High-Performance Infrared Detectors Based on Black Phosphorus/Carbon Nanotube Heterojunctions

Yanming Zhang,Qichao Li,Xiaowo Ye,Long Wang,Zhiyan He,Teng Zhang,Kunchan Wang,Fangyuan Shi,Jingyun Yang,Shenghao Jiang,Xuri Wang,Changxin Chen
DOI: https://doi.org/10.3390/nano13192700
IF: 5.3
2023-10-04
Nanomaterials
Abstract:Infrared detectors have broad application prospects in the fields of detection and communication. Using ideal materials and good device structure is crucial for achieving high-performance infrared detectors. Here, we utilized black phosphorus (BP) and single-walled carbon nanotube (SWCNT) films to construct a vertical van der Waals heterostructure, resulting in high-performance photovoltaic infrared detectors. In the device, a strong built-in electric field was formed in the heterojunction with a favored energy-band matching between the BP and the SWCNT, which caused a good photovoltaic effect. The fabricated devices exhibited a diode-like rectification behavior in the dark, which had a high rectification ratio up to a magnitude of 104 and a low ideal factor of 1.4. Under 1550 nm wavelength illumination, the 2D BP/SWCNT film photodetector demonstrated an open-circuit voltage of 0.34 V, a large external power conversion efficiency (η) of 7.5% and a high specific detectivity (D*) of 3.1 × 109 Jones. This external η was the highest among those for the photovoltaic devices fabricated with the SWCNTs or the heterostructures based on 2D materials and the obtained D* was also higher than those for most of the infrared detectors based on 2D materials or carbon materials. This work showcases the application potential of BP and SWCNTs in the detection field.
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
What problem does this paper attempt to address?
The problem this paper attempts to address is the development of high-performance infrared detectors. Specifically, the researchers constructed a vertical van der Waals heterojunction structure using black phosphorus (BP) and single-walled carbon nanotube (SWCNT) films to achieve a high-performance photovoltaic infrared detector. This structure exhibits diode rectification characteristics in dark conditions and shows high open-circuit voltage, external power conversion efficiency, and specific detectivity under 1550 nm wavelength illumination. ### Main Issues: 1. **Improving the performance of infrared detectors**: Existing infrared detectors have certain shortcomings, such as the need for an external bias or low sensitivity. This paper aims to improve the performance of infrared detectors by constructing a BP/SWCNT heterojunction. 2. **Optimizing materials and structures**: Selecting suitable sensitive materials and optimizing device structures are crucial for achieving high-performance infrared detectors. This paper chooses black phosphorus and single-walled carbon nanotubes because of their excellent optoelectronic properties and band alignment. ### Specific Goals: - **Constructing a high-performance heterojunction**: Utilizing black phosphorus and single-walled carbon nanotubes to construct a vertical van der Waals heterojunction, forming a strong built-in electric field to achieve a good photovoltaic effect. - **Achieving high sensitivity and high efficiency**: Under 1550 nm wavelength illumination, achieving a high open-circuit voltage (0.34 V), large external power conversion efficiency (7.5%), and high specific detectivity (3.1 × 10^9 Jones). - **Demonstrating application potential**: Showcasing the application potential of BP and SWCNT in the field of infrared detection through experimental results, particularly in military and civilian detection and communication applications. ### Key Contributions: - **Innovative material combination**: Constructing a high-performance infrared detector by leveraging the complementary advantages of black phosphorus and single-walled carbon nanotubes. - **Excellent optoelectronic performance**: Achieving high open-circuit voltage and power conversion efficiency without applying an external bias. - **High sensitivity and stability**: Demonstrating the device's diode rectification characteristics in dark conditions and high sensitivity under illumination. In summary, this paper addresses the performance deficiencies of existing infrared detectors by constructing a BP/SWCNT heterojunction, showcasing its application potential in the field of high-performance infrared detection.