Abstract:Two-dimensional materials are attractive for constructing high-performance photonic chip-integrated photodetectors because of their remarkable electronic and optical properties and dangling-bond-free surfaces. However, the reported chip-integrated two-dimensional material photodetectors were mainly implemented with the configuration of metal-semiconductor-metal, suffering from high dark currents and low responsivities at high operation speed. Here, we report a van der Waals PN heterojunction photodetector, composed of p-type black phosphorous and n-type molybdenum telluride, integrated on a silicon nitride waveguide. The built-in electric field of the PN heterojunction significantly suppresses the dark current and improves the responsivity. Under a bias of 1 V pointing from n-type molybdenum telluride to p-type black phosphorous, the dark current is lower than 7 nA, which is more than two orders of magnitude lower than those reported in other waveguide-integrated black phosphorus photodetectors. An intrinsic responsivity up to 577 mA/W is obtained. Remarkably, the van der Waals PN heterojunction is tunable by the electrostatic doping to further engineer its rectification and improve the photodetection, enabling an increased responsivity of 709 mA/W. Besides, the heterojunction photodetector exhibits a response bandwidth of ~1.0 GHz and a uniform photodetection over a wide spectral range, as experimentally measured from 1500 to 1630 nm. The demonstrated chip-integrated van der Waals PN heterojunction photodetector with low dark current, high responsivity and fast response has great potentials to develop high-performance on-chip photodetectors for various photonic integrated circuits based on silicon, lithium niobate, polymer, etc.

High-responsivity and high-speed black phosphorus photodetectors integrated with proton exchanged thin-film lithium niobate waveguides

Mid-infrared Waveguide Integrated Chalcogenide Glass on Black Phosphorus Photodetectors

Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current

Broadband Black-Phosphorus Photodetectors with High Responsivity

High-Speed and High-Responsivity Silicon/Black-Phosphorus Hybrid Plasmonic Waveguide Avalanche Photodetector

Chalcogenide Glass Waveguide-Integrated Black Phosphorus Mid-Infrared Photodetectors

High‐Responsivity Mid‐Infrared Black Phosphorus Slow Light Waveguide Photodetector

High‐Speed and High‐Responsivity Hybrid Silicon/Black‐Phosphorus Waveguide Photodetectors at 2 Μm

Visible to Mid-infrared Waveband Photodetector Based on Insulator Capped Asymmetry Black Phosphorous

High Detectivity and Responsivity in Black Phosphorus/sns2 Heterostructure with Broken-Gap Energy Band Alignment

High Performance Near Infrared Photodetector Based on In-Plane Black Phosphorus P-N Homojunction

Black Phosphorus Infrared Photodetectors with Fast Response and High Photoresponsivity

High-Speed Compact Plasmonic-PdSe<sub>2</sub> Waveguide-Integrated Photodetector

Top-Gated Black Phosphorus Phototransistor For Sensitive Broadband Detection

Black Phosphorus Mid-Infrared Photodetectors with High Gain

Chip-integrated van der Waals PN heterojunction photodetector with low dark current and high responsivity

A Waveguide-Integrated Self-Powered Van Der Waals Heterostructure Photodetector with High Performance at the Telecom Wavelength.

Polarization-sensitive Broadband Photodetector Using a Black Phosphorus Vertical P–n Junction

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Ultra-sensitive polarization-resolved black phosphorus homojunction photodetector defined by ferroelectric domains

Waveguide-integrated self-powered van der Waals heterostructure photodetector with high performance at telecom wavelength