tuning Electrical Conductance in Bilayer MoS2 Through Defect-Mediated Interlayer Chemical Bonding

Tunable bandgap of monolayer black phosphorus by using vertical electric field: A DFT study

Strain and electric field induced electronic properties of two-dimensional hybrid bilayers of transition-metal dichalcogenides

Band Evolution Of Two-Dimensional Transition Metal Dichalcogenides Under Electric Fields

Strain Engineering and Electric Field Tunable Electronic Properties of Janus MoSSe/WX2 (X = S, Se) van der Waals Heterostructures