Abstract:Large‐area Schottky junction of black phosphorus (BP)/PtSe2 films‐based nano‐devices for high‐performance broadband photodetection from 532 to 2200 nmare fabricated via a depletion‐enhanced photocarrier dynamics strategy. The photodetectors show a state‐of‐the‐art operating temperature up to 470 K with photo‐responsivity and specific detectivity of 25 A W−1 and 6.4 × 1011 Jones under 1850 nm illumination. High operating temperature (HOT) broadband photodetectors are urgently necessary for extreme condition applications in infrared‐guided missiles, infrared night vision, fire safety imaging, and space exploration sensing. However, conventional photodetectors show dramatic carrier mobility decreases and carrier losses with low photoresponsivity at HOT due to the increased carrier scattering in channels at high temperatures. Herein, the HOT broadband photodetectors from room temperature to 470 K are developed for the first time by large‐area black phosphorus (BP)/PtSe2 films device arrays via a depletion‐enhanced photocarrier dynamics strategy. Attributed to the 2D Schottky junction at BP/PtSe2 interface and resulting in full depleted working channels, the BP/PtSe2 photodetector arrays exhibit high tolerance to carrier mobility decrease during the increasing operating temperature in a wide wavelength range from 532 to 2200 nm. Thus, the photodetector shows a state‐of‐the‐art operating temperature at 470 K with the photo‐responsivity (R) and specific detectivity (D*) of 25 A W−1 and 6.4 × 1011 Jones under 1850 nm illumination, respectively. Moreover, BP/PtSe2 photodetector arrays show high‐uniformity photo‐response in a large area. This work provides new strategies for high‐performance broadband photodetector arrays with HOT by Schottky junction of large‐area BP/PtSe2 films.

Broadband Black-Phosphorus Photodetectors with High Responsivity

High-responsivity and high-speed black phosphorus photodetectors integrated with proton exchanged thin-film lithium niobate waveguides

Mid-infrared Waveguide Integrated Chalcogenide Glass on Black Phosphorus Photodetectors

Top-Gated Black Phosphorus Phototransistor For Sensitive Broadband Detection

Large‐Area Black Phosphorus/PtSe2 Schottky Junction for High Operating Temperature Broadband Photodetectors

Mid-infrared time-resolved photoconduction in black phosphorus

A black phosphorus photo-detector for multispectral, high-resolution imaging

Black Phosphorus Mid-Infrared Photodetectors with High Gain

Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current

Black Silicon Photodetector with Excellent Comprehensive Properties by Rapid Thermal Annealing and Hydrogenated Surface Passivation

Ultrabroadband and Multiband Infrared/terahertz Photodetectors with High Sensitivity

Polarization-sensitive Broadband Photodetector Using a Black Phosphorus Vertical P–n Junction

Chalcogenide Glass Waveguide-Integrated Black Phosphorus Mid-Infrared Photodetectors

Large‐Area Black Phosphorus/PtSe2 Schottky Junction for High Operating Temperature Broadband Photodetectors (Small 28/2023)

Black Phosphorus Infrared Photodetectors with Fast Response and High Photoresponsivity

Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors

Plasmonic Enhanced Polarization Sensitive Black Phosphorus Photodetection Device

High‐Responsivity Mid‐Infrared Black Phosphorus Slow Light Waveguide Photodetector

High-Speed and High-Responsivity Silicon/Black-Phosphorus Hybrid Plasmonic Waveguide Avalanche Photodetector

Sensitive Terahertz Detection and Imaging Driven by the Photothermoelectric Effect in Ultrashort-Channel Black Phosphorus Devices

High‐Speed and High‐Responsivity Hybrid Silicon/Black‐Phosphorus Waveguide Photodetectors at 2 Μm