Abstract:Two-dimensional layered materials (2DLMs) are of considerable interest for high-performance electronic devices for their unique electronic properties and atomically thin geometry. However, the atomically thin geometry makes their electronic properties highly susceptible to the environment changes. In particular, some 2DLMs (e.g., black phosphorus (BP) and SnSe2) are unstable and could rapidly degrade over time when exposed to ambient conditions. Therefore, the development of proper passivation schemes that can preserve the intrinsic properties and enhance their lifetime represents a key challenge for these atomically thin electronic materials. Herein we introduce a simple, nondisruptive, and scalable van der Waals passivation approach by using organic thin films to simultaneously improve the performance and air stability of BP field-effect transistors (FETs). We show that dioctylbenzothienobenzothiophene (C8-BTBT) thin films can be readily deposited on BP via van der Waals epitaxy approach to protect BP against oxidation in ambient conditions over 20 d. Importantly, the noncovalent van der Waals interface between C8-BTBT and BP effectively preserves the intrinsic properties of BP, allowing us to demonstrate high-performance BP FETs with a record-high current density of 920 μA/um, hole drift velocity over 1 × 107 cm/s, and on/off ratio of 1 × 104 to ∼1 × 107 at room temperature. This approach is generally applicable to other unstable two-dimensional materials, defining a unique pathway to modulate their electronic properties and realize high-performance devices through hybrid heterojunctions.

Performance Change of Few Layer Black Phosphorus Transistors in Ambient

Environmental instability of few-layer black phosphorus

Enhanced Stability of Black Phosphorus Field-Effect Transistors with Sio2 Passivation

Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering

Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation

Effective Passivation of Black Phosphorus Transistor Against Ambient Degradation by an Ultra-Thin Tin Oxide Film.

High-Performance Black Phosphorus Field-Effect Transistors with Long-Term Air Stability.

Black Phosphorus Radio-Frequency Transistors

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Electronic Structures of Air-Exposed Few-Layer Black Phosphorus by Optical Spectroscopy

Black phosphorus field effect transistors stable in harsh conditions via surface engineering

Environmental, thermal, and electrical susceptibility of black phosphorus field effect transistors

Enhanced Stability of Black Phosphorus Field‐Effect Transistors Via Hydrogen Treatment

Mechanisms of Current Fluctuation in Ambipolar Black Phosphorus Field-Effect Transistors

Performance Improvement in Hydrogenated Few-Layer Black Phosphorus Field-Effect Transistors

Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling

Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling

Device Performance Simulations of Multilayer Black Phosphorus Tunneling Transistors

Strongly Modulated Ambipolar Characteristics of Few-layer Black Phosphorus in Oxygen

Wet Chemical Method for Black Phosphorus Thinning and Passivation.

Surface Chemistry of Black Phosphorus under a Controlled Oxidative Environment