Mid-infrared Waveguide Integrated Chalcogenide Glass on Black Phosphorus Photodetectors

Hongtao Lin,Skylar Deckoff-Jones,Derek Kita,Hanyu Zheng,Duanhui Li,Wei Zhang,Juejun Hu

DOI: https://doi.org/10.1364/cleo_si.2018.sm2i.8

2018-01-01

Abstract:The first mid-infrared waveguide integrated black phosphorus photodetector was fabricated and characterized with a responsivity of 40 mA/W at 2185 nm wavelength. (C) 2018 Optical Society of America

What problem does this paper attempt to address?

Chalcogenide Glass Waveguide-Integrated Black Phosphorus Mid-Infrared Photodetectors

Skylar Deckoff-Jones,Hongtao Lin,Derek Kita,Hanyu Zheng,Duanhui Li,Wei Zhang,Juejun Hu

DOI: https://doi.org/10.1088/2040-8986/aaadc5

IF: 2.1

2018-01-01

Journal of Optics

Abstract:Black phosphorus (BP) is a promising 2D material that has unique in-plane anisotropy and a 0.3 eV direct bandgap, making it an attractive material for mid-IR photodetectors. So far, waveguide integrated BP photodetectors have been limited to the near-IR on top of Si waveguides that are unable to account for BP’s crystalline orientation. In this work, we employ mid-IR transparent chalcogenide glass (ChG) both as a broadband mid-IR transparent waveguiding material to enable waveguide-integration of BP detectors, and as a passivation layer to prevent BP degradation during device processing as well as in ambient atmosphere post-fabrication. Our ChG-on-BP approach not only leads to the first demonstration of mid-IR waveguide-integrated BP detectors, but also allows us to fabricate devices along different crystalline axes of BP to investigate, for the first time, the impact of in-plane anisotropy on photoresponse of waveguide-integrated devices. The best device exhibits responsivity up to 40 mA W−1 and noise equivalent power as low as 30 pW Hz−1/2 at 2185 nm wavelength. We also found that photodetector responsivities changed by an order of magnitude with different BP orientations. This work validates BP as an effective photodetector material in the mid-IR, and demonstrates the power of the glass-on-2D-material platform for prototyping of 2D material photonic devices.
High-responsivity and high-speed black phosphorus photodetectors integrated with proton exchanged thin-film lithium niobate waveguides

Youtian Hu,Fan Yang,Jiamin Chen,Shijia Lu,Qinyu Zeng,Huangpu Han,Yujie Ma,Zhigang Zhao,Guangyue Chai,Bingxi Xiang,Shuangchen Ruan

DOI: https://doi.org/10.1364/OE.497756

2023-08-14

Abstract:We present a high-performance broadband (450-1550 nm) black phosphorus photodetector based on a thin-film lithium niobate waveguide. The waveguides are fabricated by the proton exchange method with flat surfaces, which reduces the stress and deformation of two-dimensional materials. At a wavelength of 1550 nm, the photodetector simultaneously achieves a high responsivity and wide bandwidth, with a responsivity as high as 147 A/W (at an optical power of 17 nW), a 3-dB bandwidth of 0.86 GHz, and a detectivity of 3.04 × 1013 Jones. Our photodetector exhibits one of the highest responsivity values among 2D material-integrated waveguide photodetectors.
Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current

Nathan Youngblood,Che Chen,Steven J. Koester,Mo Li

DOI: https://doi.org/10.1038/nphoton.2015.23

IF: 35

2015-03-02

Nature Photonics

Abstract:Layered two-dimensional materials have demonstrated novel optoelectronic properties and are well suited for integration in planar photonic circuits. Graphene, for example, has been utilized for wideband photodetection. However, because graphene lacks a bandgap, graphene photodetectors suffer from very high dark current. In contrast, layered black phosphorous, the latest addition to the family of two-dimensional materials, is ideal for photodetector applications due to its narrow but finite bandgap. Here, we demonstrate a gated multilayer black phosphorus photodetector integrated on a silicon photonic waveguide operating in the near-infrared telecom band. In a significant advantage over graphene devices, black phosphorus photodetectors can operate under bias with very low dark current and attain an intrinsic responsivity up to 135 mA W−1 and 657 mA W−1 in 11.5-nm- and 100-nm-thick devices, respectively, at room temperature. The photocurrent is dominated by the photovoltaic effect with a high response bandwidth exceeding 3 GHz.

optics,physics, applied
Waveguide-Integrated PdSe2 Photodetector over a Broad Infrared Wavelength Range

Jianghong Wu,Hui Ma,Chuyu Zhong,Maoliang Wei,Chunlei Sun,Yuting Ye,Yan Xu,Bo Tang,Ye Luo,Boshu Sun,Jialing Jian,Hao Dai,Hongtao Lin,Lan Li

DOI: https://doi.org/10.1021/acs.nanolett.2c02099

IF: 10.8

2022-01-01

Nano Letters

Abstract:Hybrid integration of van der Waals materials on a photonic platform enables diverse exploration of novel active functions and significant improvement in device performance for next-generation integrated photonic circuits, but developing waveguide-integrated photodetectors based on conventionally investigated transition metal dichalcogenide materials at the full optical telecommunication bands and mid-infrared range is still a challenge. Here, we integrate PdSe2 with silicon waveguide for on-chip photodetection with a high responsivity from 1260 to 1565 nm, a low noise-equivalent power of 4.0 pWmiddotHz(-0.5), a 3-dB bandwidth of 1.5 GHz, and a measured data rate of 2.5 Gbitmiddots(-1). The achieved PdSe2 photodetectors provide new insights to explore the integration of novel van der Waals materials with integrated photonic platforms and exhibit great potential for diverse applications over a broad infrared range of wavelengths, such as on-chip sensing and spectroscopy.
Monolithic Chalcogenide Glass Waveguide Integrated Interband Cascaded Laser

Hongtao Lin,Chul Soo Kim,Lan Li,Mijin Kim,William W. Bewley,Charles D. Merritt,Chadwick L. Canedy,Igor Vurgaftman,A. N. U. Agarwal,Kathleen Richardson,Juejun Hu,Jerry R. Meyer

DOI: https://doi.org/10.1364/ome.435061

2021-01-01

Optical Materials Express

Abstract:Mid-infrared photonic integrated circuits (PICs) that combine on-chip light sources with other optical components constitute a key enabler for applications such as chemical sensing, light detection, ranging, and free-space communications. In this paper, we report the monolithic integration of interband cascade lasers emitting at 3.24 µm with passive, high-index-contrast waveguides made of chalcogenide glasses. Output from the chalcogenide waveguides exhibits pulsed peak power up to 150 mW (without roll-over), threshold current density 280 A/cm2, and slope efficiency 100 mW/A at 300 K, with a lower bound of 38% efficiency for coupling between the two waveguides. These results represent an important step toward the realization of fully integrated mid-infrared PICs.
Waveguide-integrated PdSe2 photodetector with high responsivity and speed in the near-infrared range across the O+E+S+C bands

Jianghong Wu,Hui Ma,Chuyu Zhong,Maoliang Wei,Chunlei Sun,Yuting Ye,Yan Xu,Bo Tang,Ye Luo,Boshu Sun,Jialing Jian,Hao Dai,Hongtao Lin,Lan Li

DOI: https://doi.org/10.21203/rs.3.rs-1399761/v1

2022-01-01

Abstract:Abstract Hybrid integration of two-dimensional (2D) materials on a silicon photonic platform enables diverse exploration of novel active functions and significant improvement in device performance for next-generation silicon integrated photonic circuits. 2D transition metal dichalcogenide materials (TMDCs) have attracted extensive attention for photodetectors, but developing high-performance waveguide-integrated photodetectors based on conventionally investigated 2D TMDCs at the telecom C-band is still a big challenge because of their large optical bandgap and slow carrier mobility. Here, we propose PdSe2, a new type of 2D TMDC, to be integrated with silicon photonic components for on-chip photodetection with high responsivity and speed in the datacom and telecom optical bands ranging from the O-band to the C-band. The obtained waveguide-integrated photodetectors show a high responsivity of 1190.2 mA W−1 at 1550 nm and a low noise-equivalent power of 4.0 pW Hz-0.5 at 5V. The 3 dB bandwidth reaches up to 1.5 GHz, and the measured data rate is 2.5 Gbit s−1. The achieved PdSe2 photodetectors provide new insights to explore the integration of novel 2D TMDCs with silicon photonics and demonstrate the potential of integrated photodetectors for applications in diverse areas, including optical communications, on-chip spectroscopy, and sensing.
High-Speed Compact Plasmonic-PdSe<sub>2</sub> Waveguide-Integrated Photodetector

Jialing Jian,Jianghong Wu,Chuyu Zhong,Hui Ma,Boshu Sun,Yuting Ye,Ye Luo,Maoliang Wei,Kunhao Lei,Ruizhe Liu,Zequn Chen,Guangyi Li,Hao Dai,Renjie Tang,Chunlei Sun,Junying Li,Wei Li,Ming Li,Hongtao Lin,Lan Li

DOI: https://doi.org/10.1021/acsphotonics.3c00453

IF: 7

2023-01-01

ACS Photonics

Abstract:Waveguide-integrated photodetectors are essential components in integrated photonic circuits since they facilitate light conversion into electrical signals. Nonetheless, optical absorption and carrier collection can significantly affect the device performance. As a solution to this issue, plasmonic slot waveguides confine optical energy within a subwavelength scale in a photoconductive detector, enhancing optical absorption and providing extremely short channels to collect carriers. Two-dimensional van der Waals layered palladium selenide (PdSe2) exhibits the merits of a narrow bandgap and high carrier mobility, thus positioning it as a favorable candidate material for photodetectors operating at the telecommunication band. In this study, we propose and experimentally verify a high-speed PdSe2-plasmonic waveguide-integrated photodetector with a dark current of 4.5 mu A and an intrinsic responsivity of 560.1 mA center dot W-1 at 3 V. Additionally, it has an internal quantum efficiency of 32.3%, and the measured 3 dB bandwidth is 17.5 GHz. This integrated photodetector fulfills the requirements of various critical applications in optical communication, microwave photonics, sensing, and imaging.
Broadband Black-Phosphorus Photodetectors with High Responsivity

Mingqiang Huang,Mingliang Wang,Cheng Chen,Zongwei Ma,Xuefei Li,Junbo Han,Yanqing Wu

DOI: https://doi.org/10.1002/adma.201506352

IF: 29.4

2016-01-01

Advanced Materials

Abstract:An array of black-phosphorus photodetectors with channel lengths down to 100 nm is fabricated, and temperature-dependent photodetection measurements from 300 K down to 20 K are carried out. The devices show high photoresponse in a broadband spectral range with a record-high photoresponsivity of 4.3 x 10(6) A W-1 at 300 K for the 100 nm device.
Black Phosphorus Mid-Infrared Photodetectors with High Gain

Qiushi Guo,Andreas Pospischil,Maruf Bhuiyan,Hao Jiang,He Tian,Damon Farmer,Bingchen Deng,Cheng Li,Shu-Jen Han,Han Wang,Qiangfei Xia,Tso-Ping Ma,Thomas Mueller,Fengnian Xia

DOI: https://doi.org/10.1021/acs.nanolett.6b01977

IF: 10.8

2016-01-01

Nano Letters

Abstract:Recently, black phosphorus (BP) has joined the two-dimensional material family as a promising candidate for photonic applications due to its moderate bandgap, high carrier mobility, and compatibility with a diverse range of substrates. Photodetectors are probably the most explored BP photonic devices, however, their unique potential compared with other layered materials in the mid-infrared wavelength range has not been revealed. Here, we demonstrate BP mid-infrared detectors at 3.39 μm with high internal gain, resulting in an external responsivity of 82 A/W. Noise measurements show that such BP photodetectors are capable of sensing mid-infrared light in the picowatt range. Moreover, the high photoresponse remains effective at kilohertz modulation frequencies, because of the fast carrier dynamics arising from BP's moderate bandgap. The high photoresponse at mid-infrared wavelengths and the large dynamic bandwidth, together with its unique polarization dependent response induced by low crystalline symmetry, can be coalesced to promise photonic applications such as chip-scale mid-infrared sensing and imaging at low light levels.
Mid-infrared time-resolved photoconduction in black phosphorus

Ryan J. Suess,Edward Leong,Joseph L. Garrett,Tong Zhou,Reza Salem,Jeremy N. Munday,Thomas E. Murphy,Martin Mittendorff

DOI: https://doi.org/10.48550/arXiv.1609.02095

2016-09-07

Materials Science

Abstract:Black phosphorus has attracted interest as a material for use in optoelectronic devices due to many favorable properties such as a high carrier mobility, field-effect, and a direct bandgap that can range from 0.3 eV in its bulk crystalline form to 2 eV for a single atomic layer. The low bandgap energy for bulk black phosphorus allows for direct transition photoabsorption that enables detection of light out to mid-infrared frequencies. In this work we characterize the room temperature optical response of a black phosphorus photoconductive detector at wavelengths ranging from 1.56 $\mu$m to 3.75 $\mu$m. Pulsed autocorrelation measurements in the near-infrared regime reveal a strong, sub-linear photocurrent nonlinearity with a response time of 1 ns, indicating that gigahertz electrical bandwidth is feasible. Time resolved photoconduction measurements covering near- and mid-infrared frequencies show a fast 65 ps rise time, followed by a carrier relaxation with a time scale that matches the intrinsic limit determined by autocorrelation. The sublinear photoresponse is shown to be caused by a reduction in the carrier relaxation time as more energy is absorbed in the black phosphorus flake and is well described by a carrier recombination model that is nonlinear with excess carrier density. The device exhibits a measured noise-equivalent power of 530 pW/$\sqrt{\text{Hz}}$ which is the expected value for Johnson noise limited performance. The fast and sensitive room temperature photoresponse demonstrates that black phosphorus is a promising new material for mid-infrared optoelectronics.
Waveguide-integrated mid-infrared photodetection using graphene on a scalable chalcogenide glass platform

Jordan Goldstein,Hongtao Lin,Skylar Deckoff-Jones,Marek Hempel,Ang-Yu Lu,Kathleen A. Richardson,Tomás Palacios,Jing Kong,Juejun Hu,Dirk Englund

DOI: https://doi.org/10.1038/s41467-022-31607-7

IF: 16.6

2022-07-07

Nature Communications

Abstract:Abstract The development of compact and fieldable mid-infrared (mid-IR) spectroscopy devices represents a critical challenge for distributed sensing with applications from gas leak detection to environmental monitoring. Recent work has focused on mid-IR photonic integrated circuit (PIC) sensing platforms and waveguide-integrated mid-IR light sources and detectors based on semiconductors such as PbTe, black phosphorus and tellurene. However, material bandgaps and reliance on SiO 2 substrates limit operation to wavelengths λ ≲ 4 μm. Here we overcome these challenges with a chalcogenide glass-on-CaF 2 PIC architecture incorporating split-gate photothermoelectric graphene photodetectors. Our design extends operation to λ = 5.2 μm with a Johnson noise-limited noise-equivalent power of 1.1 nW/Hz 1/2 , no fall-off in photoresponse up to f = 1 MHz, and a predicted 3-dB bandwidth of f 3dB > 1 GHz. This mid-IR PIC platform readily extends to longer wavelengths and opens the door to applications from distributed gas sensing and portable dual comb spectroscopy to weather-resilient free space optical communications.

multidisciplinary sciences
Si-Cmos Compatible Materials and Devices for Mid-Ir Microphotonics

Pao Tai Lin,Vivek Singh,Jianfei Wang,Hongtao Lin,Juejun Hu,Kathleen Richardson,J. David Musgraves,Igor Luzinov,Joel Hensley,Lionel C. Kimerling,Anu Agarwal

DOI: https://doi.org/10.1364/ome.3.001474

2013-01-01

Optical Materials Express

Abstract:CMOS compatible mid-Infrared (mid-IR) microphotonics including (1) broadband SOUP (Silicon on Oxide Undercladding Pedestal) waveguides; and (2) mid-IR transparent chalcogenide glass (ChGs) waveguides monolithically integrated with a PbTe thin film photodetector; are demonstrated. Using a pedestal undercladding geometry we obtain an optical loss for our Si waveguide which is 10 dB/cm lower compared to other waveguides using planar SiO2 cladding at λ = 5 µm, and a fundamental mode is seen over a broad mid-IR spectral range. To realize a fully integrated mid-IR on-chip system, in parallel, we develop PbTe thin film detectors that can be deposited on various mid-IR platforms through a thermal evaporation technique, offering high photoresponsivity of 25 V/W from λ = 1 µm to 4 µm. The detector can be efficiently integrated, using a suitable spacer, to an underlying Chalcogenide glass (ChGs) waveguide. Our results of low loss waveguides and integrated thin film detectors enable Si-CMOS microphotonics for mid-IR applications.
High‐Responsivity Mid‐Infrared Black Phosphorus Slow Light Waveguide Photodetector

Yiming Ma,Bowei Dong,Jingxuan Wei,Yuhua Chang,Li Huang,Kah‐Wee Ang,Chengkuo Lee

DOI: https://doi.org/10.1002/adom.202000337

IF: 9

2020-05-10

Advanced Optical Materials

Abstract:Black phosphorus (BP) offers unique opportunities for mid‐infrared (MIR) waveguide photodetectors due to its narrow direct bandgap and layered lattice structure. Further miniaturization of the photodetector will improve operation speed, signal‐to‐noise ratio, and internal quantum efficiency. However, it is challenging to maintain high responsivities in miniaturized BP waveguide photodetectors because of reduced light–matter interaction lengths. To address this issue, a method utilizing the slow light effect in photonic crystal waveguides (PhCWGs) is proposed and experimentally demonstrated. A shared‐BP photonic system is proposed and utilized to fairly and precisely characterize the slow light enhancement. Close to the band edge around 3.8 µm, the responsivity is enhanced by more than tenfold in the BP photodetector on a 10 µm long PhCWG as compared with the counterpart on a subwavelength grating waveguide. At a 0.5 V bias, the BP PhCWG photodetector achieves a 11.31 A W−1 responsivity and a 0.012 nW Hz−1/2 noise equivalent power. The trap‐induced photoconductive gain is validated as both the dominant photoresponse mechanism and the major limiting factor of the response speed. The BP slow light waveguide photodetector is envisioned to realize miniaturized high‐performance on‐chip MIR systems for widespread applications including environmental monitoring, industrial process control, and medical diagnostics.

materials science, multidisciplinary,optics
Planar Chalcogenide Glass Mid-Infrared Photonics

Hongtao Lin,Lan Li,Yi Zou,Fei Deng,Chaoying Ni,Sylvain Danto,J. David Musgraves,Kathleen Richardson,Stephen T. Kozacik,Maciej Murakowski,Dennis Prather,Juejun Hu

DOI: https://doi.org/10.1117/12.2035688

2014-01-01

Abstract:Chalcogenide glasses, namely the amorphous compounds containing sulfur, selenium, and/or tellurium, have emerged as a promising material candidate for mid-infrared integrated photonics given their wide optical transparency window, high linear and nonlinear indices, as well as their capacity for monolithic integration on a wide array of substrates. Exploiting these unique features of the material, we demonstrated high-index-contrast, waveguide-coupled As2Se3 chalcogenide glass resonators monolithically integrated on silicon with a high intrinsic quality factor of 2 x 10(5) at 5.2 micron wavelength, and what we believe to be the first waveguide photonic crystal cavity operating in the mid-infrared.
High‐Speed and High‐Responsivity Hybrid Silicon/Black‐Phosphorus Waveguide Photodetectors at 2 Μm

Yanlong Yin,Rui Cao,Jingshu Guo,Chaoyue Liu,Jaing Li,Xianglian Feng,Huide Wang,Wei Du,Akeel Qadir,Han Zhang,Yungui Ma,Shirring Gao,Yang Xu,Yaocheng Shi,Limin Tong,Daoxin Dai

DOI: https://doi.org/10.1002/lpor.201900032

2019-01-01

Laser & Photonics Review

Abstract:Silicon photonics is being extended from the near-infrared (near-IR) window of 1.3-1.5 μm for optical fiber communications to the mid-infrared (mid-IR) wavelength-band of 2 μm or longer for satisfying the increasing demands in many applications. Mid-IR waveguide photodetectors on silicon have attracted intensive attention as one of the indispensable elements for various photonic systems. Previously high-performance waveguide photodetectors on silicon were realized for the near-IR window of 1.3-1.5 μm by introducing another semiconductor material (e.g., Ge, and III-V compounds) in the active region. Unfortunately, these traditional semiconductor materials do not work well for the wavelength of 2 μm or longer because the light absorption becomes very weak. As an alternative, two-dimensional materials provide a new and promising option for enabling active photonic devices on silicon. Here black-phosphorus (BP) thin films with optimized medium thicknesses ( 40 nm) are introduced as the active material for light absorption and silicon/BP hybrid ridge waveguide photodetectors are demonstrated with a high responsivity at a low bias voltage. And up to 4.0Gbps data transmission is achieved at 2μm.
High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

Jianghong Wu,Maoliang Wei,Jianglong Mu,Hui Ma,Chuyu Zhong,Yuting Ye,Chunlei Sun,Bo Tang,Lichun Wang,Junying Li,Xiaomin Xu,Bilu Liu,Lan Li,Hongtao Lin

DOI: https://doi.org/10.1021/acsnano.1c04359

IF: 17.1

2021-01-01

ACS Nano

Abstract:Due to the excellent electrical and optical properties and their integration capability without lattice matching requirements, low-dimensional materials have received increasing attention in silicon photonic circuits. Bi2O2Se with high carrier mobility, narrow bandgap, and good air stability is very promising for high-performance near-infrared photodetectors. Here, the chemical vapor deposition method is applied to grow Bi2O2Se onto mica, and our developed polycarbonate/polydimethylsiloxane-assisted transfer method enables the clean and intact transfer of Bi2O2Se on top of a silicon waveguide. We demonstrated the Bi2O2Se/Si waveguide integrated photodetector with a small dark current of 72.9 nA, high responsivity of 3.5 A·W-1, fast rise/decay times of 22/78 ns, and low noise-equivalent power of 15.1 pW·Hz-0.5 at an applied voltage of 2 V in the O-band for transverse electric modes. Additionally, a microring resonator is designed for enhancing light-matter interaction, resulting in a wavelength-sensitive photodetector with reduced dark current (15.3 nA at 2 V) and more than a 3-fold enhancement in responsivity at the resonance wavelength, which is suitable for spectrally resolved applications. These results promote the integration of Bi2O2Se with a silicon photonic platform and are expected to accelerate the future use of integrated photodetectors in spectroscopy, sensing, and communication applications.
High-performance Flexible Waveguide-Integrated Photodetectors

Lan Li,Hongtao Lin,Yizhong Huang,Ren-Jye Shiue,Anupama Yadav,Junying Li,Jerome Michon,Dirk Englund,Kathleen Richardson,Tian Gu,Juejun Hu

DOI: https://doi.org/10.1364/optica.5.000044

IF: 10.4

2018-01-01

Optica

Abstract:Mechanically flexible photonic devices are essential building blocks for novel bio-integrated optoelectronic systems, wearable sensors, and flexible consumer electronics. Here we describe the design and experimental demonstration of high-performance flexible semiconductor nanomembrane photodetectors integrated with single-mode chalcogenide glass waveguides. Through a combination of a waveguide-integrated architecture to enhance light-matter interactions and mechanical engineering of multilayer configurations to suppress strains, the detector devices exhibit record optical and mechanical performance. The devices feature a noise equivalent power as low as 0.02 pW.Hz(1/2), a linear dynamic range exceeding 70 dB, and a 3-dB bandwidth of 1.4 GHz, all measured at 1530 nm wavelength. The devices withstand 1000 bending cycles at a submillimeter radius without degradation in their optoelectronic responses. These metrics represent significant improvements over state-of-the-art flexible photodetectors. (c) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
High-Speed and High-Responsivity Silicon/Black-Phosphorus Hybrid Plasmonic Waveguide Avalanche Photodetector

Chaoyue Liu,Jingshu Guo,Laiwen Yu,Yuluan Xiang,Hengtai Xiang,Jiang Li,Daoxin Dai

DOI: https://doi.org/10.1021/acsphotonics.2c00244

IF: 7

2022-01-01

ACS Photonics

Abstract:Two-dimensional materials have attracted muchinterest for realizing novel optoelectronic devices, e.g., photo-detectors. In this work, we demonstrate a high-performance black-phosphorus avalanche photodetector based on a silicon hybridplasmonic waveguide with double nanoslots, in which way the lightabsorption by black phosphorus is enhanced and the carrier transittime is reduced simultaneously. Benefiting from the avalanchemultiplication process in black phosphorus, the present waveguideavalanche photodetector exhibits high responsivities of 66 A/W(@optical power of 2.9 mu W) and 125 A/W (@optical power of 1.4 mu W) for the wavelength bands of 1.55 and 1.95 mu m, respectively.The measured 3 dB-bandwidth is 1.05 GHz, which is at least three orders of magnitude higher than those reported high-gainphotodetectors based on two-dimensional materials. The present high-performance silicon/BP waveguide avalanche photodetectorprovides a promising option toward the applications of optical sensing, optical imaging, and optical communications in thewavelength band of 1.55/1.95 mu m and even beyond.
Integrated high responsivity photodetectors based on graphene/glass hybrid waveguide.

Gencheng Wang,Tingge Dai,Zhetao Lvy,Yinlei Hao,Hui Yu,Yuehai Wang,Yubo Li,Xiaoqing Jiang,Jianyi Yang

DOI: https://doi.org/10.1364/OL.41.004214

IF: 3.6

2016-01-01

Optics Letters

Abstract:We propose and fabricate an integrated graphene/glass hybrid photodetector (PD) with high responsivity and broad spectral bandwidth. The glass straight waveguide enables high absorption of the evanescent light of transverse magnetic (TM) mode propagating parallel to the single layer of graphene. It is based on the mechanism of light-induced change in conductance. As a result, a responsivity as high as 0.72 A/W at a low bias voltage of -0.1 V for a wide wavelength range from 1510 to 1630 nm is experimentally obtained. The proposed graphene/glass hybrid PD could find important applications in graphene-based photonic integrated circuits. (C) 2016 Optical Society of America
HgCdTe/black phosphorus van der Waals heterojunction for high-performance polarization-sensitive midwave infrared photodetector

Hanxue Jiao,Xudong Wang,Yan Chen,Shuaifei Guo,Shuaiqin Wu,Chaoyu Song,Shenyang Huang,Xinning Huang,Xiaochi Tai,Tie Lin,Hong Shen,Hugen Yan,Weida Hu,Xiangjian Meng,Junhao Chu,Yuanbo Zhang,Jianlu Wang

DOI: https://doi.org/10.1126/sciadv.abn1811

IF: 13.6

2022-05-12

Science Advances

Abstract:New-generation infrared detectors call for higher operation temperature and polarization sensitivity. For traditional HgCdTe infrared detectors, the additional polarization optics and cryogenic cooling are necessary to achieve high-performance infrared polarization detection, while they can complicate this system and limit the integration. Here, a mixed-dimensional HgCdTe/black phosphorous van der Waals heterojunction photodiode is proposed for polarization-sensitive midwave infrared photodetection. Benefiting from van der Waals integration, type III broken-gap band alignment heterojunctions are achieved. Anisotropy optical properties of black phosphorous bring polarization sensitivity from visible light to midwave infrared without external optics. Our devices show an outstanding performance at room temperature without applied bias, with peak blackbody detectivity as high as 7.93 × 10 10 cm Hz 1/2 W −1 and average blackbody detectivity over 2.1 × 10 10 cm Hz 1/2 W −1 in midwave infrared region. This strategy offers a possible practical solution for next-generation infrared detector with high operation temperature, high performance, and multi-information acquisition.

multidisciplinary sciences

Mid-infrared Waveguide Integrated Chalcogenide Glass on Black Phosphorus Photodetectors

Chalcogenide Glass Waveguide-Integrated Black Phosphorus Mid-Infrared Photodetectors

High-responsivity and high-speed black phosphorus photodetectors integrated with proton exchanged thin-film lithium niobate waveguides

Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current

Waveguide-Integrated PdSe2 Photodetector over a Broad Infrared Wavelength Range

Monolithic Chalcogenide Glass Waveguide Integrated Interband Cascaded Laser

Waveguide-integrated PdSe2 photodetector with high responsivity and speed in the near-infrared range across the O+E+S+C bands

High-Speed Compact Plasmonic-PdSe<sub>2</sub> Waveguide-Integrated Photodetector

Broadband Black-Phosphorus Photodetectors with High Responsivity

Black Phosphorus Mid-Infrared Photodetectors with High Gain

Mid-infrared time-resolved photoconduction in black phosphorus

Waveguide-integrated mid-infrared photodetection using graphene on a scalable chalcogenide glass platform

Si-Cmos Compatible Materials and Devices for Mid-Ir Microphotonics

High‐Responsivity Mid‐Infrared Black Phosphorus Slow Light Waveguide Photodetector

Planar Chalcogenide Glass Mid-Infrared Photonics

High‐Speed and High‐Responsivity Hybrid Silicon/Black‐Phosphorus Waveguide Photodetectors at 2 Μm

High-Performance Waveguide-Integrated Bi2O2Se Photodetector for Si Photonic Integrated Circuits.

High-performance Flexible Waveguide-Integrated Photodetectors

High-Speed and High-Responsivity Silicon/Black-Phosphorus Hybrid Plasmonic Waveguide Avalanche Photodetector

Integrated high responsivity photodetectors based on graphene/glass hybrid waveguide.

HgCdTe/black phosphorus van der Waals heterojunction for high-performance polarization-sensitive midwave infrared photodetector