Effective Passivation of Black Phosphorus Transistor Against Ambient Degradation by an Ultra-Thin Tin Oxide Film.

Dianzhong Wu,Zhijian Peng,Chuanhong Jin,Zhiyong Zhang

DOI: https://doi.org/10.1016/j.scib.2019.04.021

IF: 18.9

2019-01-01

Science Bulletin

What problem does this paper attempt to address?

Black phosphorus field effect transistors stable in harsh conditions via surface engineering

Bei Jiang,Hao Huang,Rui Chen,Guoli Li,Denis Flandre,Da Wan,Xue Chen,Xingqiang Liu,Cong Ye,Lei Liao

DOI: https://doi.org/10.1063/5.0021335

IF: 4

2020-09-14

Applied Physics Letters

Abstract:Black phosphorus (BP) has potential for fabricating p-type transistors in ultra-thin 2D-material complementary circuits. However, as the synergetic effect of water and oxygen leads to performance degradation under an ambient atmosphere, it is urgent to develop a passivation strategy for robust stability. Herein, a scalable superhydrophobic passivation layer is designed to improve the stability of BP transistors, which consists of fluoroalkylsilane-coated titanium dioxide (TiO<sub>2</sub>) nanoparticles. Due to the superhydrophobic property of the passivation layer, the BP transistors preserve intrinsic performance in extremely wet conditions, including humid air, water, HCl, and KOH. After 28 days in atmospheric conditions, the performance presents only 20% channel current degradation and the device can work even after 60 days. This work not only experimentally demonstrates robust stable BP transistors in harsh conditions but also provides a highly efficient and damage-free strategy to suppress the influence of water adsorption in atmospheric conditions for highly stable 2D materials devices.

physics, applied
Performance Change of Few Layer Black Phosphorus Transistors in Ambient

Xiaomeng Ma,Wanglin Lu,Bingyan Chen,Donglai Zhong,Le Huang,Lijun Dong,Chuanhong Jin,Zhiyong Zhang

DOI: https://doi.org/10.1063/1.4933124

IF: 1.697

2015-01-01

AIP Advances

Abstract:Transistors were fabricated based on mechanical exfoliated few layer black phosphorus (BP) flakes, and performance change of these devices exposed to air was explored systematically. BP devices were found to suffer severe performance degradation in ambient conditions, and the field effect mobility drops to less than 1/10 of the original in no more than 120 hours after fabrication. However the current on/off ratio shows completely different time dependent behavior to the published result, i.e. increases with exposure time in air, since the minimum current decreases with exposure time to air, which is probably originated from the decrease of layer number in BP. A model is developed to estimate the bandgap change of BP according to the time dependent minimum current of the BP device.
Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation

Joshua D. Wood,Spencer A. Wells,Deep Jariwala,Kan-Sheng Chen,EunKyung Cho,Vinod K. Sangwan,Xiaolong Liu,Lincoln J. Lauhon,Tobin J. Marks,Mark C. Hersam

DOI: https://doi.org/10.1021/nl5032293

2014-11-08

Abstract:Unencapsulated, exfoliated black phosphorus (BP) flakes are found to chemically degrade upon exposure to ambient conditions. Atomic force microscopy, electrostatic force microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy are employed to characterize the structure and chemistry of the degradation process, suggesting that O2 saturated H2O irreversibly reacts with BP to form oxidized phosphorus species. This interpretation is further supported by the observation that BP degradation occurs more rapidly on hydrophobic octadecyltrichlorosilane self-assembled monolayers and on H-Si(111), versus hydrophilic SiO2. For unencapsulated BP field-effect transistors, the ambient degradation causes large increases in threshold voltage after 6 hours in ambient, followed by a ~10^3 decrease in FET current on/off ratio and mobility after 48 hours. Atomic layer deposited AlOx overlayers effectively suppress ambient degradation, allowing encapsulated BP FETs to maintain high on/off ratios of ~10^3 and mobilities of ~100 cm2/(V*s) for over two weeks in ambient. This work shows that the ambient degradation of BP can be managed effectively when the flakes are sufficiently passivated. In turn, our strategy for enhancing BP environmental stability will accelerate efforts to implement BP in electronic and optoelectronic applications.

Mesoscale and Nanoscale Physics,Materials Science
High-Performance Black Phosphorus Field-Effect Transistors with Long-Term Air Stability.

Daowei He,Yiliu Wang,Yu Huang,Yi Shi,Xinran Wang,Xiangfeng Duan

DOI: https://doi.org/10.1021/acs.nanolett.8b03940

IF: 10.8

2018-01-01

Nano Letters

Abstract:Two-dimensional layered materials (2DLMs) are of considerable interest for high-performance electronic devices for their unique electronic properties and atomically thin geometry. However, the atomically thin geometry makes their electronic properties highly susceptible to the environment changes. In particular, some 2DLMs (e.g., black phosphorus (BP) and SnSe2) are unstable and could rapidly degrade over time when exposed to ambient conditions. Therefore, the development of proper passivation schemes that can preserve the intrinsic properties and enhance their lifetime represents a key challenge for these atomically thin electronic materials. Herein we introduce a simple, nondisruptive, and scalable van der Waals passivation approach by using organic thin films to simultaneously improve the performance and air stability of BP field-effect transistors (FETs). We show that dioctylbenzothienobenzothiophene (C8-BTBT) thin films can be readily deposited on BP via van der Waals epitaxy approach to protect BP against oxidation in ambient conditions over 20 d. Importantly, the noncovalent van der Waals interface between C8-BTBT and BP effectively preserves the intrinsic properties of BP, allowing us to demonstrate high-performance BP FETs with a record-high current density of 920 μA/um, hole drift velocity over 1 × 107 cm/s, and on/off ratio of 1 × 104 to ∼1 × 107 at room temperature. This approach is generally applicable to other unstable two-dimensional materials, defining a unique pathway to modulate their electronic properties and realize high-performance devices through hybrid heterojunctions.
Environmental, thermal, and electrical susceptibility of black phosphorus field effect transistors

Zenghui Wang,Arnob Islam,Rui Yang,Xuqian Zheng,Philip X.-L. Feng

DOI: https://doi.org/10.1116/1.4927371

2015-09-01

Abstract:Atomic layers of black phosphorus (P) isolated from its layered bulk make a new two-dimensional (2D) semiconducting crystal with sizable direct bandgap, high carrier mobility, and promises for 2D electronics and optoelectronics. However, the integrity of black P crystal could be susceptible to a number of environmental variables and processes, resulting in degradation in device performance even before the device optical image suggests so. Here, the authors perform a systematic study of the environmental effects on black P electronic devices through continued measurements over a month under a number of controlled conditions, including ambient light, air, and humidity, and identify evolution of device performance under each condition. The authors further examine effects of thermal and electrical treatments on inducing morphology and performance changes and failure modes in black P devices. The results suggest that procedures well established for nanodevices in other 2D materials may not directly apply to black P devices, and improved procedures need to be devised to attain stable device operation.

engineering, electrical & electronic,nanoscience & nanotechnology,physics, applied
Surface Charge Transfer Doping and Effective Passivation of Black Phosphorus Field Effect Transistors

Boran Xing,Ying Yu,Jiadong Yao,Xinyue Niu,Xiaoyuan Yan,Yali Liu,Xiaoxiang Wu,Mengge Li,Wenxuan Guo,Jian Sha,Yewu Wang

DOI: https://doi.org/10.1039/d0tc00740d

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:A metal oxide/h-BN/BP structure was built to realize electron doping and air stability for BPFETs.
Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

Xiaoli Xu,Linrun Feng,Shasha He,Yizheng Jin,Xiaojun Guo

DOI: https://doi.org/10.1109/led.2012.2210853

IF: 4.8157

2012-01-01

IEEE Electron Device Letters

Abstract:Bottom-gate top-contact zinc oxide (ZnO) thin-film transistors were fabricated with a low annealing temperature (150 °C) using ammine-hydroxo zinc precursors. The unpassivated devices present profound hysteresis in the measured current-voltage characteristics and a negative output conductance, which were attributed to the interaction of back surface with the oxygen molecules in the ambient atmosphere. To suppress the ambient influence without impacting the device's intrinsic performance, a simple low-temperature (75 °C ) solution-based passivation approach with polydimethylsiloxane was developed. The passivated devices present typical field-effect transistor behaviors of greatly improved device performance.
HfO2-passivated Black Phosphorus Field Effect Transistor with Long-Termed Stability and Enhanced Current On/off Ratio

Boran Xing,Liao Guan,Ying Yu,Xinyue Niu,Xiaoyuan Yang,Shucheng Zhang,Jiadong Yao,Dan Wang,Jian Sha,Yewu Wang

DOI: https://doi.org/10.1088/1361-6528/ab1ffe

IF: 3.5

2019-01-01

Nanotechnology

Abstract:Enhanced on/off ratio, obvious threshold voltage left shift, newly emerging bipolar field effect performance and most importantly, excellent stability in ambient condition have been reported for the HfO2-passivated black phosphorus field effect transistors. Both Raman spectra and x-ray photoelectron spectroscopy (XPS) show a thickness reduction effect after HfO2 passivation, XPS further demonstrates that the formation of P-Hf and P-O chemical bonds contributes to the thinning of layered black phosphorus (BP), in which P-Hf bonds also provide chemical protection for BP flakes from degradation. Atomic force microscopy measures the thickness of the passivation layer and also verifies the stability of the passivated BP flakes.
Enhanced Stability of Black Phosphorus Field-Effect Transistors with Sio2 Passivation

Bensong Wan,Bingchao Yang,Yue Wang,Junying Zhang,Zhongming Zeng,Zhongyuan Liu,Wenhong Wang

DOI: https://doi.org/10.1088/0957-4484/26/43/435702

IF: 3.5

2015-01-01

Nanotechnology

Abstract:Few-layer black phosphorus (BP) has attracted much attention due to its high mobility and suitable band gap for potential applic5ations in optoelectronics and flexible devices. However, its instability under ambient conditions limits its practical applications. Our investigations indicate that by passivation of the mechanically exfoliated BP flakes with a SiO2 layer, the fabricated BP field-effect transistors (FETs) exhibit greatly enhanced environmental stability. Compared to the unpassivated BP devices, which show a fast drop of on/off current ratio by a factor of 10 after one week of ambient exposure, the SiO2-passivated BP devices display a high retained on/off current ratio of over 600 after one week of exposure, just a little lower than the initial value of 810. Our investigations provide an effective route to passivate the few-layer BPs for enhancement of their environmental stability.
Wet Chemical Method for Black Phosphorus Thinning and Passivation.

Shuangqing Fan,JingSi Qiao,Jiawei Lai,Haicheng Hei,Zhihong Feng,Qiankun Zhang,Daihua Zhang,Sen Wu,Xiaodong Hu,Dong Sun,Wei Ji,Jing Liu

DOI: https://doi.org/10.1021/acsami.8b21655

IF: 9.5

2019-01-01

ACS Applied Materials & Interfaces

Abstract:Layered black phosphorus (BP) has been expected to be a promising material for future electronic and optoelectronic applications since its discovery. However, the difficulty in mass fabricating layered air-stable BP severely obstructs its potential industry applications. Here, we report a new BP chemical modification method to implement all-solution-based mass production of layered air-stable BP. This method uses the combination of two electron-deficient reagents 2,2,6,6-tetramethylpiperidinyl- N-oxyl (TEMPO) and triphenylcarbenium tetrafluorobor ([Ph3C]BF4) to accomplish thinning and/or passivation of BP in organic solvent. The field-effect transistor and photodetection devices constructed from the chemically modified BP flakes exhibit enhanced performances with environmental stability up to 4 months. A proof-of-concept BP thin-film transistor fabricated through the all-solution-based exfoliation and modification displays an air-stable and a typical p-type transistor behavior. This all-solution-based method improves the prospects of BP for industry applications.
Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering

Xuefei Li,Jingyi Wu,Yunsheng Ye,Shengman Li,Tiaoyang Li,Xiong Xiong,Xiaole Xu,Tingting Gao,Xiaolin Xie,Yanqing Wu

DOI: https://doi.org/10.1021/acsami.8b16507

2019-01-09

Abstract:Few-layer black phosphorus (BP) has recently emerged as a promising two-dimensional (2D) material for electronic and optoelectronic devices because of its high mobility and tunable band gap. However, BP is known to quickly degrade and oxidize in ambient conditions by breaking of the P-P bonds. As a result, there is a growing need to encapsulate BP that avoids oxygen and water while retaining the high electric performance of the devices. Here, we demonstrate a hydrophobic polymer encapsulation technique with improved thermal conductivity for high current density, which preserves the electrical properties of BP back-gate transistors compared to the commonly used Al2O3 encapsulation with improved mobility and minimal traps. The on-off ratio increases by more than an order of magnitude at room temperature and more than 4 orders of magnitude at cryogenic temperatures. High field transport shows the first systematic study on unprecedented breakdown characteristics up to -5.5 V for the 0.16 μm transistors with a high current of 1.2 mA/μm at 20 K. These discoveries open up a new way to achieve high-performance 2D semiconductors with significantly improved breakdown voltage, on-off ratios, and stability under ambient conditions for practical applications in electronic and optoelectronic devices.
Enhanced Stability of Black Phosphorus Field‐Effect Transistors Via Hydrogen Treatment

Bensong Wan,Qionghua Zhou,Junying Zhang,Yue Wang,Bingchao Yang,Weiming Lv,Baoshun Zhang,Zhongming Zeng,Qian Chen,Jinlan Wang,Wenhong Wang,Fusheng Wen,Jianyong Xiang,Bo Xu,Zhisheng Zhao,Yongjun Tian,Zhongyuan Liu

DOI: https://doi.org/10.1002/aelm.201700455

IF: 6.2

2018-01-01

Advanced Electronic Materials

Abstract:Atomically thin black phosphorus (BP) exhibits great potential for wide applications in future electronic and optoelectronic devices. However, BP exhibits fast ambient degradation and is thus severely limited in practical applications. Here, a simple strategy using hydrogen treatment to enhance the environmental stability of BP flakes is reported. Owing to the drastically suppressed ambient degradation by hydrogen treatment, atomic BP flakes are just slightly corroded on the surface even after up to 4 weeks in air, and more impressively, the BP field‐effect transistors still maintain over 85% of their initial mobility and ION/IOFF ratio. First‐principle calculations indicate that the hydrogen molecules are probably embedded between BP layers, and shift down the conduction band minimum, which strongly protects against the formation of superoxide on the surface and thus suppresses the ambient degradation of BP. This study provides a simple and nondestructive route to achieve air‐stable BP devices.
Surface Chemistry of Black Phosphorus under a Controlled Oxidative Environment

Wei Luo,Dmitry Y. Zemlyanov,Cory A. Milligan,Yuchen Du,Lingming Yang,Yanqing Wu,Peide D. Ye

DOI: https://doi.org/10.1088/0957-4484/27/43/434002

IF: 3.5

2016-01-01

Nanotechnology

Abstract:Black phosphorus (BP), the bulk counterpart of monolayer phosphorene, is a relatively stable phosphorus allotrope at room temperature. However, monolayer phosphorene and ultra-thin BP layers degrade in ambient atmosphere. In this paper, we report the investigation of BP oxidation and discuss the reaction mechanism based on the x-ray photoelectron spectroscopy (XPS) data. The kinetics of BP oxidation was examined under various well-controlled conditions, namely in 5% O2/Ar, 2.3% H2O/Ar, and 5% O2 and 2.3% H2O/Ar. At room temperature, the BP surface is demonstrated not to be oxidized at a high oxidation rate in 5% O2/Ar nor in 2.3% H2O/Ar, according to XPS, with the thickness of the oxidized phosphorus layer <5 Å for 5 h. On the other hand, in the O2/H2O mixture, a 30 Å thickness oxide layer was detected already after 2 h of the treatment. This result points to a synergetic effect of water and oxygen in the BP oxidation. The oxidation effect was also studied in applications to the electrical measurements of BP field-effect transistors (FETs) with or without passivation. The electrical performance of BP FETs with atomic layer deposition (ALD) dielectric passivation or h-BN passivation formed in a glove-box environment are also presented.
Study of zinc tin oxide thin-film transistor

Xiong Wang,Cai Xi-Kun,Yuan Zi-Jian,Zhu Xia-Ming,Qiu Dong-Jiang,Wu Hui-Zhen

DOI: https://doi.org/10.7498/aps.60.037305

2011-01-01

Abstract:Thin film transistors with zinc tin oxide as the active channel layer were fabricated on ITO glass by rf magnetron sputtering. SiO 2 gate dielectric was grown using plasma-enhanced chemical vapor deposition (PECVD). These devices operate with a maximum field effect mobility of 9.1 cm 2/V · s, threshold voltage of -2 V, and current on/off ratio of 10 4. © 2011 Chinese Physical Society.
Solution-Based Property Tuning of Black Phosphorus

Shuangqing Fan,Wanfu Shen,Jun Liu,Haicheng Hei,Ruixue Hu,Chunguang Hu,Daihua Zhang,Xiaodong Hu,Dong Sun,Jian-Hao Chen,Wei Ji,Jing Liu

DOI: https://doi.org/10.1021/acsami.8b14887

IF: 9.5

2018-01-01

ACS Applied Materials & Interfaces

Abstract:The air instability of black phosphorus (BP) severely hinders the development of its electronic and optoelectronic applications. Although a lot of effort has been made to passivate it against degradation in ambient conditions, approaches to further manipulate the properties of passivated BP are still very limited. Herein, we report a simple and low-cost chemical method that can achieve BP passivation and property tailoring simultaneously. The method is conducted by immersing a BP sample in the solution containing both 2,2,6,6-tetramethylpiperidinyl-N-oxyl (TEMPO) and triphenylcarbenium tetrafluorobor in a mixture of water and acetone (v/v = 1:1). After the treatment, the BP sample is functionalized with TEMPO, which not only efficiently passivates BP but also p-dopes BP to a degenerated density level of 10(13) cm(-2). The performance of the BP field effect transistor is improved after functionalization with a high I-on/I-off ratio of 10(6) and carrier mobility of 881.5 cm(2)/(V.s). The functionalization-induced doping also significantly reduces the contact resistance between BP and the Cr/Au electrode to 0.97 k Omega.mu m. Additionally, we observe a great reduction of BP electrical and optical anisotropies after functionalization. This chemical functionalization method provides a viable route to simultaneously passivate and tune the properties of BP.
Developments in stability and passivation strategies for black phosphorus

Haizeng Song,Han Wu,Tianqi Ren,Shancheng Yan,Tianhong Chen,Yi Shi

DOI: https://doi.org/10.1007/s12274-021-3385-0

IF: 9.9

2021-01-01

Nano Research

Abstract:Black phosphorus (BP), a promising two-dimensional layer material, has attracted increasing attention due to its high carrier mobility, thickness-dependent tunable bandgap, in-plane anisotropy, and other advantageous characteristics. Because of these excellent characteristics, BP has been considered for applications in optics, electronics, optoelectronics, sensors, and energy storage. However, early studies found that BP has high chemical activity due to the lone pair electrons of P atoms on the surface and edges, resulting in rapid degradation under ambient conditions and limiting many applications. Recently, these thorny issues have been alleviated through superior physical and chemical passivation techniques, and passivated BP can be used in various devices under ambient and water conditions with excellent performance over a long period. This review, highlights the critical problems addressed in solving the serious instability of BP in a harsh environment by effective passivation technology. These unique strategies can provide more researchers with a fundamental study of the fascinating properties of BP. Finally, we found that passivated BP not only showed good stability under ambient conditions but also exhibited excellent performance compared with the original BP. Therefore, it is anticipated that this overview can contribute to the application of BP.
Passivating violet phosphorus against ambient degradation for highly sensitive and long-term stable optoelectronic devices

Jinshuo Xue,Shun Wang,Ju Zhou,Qiankun Li,Ziwen Zhou,Qiang Hui,Yiqi Hu,Zhou Zhou,Zhijian Feng,Qingyu Yan,Yiqing Yu,Yuyan Weng,Rujun Tang,Xiaodong Su,Yu Xin,Fengang Zheng,Sheng Ju,Lu You,Liang Fang

DOI: https://doi.org/10.1063/5.0149368

IF: 4

2023-05-01

Applied Physics Letters

Abstract:Recent success in exfoliating violet or Hittorf's phosphorus down to monolayer reignites the research passion in this ancient yet mysterious material, questing for superior electronic and optoelectronic functionalities. Unfortunately, the poor air stability that plagues black phosphorus also exists in the violet counterpart. Aiming to provide more insight into the degradation chemistry and accordingly find a facile solution for it, herein, we employ concerted elemental, chemical and vibrational spectroscopies to reveal the critical role of oxygen and water in the degradation mechanism and pathway of violet phosphorus in ambient condition. Thereafter, a simple passivation approach by oxide encapsulation is demonstrated to realize air-stable violet phosphorus photodetector device. As the proof-of-concept, the photodetector fabricated accordingly shows superior figures of merit with ultralow dark current (< 10−13 A), high low-light responsivity (6 A W−1) and fast response time (< 10 ms) in the ultraviolet to visible spectrum, as well as great chemical robustness against harsh environments.

physics, applied
Water‐Catalyzed Oxidation of Few‐Layer Black Phosphorous in a Dark Environment

Zehua Hu,Qiang Li,Bo Lei,Qionghua Zhou,Du Xiang,Zhiyang Lyu,Fang Hu,Junyong Wang,Yinjuan Ren,Rui Guo,Eda Goki,Li Wang,Cheng Han,Jinlan Wang,Wei Chen

DOI: https://doi.org/10.1002/anie.201705012

2017-01-01

Angewandte Chemie

Abstract:Black phosphorus (BP) shows great potential in electronic and optoelectronic devices owing to its semiconducting properties, such as thickness‐dependent direct bandgap and ambipolar transport characteristics. However, the poor stability of BP in air seriously limits its practical applications. To develop effective schemes to protect BP, it is crucial to reveal the degradation mechanism under various environments. To date, it is generally accepted that BP degrades in air via light‐induced oxidation. Herein, we report a new degradation channel via water‐catalyzed oxidation of BP in the dark. When oxygen co‐adsorbs with highly polarized water molecules on BP surface, the polarization effect of water can significantly lower the energy levels of oxygen (i.e. enhanced electron affinity), thereby facilitating the electron transfer from BP to oxygen to trigger the BP oxidation even in the dark environment. This new degradation mechanism lays important foundation for the development of proper protecting schemes in black phosphorus‐based devices.
Effects of Al2O3 Capping and Post-Annealing on the Conduction Behavior in Few-Layer Black Phosphorus Field-Effect Transistors

H. M. Zheng,J. Gao,S. M. Sun,Q. Ma,Y. P. Wang,B. Zhu,W. J. Liu,H. L. Lu,S. J. Ding,David W. Zhang

DOI: https://doi.org/10.1109/jeds.2018.2804481

2018-01-01

IEEE Journal of the Electron Devices Society

Abstract:Ambient instability has been proven challenging in black phosphorus field-effect transistors (BP FETs) and a capping layer is thus needed for their practical applications. In this paper, we have examined the effects of Al2O3 capping and O-2 post-annealing on the conduction characteristic of BP FETs. With the Al2O3 capping, it forms p-type into ambipolar transport and the electron mobility dramatically increases to 20-110 cm(2)/V center dot s in our case. Interestingly, with the O-2 post-annealing, the transport can be tuned from ambipolar back to p-type as the annealing time extends. It is attributed that the Al2O3 capping introduces an n-type doping in BP channel while the O-2 post-annealing dopes BP back into p-type. Moreover, after the O-2 post-annealing the interfacial POx might be formed, resulting in the degradation of subthreshold swing and on/off current ratio.
Effect of Sc2O3 Passivation Layer on the Electrical Characteristics and Stability of InSnZnO Thin-Film Transistors

Wei Zhong,Liangyun Kang,Sunbin Deng,Lei Lu,Ruohe Yao,Linfeng Lan,Hoi Sing Kwok,Rongsheng Chen

DOI: https://doi.org/10.1109/ted.2021.3105486

2021-01-01

Abstract:We measure the electrical performance and stability of indium tin zinc oxide (ITZO) thin-film transistors (TFTs), respectively, covered with a passivation layer (PVL) of aluminum oxide (Al2O3) or scandium oxide (Sc2O3) prepared by pulsed laser deposition (PLD). The devices with the Sc2O3 PVL exhibit both satisfactory electrical performance and stability with a field effect mobility of 16.4 cm2/Vs, threshold voltage of 1.0 V, subthreshold swing of 0.09 V/decade, and especially, a minimum threshold voltage shift of 0.7 and −1.6 V under negative bias temperature stress (NBTS) and positive bias temperature stress (PBTS), respectively. This may be attributable to the suppression of oxygen vacancy formation and excellent capacity to protect the channel from environmental effects. Although the devices with the Al2O3 PVL show similar electrical performance, their stability is worse than that of the devices with Sc2O3. This shows the excellent potential of Sc2O3 thin films as a PVL.

Effective Passivation of Black Phosphorus Transistor Against Ambient Degradation by an Ultra-Thin Tin Oxide Film.

Black phosphorus field effect transistors stable in harsh conditions via surface engineering

Performance Change of Few Layer Black Phosphorus Transistors in Ambient

Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation

High-Performance Black Phosphorus Field-Effect Transistors with Long-Term Air Stability.

Environmental, thermal, and electrical susceptibility of black phosphorus field effect transistors

Surface Charge Transfer Doping and Effective Passivation of Black Phosphorus Field Effect Transistors

Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

HfO2-passivated Black Phosphorus Field Effect Transistor with Long-Termed Stability and Enhanced Current On/off Ratio

Enhanced Stability of Black Phosphorus Field-Effect Transistors with Sio2 Passivation

Wet Chemical Method for Black Phosphorus Thinning and Passivation.

Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering

Enhanced Stability of Black Phosphorus Field‐Effect Transistors Via Hydrogen Treatment

Surface Chemistry of Black Phosphorus under a Controlled Oxidative Environment

Study of zinc tin oxide thin-film transistor

Solution-Based Property Tuning of Black Phosphorus

Developments in stability and passivation strategies for black phosphorus

Passivating violet phosphorus against ambient degradation for highly sensitive and long-term stable optoelectronic devices

Water‐Catalyzed Oxidation of Few‐Layer Black Phosphorous in a Dark Environment

Effects of Al2O3 Capping and Post-Annealing on the Conduction Behavior in Few-Layer Black Phosphorus Field-Effect Transistors

Effect of Sc2O3 Passivation Layer on the Electrical Characteristics and Stability of InSnZnO Thin-Film Transistors