Abstract:A simple and scalable in situ interfacial passivation method based on pentacene film enhances the ambient stability of few‐layer black phosphorus (FL BP) as well as achieving n‐type doing. The film serves as an electron donator to regulate the Fermi level of FL‐BP flakes and reduce the Schottky barrier, leading to conversion of FL‐BP from p‐type to ambipolar. Furthermore, the strong infrared polarization‐sensitive imaging capability of FL‐BP/Pentacene is demonstrated. Few‐layer black phosphorus (FL‐BP) shows great potential in infrared polarization‐sensitive photodetection due to its narrow bandgap and strong in‐plane anisotropy. However, FL‐BP is easy to be oxidized and degraded, which severely restricts its applications. Herein, a simple and scalable in situ interfacial passivation method based on pentacene film is reported to enhance the ambient stability of FL‐BP as well as achieve n‐type doping for improved polarization‐sensitive photoimaging. High crystal quality FL‐BP flakes with intrinsic anisotropy are prepared by electrochemical exfoliation. The morphology and Raman spectra of FL‐BP/pentacene exhibit excellent stability 28 days after passivation. In addition, the hole mobility is significantly enhanced and dark current is substantially suppressed due to the interfacial passivation and n‐type doping effect. The FL‐BP/Pentacene based photodetector shows a broadband response from visible to near‐infrared with good stability. The photoresponsivity under 915 nm illumination is calculated as 2.2 mA W−1 with an anisotropy ratio of 1.29. Furthermore, the polarization imaging under the irradiation at zigzag and armchair directions directly reveals the strong infrared polarization‐sensitive imaging capability of FL‐BP/pentacene. This work also opens up new avenues to enhance the photoresponse and stability of various optoelectronics based on similarly unstable 2D materials.

Solution-Based Property Tuning of Black Phosphorus

Wet Chemical Method for Black Phosphorus Thinning and Passivation.

Effective Passivation of Black Phosphorus Against Atmosphere by Quasi-Monolayer of F4TCNQ Molecules

Modification Strategies and Prospects for Enhancing the Stability of Black Phosphorus

Developments in stability and passivation strategies for black phosphorus

Chemical Functionalization of 2D Black Phosphorus

Passivation Effect of NTCDA Nanofilm on Black Phosphorus

Surface passivation of black phosphorus via van der Waals stacked PTCDA

Sulfur-Doped Black Phosphorus Field-Effect Transistors with Enhanced Stability.

Strategies and Applications for Improving the Stability of Black Phosphorus in Physical Environment

Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation

Enhanced Stability of Black Phosphorus Field-Effect Transistors with Sio2 Passivation

Metal‐Ion‐Modified Black Phosphorus with Enhanced Stability and Transistor Performance

Enhanced Stability of Black Phosphorus Field‐Effect Transistors Via Hydrogen Treatment

Black phosphorus field effect transistors stable in harsh conditions via surface engineering

High Yield Growth and Doping of Black Phosphorus with Tunable Electronic Properties

Fabrication of Doped Black Phosphorus Crystal by the Chemical Vapor Transport Method

Covalent Functionalization of Black Phosphorus from First-Principles.

Azide Passivation of Black Phosphorus Nanosheets: Covalent Functionalization Affords Ambient Stability Enhancement

High-Performance Black Phosphorus Field-Effect Transistors with Long-Term Air Stability.

N‐Type Doping and Passivation of Black Phosphorus Using Pentacene for Infrared Polarization‐Sensitive Photodetection and Imaging