Abstract:Black phosphorus has attracted broad interest because of their low-dimensional effect, and has become a new kind of two-dimensional (2D) materials. Phosphorus has several allotropes. Black phosphorus is the most thermodynamic stable in them. As a kind of two-dimensional materials, black phosphorus has high carrier mobility and on/off ratio. The band gap of black phosphorus can be adjusted by its number of layers from 0.3 to 2 eV. It is of great significance to the development of new infrared and near-infrared optoelectronic devices. Currently, the main methods for preparing black phosphorus are chemical vapor transfer and high energy ball milling methods. In this paper, black phosphorus was successfully synthesized from red phosphorus via chemical vapor transfer and high energy ball milling methods. Then black phosphorus was put in ethanol for 10 min to liquid exfoliation, in which the ultrasonic power was 400 W. The microstructures and stability of black phosphorus synthesized by two methods were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and differential scanning calorimeter (DSC). In situ electrical measurements of black phosphorus prepared by chemical vapor transfer were performed using a commercial scanning tunnelling microscope-transmission electron microscope probing system (STM-TEM, Nanofactory Instruments) inserted into a JEOL-2010F TEM. The microstructural characterization results show that there is some red phosphorus and amorphous phases in black phosphorus prepared by high energy ball milling method. On the contrary, the black phosphorus prepared by chemical vapor transfer method has no amorphous phases. The XRD results show that black phosphorus synthesized by chemical vapor transfer method did not change significantly after keeping in the air for 16 days. The DSC results show that the volatile points of the black phosphorus prepared by high energy ball milling and chemical vapor transfer methods are respectively 394.5 and 432.2 degrees C, which means the latter has better thermal stability. The TEM results show that a layer or two layers of phosphorene via liquid exfoliation had been obtained, which is large in size and clean in surface. After being irradiated in TEM with a dose of 0.8 eV/(angstrom(2).s) at 200 kV for 60 min, few new diffraction spots appeared in black phosphorus synthesized by chemical vapor transfer method, which indicates it is relatively stable under electron radiation in vacuum. In a word, the black phosphorus prepared by chemical vapor transfer method has large size, good crystallinity, high purity, and high stability. It can be used to prepare two-dimensional black phosphorus by mechanical exfoliation and liquid exfoliation, and then be applied to advanced microelectronic devices.

Environmental, thermal, and electrical susceptibility of black phosphorus field effect transistors

Performance Change of Few Layer Black Phosphorus Transistors in Ambient

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering

High-Performance Black Phosphorus Field-Effect Transistors with Long-Term Air Stability.

Black phosphorus field effect transistors stable in harsh conditions via surface engineering

Preparation and Characterization of Black Phosphorus

Environmental instability of few-layer black phosphorus

Towards High-Performance Two-Dimensional Black Phosphorus Optoelectronic Devices: the Role of Metal Contacts

In Situ Thermal Decomposition of Exfoliated Two-Dimensional Black Phosphorus

Electrical characterization of fully encapsulated ultra thin black phosphorus-based heterostructures with graphene contacts

Electric field effect in ultrathin black phosphorus

Probing The Electronic States And Impurity Effects In Black Phosphorus Vertical Heterostructures

Structure, Preparation and Properties of Phosphorene

Strongly Modulated Ambipolar Characteristics of Few-layer Black Phosphorus in Oxygen

Strain-modulated Bandgap and Piezo-resistive Effect in Black Phosphorus Field-effect Transistors

Resolving and Tuning Mechanical Anisotropy in Black Phosphorus via Nanomechanical Multimode Resonance Spectromicroscopy

Anomalous Temperature Dependence in Metal-Black Phosphorus Contact.

High field transport of high performance black phosphorus transistors

Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation

Black Phosphorus Radio Frequency Electronics at Cryogenic Temperatures