Abstract:Although monolayer black phosphorus (BP), or phosphorene, has been successfully exfoliated and its optical properties have been explored, most of the electrical performance of the devices is demonstrated on few-layer phosphorene and ultrathin BP films. In this paper, we study the channel length scaling of ultrathin BP field-effect transistors (FETs) and discuss a scheme for using various contact metals to change the transistor characteristics. Through studying transistor behaviors with various channel lengths, the contact resistance can be extracted with the transfer length method (TLM). With different contact metals, we find out that the metal/BP interface has different Schottky barrier heights, leading to a significant difference in contact resistance, which is quite different from previous studies of transition metal dichalcogenides (TMDs), such as MoS2, where the Fermi level is strongly pinned near the conduction band edge at the metal/MoS2 interface. The nature of BP transistors is Schottky barrier FETs, where the on and off states are controlled by tuning the Schottky barriers at the two contacts. We also observe the ambipolar characteristics of BP transistors with enhanced n-type drain current and demonstrate that the p-type carriers can be easily shifted to n-type or vice versa by controlling the gate bias and drain bias, showing the potential to realize BP CMOS logic circuits.

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Strain-modulated Bandgap and Piezo-resistive Effect in Black Phosphorus Field-effect Transistors

Black Phosphorus Radio-Frequency Transistors

Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling

High field transport of high performance black phosphorus transistors

Field Effect Optoelectronic Modulation of Quantum-Confined Carriers in Black Phosphorus

Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling

Efficient Electrical Control of Thin-Film Black Phosphorus Bandgap

Piezoelectric substrate-induced strain engineering on tuning polarized Raman spectra of crystalline black phosphorus

Mechanisms of Current Fluctuation in Ambipolar Black Phosphorus Field-Effect Transistors

Electric field effect in ultrathin black phosphorus

Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering

Remarkable Anisotropic Phonon Response in Uniaxially Strained Few-Layer Black Phosphorus

Bandgap Modulation in BP Field Effect Transistor and Its Applications

Electrical characterization of fully encapsulated ultra thin black phosphorus-based heterostructures with graphene contacts

Gate tunable quantum oscillations in air-stable and high mobility few-layer phosphorene heterostructures

Dual gate black phosphorus velocity modulated transistor

High-mobility transport symmetry and effect of strain on electronic and optical properties in few-layer blue phosphorus

Environmental, thermal, and electrical susceptibility of black phosphorus field effect transistors

High-speed Black Phosphorus Field-Effect Transistors Approaching Ballistic Limit

Engineering of the electronic structure of Fe-adsorbed black phosphorus monolayer by strain