Abstract:A simple and scalable in situ interfacial passivation method based on pentacene film enhances the ambient stability of few‐layer black phosphorus (FL BP) as well as achieving n‐type doing. The film serves as an electron donator to regulate the Fermi level of FL‐BP flakes and reduce the Schottky barrier, leading to conversion of FL‐BP from p‐type to ambipolar. Furthermore, the strong infrared polarization‐sensitive imaging capability of FL‐BP/Pentacene is demonstrated. Few‐layer black phosphorus (FL‐BP) shows great potential in infrared polarization‐sensitive photodetection due to its narrow bandgap and strong in‐plane anisotropy. However, FL‐BP is easy to be oxidized and degraded, which severely restricts its applications. Herein, a simple and scalable in situ interfacial passivation method based on pentacene film is reported to enhance the ambient stability of FL‐BP as well as achieve n‐type doping for improved polarization‐sensitive photoimaging. High crystal quality FL‐BP flakes with intrinsic anisotropy are prepared by electrochemical exfoliation. The morphology and Raman spectra of FL‐BP/pentacene exhibit excellent stability 28 days after passivation. In addition, the hole mobility is significantly enhanced and dark current is substantially suppressed due to the interfacial passivation and n‐type doping effect. The FL‐BP/Pentacene based photodetector shows a broadband response from visible to near‐infrared with good stability. The photoresponsivity under 915 nm illumination is calculated as 2.2 mA W−1 with an anisotropy ratio of 1.29. Furthermore, the polarization imaging under the irradiation at zigzag and armchair directions directly reveals the strong infrared polarization‐sensitive imaging capability of FL‐BP/pentacene. This work also opens up new avenues to enhance the photoresponse and stability of various optoelectronics based on similarly unstable 2D materials.

N‐Type Doping and Passivation of Black Phosphorus Using Pentacene for Infrared Polarization‐Sensitive Photodetection and Imaging

High Performance Near Infrared Photodetector Based on In-Plane Black Phosphorus P-N Homojunction

Solution-Based Property Tuning of Black Phosphorus

Ultra-sensitive polarization-resolved black phosphorus homojunction photodetector defined by ferroelectric domains

Surface passivation of black phosphorus via van der Waals stacked PTCDA

Black Phosphorus Infrared Photodetectors with Fast Response and High Photoresponsivity

Wet Chemical Method for Black Phosphorus Thinning and Passivation.

Photo-oxidative Degradation and Protection Mechanism of Black Phosphorus: Insights from Ultrafast Dynamics.

Highly Polarized and Fast Photoresponse of Black Phosphorus‐InSe Vertical P–n Heterojunctions

Improving Harsh Environmental Stability of Few‐Layer Black Phosphorus by Local Charge Transfer

Chalcogenide Glass Waveguide-Integrated Black Phosphorus Mid-Infrared Photodetectors

Polarization and Thickness Dependent Absorption Properties of Black Phosphorus: New Saturable Absorber for Ultrafast Pulse Generation

Linearly polarized ultrafast pulse generation based on black phosphorus

Anisotropic Visible Photoluminescence from Thermally Annealed Few-layer Black Phosphorus.

Developments in stability and passivation strategies for black phosphorus

Rediscovering Black Phosphorus: A Unique Anisotropic 2D Material for Optoelectronics and Electronics

Black Phosphorus Based All-Optical-Signal-Processing: Toward High Performances and Enhanced Stability

High-Performance Black Phosphorus Field-Effect Transistors with Long-Term Air Stability.

Highly Efficient and Air-Stable Infrared Photodetector Based on 2D Layered Graphene–Black Phosphorus Heterostructure

Optical Anisotropy of Black Phosphorus in the Visible Regime

Black Phosphorus Mid-Infrared Photodetectors with High Gain