Abstract:Tuning band gaps in two-dimensional (2D) materials is of great interest for the fundamental and practical aspects of contemporary material sciences. Recently, black phosphorus (BP) consisting of stacked layers of phosphorene was experimentally observed to show a widely tunable band gap by means of the deposition of potassium (K) atoms on the surface, thereby allowing great flexibility in the design and optimization of electronic and optoelectronic devices. Here, based on density-functional theory calculations, we demonstrates that the donated electrons from K dopants are mostly localized in the topmost BP layer and this surface charging efficiently screens the K ion potential. It is found that, as the K doping increases, the extreme surface charging and its screening of K atoms shift the conduction bands down in energy, i.e., towards a higher binding energy, because they have more charge near the surface, while it has little influence on the valence bands having more charge in the deeper layers. This result provides a different explanation for the observed tunable band gap compared to the previously proposed giant Stark effect where a vertical electric field from the positively ionized K overlayer to the negatively charged BP layers shifts the conduction band minimum Γ1c (valence band minimum Γ8v) downwards (upwards). The present prediction of Γ1c and Γ8v as a function of the K doping reproduces well the widely tunable band gap, anisotropic Dirac semimetal state, and band-inverted semimetal state, as observed in an angle-resolved photoemission spectroscopy experiment. Our findings shed new light on a route for tunable band gap engineering of 2D materials through the surface doping of alkali metals.

Tunable bandgap of monolayer black phosphorus by using vertical electric field: A DFT study

Ab Initio Study of Tunable Band Gap of Monolayer and Bilayer Phosphorene by the Vertical Electronic Field

The Phosphorene Under The External Electronic Field And Strain

Tunable bandgap in few-layer black phosphorus by electrical field

Efficient Electrical Control of Thin-Film Black Phosphorus Bandgap

Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Strain-modulated Bandgap and Piezo-resistive Effect in Black Phosphorus Field-effect Transistors

Observation of tunable bandgap and anisotropic Dirac semimetal state in black phosphorus

A First-Principles Study of the Electrically Tunable Band Gap in Few-Layer Penta-Graphene

Tuning Band Gaps in Twisted Bilayer MoS_2

Observation of tunable band gap and anisotropic Dirac semimetal state in black phosphorus

Strain-tunable Lattice and Energy Gap in Bulk Black Phosphorus

Tunable electronic and magneto-optical properties of monolayer arsenene: From GW0 approximation to large-scale tight-binding propagation simulations

Tuning Electronic Structure of Bilayer MoS2 by Vertical Electric Field: A First-Principles Investigation

Microscopic mechanism of the tunable band gap in potassium-doped few-layer black phosphorus

Tunable moiré bandgap in hBN-aligned bilayer graphene device with in-situ electrostatic gating

Bandgap Modulation in BP Field Effect Transistor and Its Applications

Electric field induced gap modification in ultrathin blue phosphorous

Engineering of the electronic structure of Fe-adsorbed black phosphorus monolayer by strain

Effect of Multilayer Structure, Stacking Order and External Electric Field on the Electrical Properties of Few-Layer Boron-Phosphide.