Abstract:Asymmetric Schottky and ohmic contacts at the two ends of black phosphorus nanosheets have been fabricated by using Cr and WTe2 electrodes to construct a huge potential barrier for a self‐driven broadband photodetector with a high detectivity of ∼2.3×1011 Jones under zero bias, highlighting a simple and novel strategy for constructing predesigned band structure for further electronic and optoelectronic applications. Self‐driven broadband photodetectors based on two‐dimensional (2D) materials have attracted considerable interest for their outstanding optoelectronic properties. Asymmetric contact induced potential barrier on 2D narrow‐bandgap materials is a feasible scheme for self‐driven broadband photodetectors, but has not been constructed untill now due to the band structure mismatch of the channel and metal electrodes. Herein, a self‐driven broadband photodetector is reported covering from visible to infrared spectrum by well designing the band structure of the Cr/BP/WTe2 heterostructure with asymmetric contact architecture, constructing a huge potential barrier at the two ends of the black phosphorus (BP) channel due to the perfect ohmic and Schottky contacts at the WTe2‐BP and Cr‐BP interfaces, respectively. The as‐fabricated device exhibits responsivity of ∼283 and ∼193 mA/W under 532 and 1550 nm illumination, respectively, under zero bias with corresponding detectivity of ∼2.3×1011 and ∼1.2×1011 Jones. The results demonstrate that the well‐designed band structure can be adopted to construct ideal Schottky and ohmic contact on 2D narrow‐bandgap materials to realize a self‐driven broadband photodetector. These findings highlight a simple and novel strategy for constructing predesigned band structure for further electronic and optoelectronic applications.

In situ grown large-size highly crystalline black phosphorus thin film for self-driven photodetector

Growth of 2D Black Phosphorus Film from Chemical Vapor Deposition.

Black Phosphorus Infrared Photodetectors with Fast Response and High Photoresponsivity

Selenium-Doped Black Phosphorus for High-Responsivity 2d Photodetectors

Synthesis of thin-film black phosphorus on a flexible substrate

Asymmetric Contacts on Narrow‐Bandgap Black Phosphorus for Self‐Driven Broadband Photodetectors

Chalcogenide Glass Waveguide-Integrated Black Phosphorus Mid-Infrared Photodetectors

Black Phosphorus Mid-Infrared Photodetectors with High Gain

Tunable bandgap of black phosphorus by arsenic substitution toward high-performance photodetector

High Performance Near Infrared Photodetector Based on In-Plane Black Phosphorus P-N Homojunction

Highly Efficient and Air-Stable Infrared Photodetector Based on 2D Layered Graphene–Black Phosphorus Heterostructure

Ultra-sensitive polarization-resolved black phosphorus homojunction photodetector defined by ferroelectric domains

Single-detector Black Phosphorus Monolithic Spectrometer with High Spectral and Temporal Resolution

Growth of single-crystal black phosphorus and its alloy films through sustained feedstock release

High yield growth of centimeter-sized black phosphorus single crystal thin flakes through bidirectional vapor transport

A black phosphorus photo-detector for multispectral, high-resolution imaging

Black Phosphorus Radio-Frequency Transistors

Mid-Infrared, Optically Active Black Phosphorus Thin Films on Centimeter Scale

Large-scale growth of few-layer two-dimensional black phosphorus

High-responsivity and high-speed black phosphorus photodetectors integrated with proton exchanged thin-film lithium niobate waveguides

Wet Chemical Method for Black Phosphorus Thinning and Passivation.