Abstract:Recently, black phosphorus (BP) has attracted enormous attention as the potential materials for next‐generation photonic device applications due to the high carrier mobility and the narrow bandgap. However, the metal–semiconductor–metal (MSM) structure of BP photodetectors cannot achieve simultaneously high photoresponsivity and fast photoresponse, due to its natural surface defects, the thinness of absorption layer, and the instability of BP in the air, which limits the application of BP MSM structure photodetectors. Here, infrared photodetectors with the multilayer BP sandwiched between the top protective layer of boron nitride and the bottom Au electrodes are demonstrated. The BP photodetectors exhibit a fast photoresponse of ≈16 µs, a broadband photodetection up to ≈2 µm, a high light on/off ratio of ≈103 which is higher than most BP photodetectors, together with an acceptable photoresponsivity of ≈1.55 A W−1 for the wavelength of 1550 nm at room temperature. Scanning photocurrent microscopy measurements show that the mechanism of BP photodetectors is a combination of photovoltaic effect and photoconductive effect. This work demonstrates an effective way to design high‐performance photovoltaic/photoconductive devices based on 2D materials. Infrared photodetectors with the multilayer black phosphorus (BP) sandwiched between the top protective layer of boron nitride and bottom Au electrodes are demonstrated. The BP photodetectors exhibit a high light on/off ratio of ≈103, a fast photoresponse of ≈16 μs for the wavelength of 1550 nm and a broadband photodetection up to ≈2 μm.

High Performance Near Infrared Photodetector Based on In-Plane Black Phosphorus P-N Homojunction

Black Phosphorus Mid-Infrared Photodetectors with High Gain

Black Phosphorus Infrared Photodetectors with Fast Response and High Photoresponsivity

Chalcogenide Glass Waveguide-Integrated Black Phosphorus Mid-Infrared Photodetectors

Multilayer Black Phosphorus Near-Infrared Photodetectors

Highly Efficient and Air-Stable Infrared Photodetector Based on 2D Layered Graphene–Black Phosphorus Heterostructure

High Performance Mid-Wave Infrared Photodetector Based on Graphene/black Phosphorus Heterojunction

Ultra-sensitive polarization-resolved black phosphorus homojunction photodetector defined by ferroelectric domains

Nanostructured Multiple-Layer Black Phosphorus Photodetector Based on Localized Surface Plasmon Resonance

High-Performance Infrared Detectors Based on Black Phosphorus/Carbon Nanotube Heterojunctions

Highly Polarized and Fast Photoresponse of Black Phosphorus‐InSe Vertical P–n Heterojunctions

Visible to Mid-Infrared Photodetector Based on Black Phosphorous-MoS2 Van Der Waals Heterojunction

Highly Polarization Sensitive Infrared Photodetector Based on Black Phosphorus-on-wse 2 Photogate Vertical Heterostructure

Black Phosphorus Photodetector Enhanced by a Planar Photonic Crystal Cavity

High‐Responsivity Mid‐Infrared Black Phosphorus Slow Light Waveguide Photodetector

Fast Photo-response of Black Phosphorus Photodetectors

High-efficiency photoelectric detector based on a p-n homojunction of monolayer black phosphorus

Low-Noise Mid-Infrared Photodetection In Bp/H-Bn/Graphene Van Der Waals Heterojunctions

Single-detector Black Phosphorus Monolithic Spectrometer with High Spectral and Temporal Resolution

Gate tunable self-powered few-layer black phosphorus broadband photodetector

High-Performance Hybrid InP QDs/Black Phosphorus Photodetector.