Abstract:One‐step scalable production of high‐quality and ultra‐stable Au/FL‐BP single crystals with the strong local charge transfer. Au/FL‐BP crystals as well as related back‐gated field effect transistors show long‐term stability under harsh environments, including i) high humidity of 95%, ii) strong organic agent of alcohol and acetone for >45 days, and iii) high temperature at 573 K for >9 h. Few‐layer black phosphorus (FL‐BP) is a promising high‐mobility semiconductor with thickness‐dependent direct bandgap varying from visible to mid‐infrared region. The poor stability under harsh environment, stemming from irreversible oxidization of P atoms with lone pair electrons, restricts its practical applications. Herein, an electrochemical intercalation and in situ electrochemical deposition (EI&ED) approach to produce scalable Au nanoparticles/FL‐BP crystals with enhanced stability in harsh environment is developed. In this approach, the chemical reactivity of BP is significantly suppressed via the efficient local charge transfer from FL‐BP to electrochemically deposited Au nanoparticles. Thus obtained Au/FL‐BP based nano‐devices show good stability under harsh environment, including i) high humidity of 95%, ii) immersibility in organic agents for as long as 45 days, and iii) annealing at 573 K for 9 h. In addition, compared to bare FL‐BP crystals, Au/FL‐BP based photodetectors present 50‐ and 36‐fold improvement of photoresponsivity at 1550 and 1850 nm via the surface plasmonic enhancement effect. This EI&ED method can produce ultra‐stable FL‐BP crystals at large‐scale, which resolves the crucial barriers in using FL‐BP in large‐scale electronic and optoelectronic devices.

Enhanced Stability of Black Phosphorus Field-Effect Transistors with Sio2 Passivation

Performance Change of Few Layer Black Phosphorus Transistors in Ambient

Enhanced Stability of Black Phosphorus Field‐Effect Transistors Via Hydrogen Treatment

High-Performance Black Phosphorus Field-Effect Transistors with Long-Term Air Stability.

Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation

HfO2-passivated Black Phosphorus Field Effect Transistor with Long-Termed Stability and Enhanced Current On/off Ratio

Black phosphorus field effect transistors stable in harsh conditions via surface engineering

Developments in stability and passivation strategies for black phosphorus

Metal‐Ion‐Modified Black Phosphorus with Enhanced Stability and Transistor Performance

Effective Passivation of Black Phosphorus Transistor Against Ambient Degradation by an Ultra-Thin Tin Oxide Film.

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Temperature-Stable Black Phosphorus Field-Effect Transistors Through Effective Phonon Scattering Suppression On Atomic Layer Deposited Aluminum Nitride

Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering

Modification Strategies and Prospects for Enhancing the Stability of Black Phosphorus

Wet Chemical Method for Black Phosphorus Thinning and Passivation.

Solution-Based Property Tuning of Black Phosphorus

Surface Charge Transfer Doping and Effective Passivation of Black Phosphorus Field Effect Transistors

Environmental instability of few-layer black phosphorus

Effects of Al2O3 Capping and Post-Annealing on the Conduction Behavior in Few-Layer Black Phosphorus Field-Effect Transistors

Black Phosphorus Field-Effect Transistors with Improved Contact via Localized Joule Heating

Improving Harsh Environmental Stability of Few‐Layer Black Phosphorus by Local Charge Transfer