Abstract:Large‐area Schottky junction of black phosphorus (BP)/PtSe2 films‐based nano‐devices for high‐performance broadband photodetection from 532 to 2200 nmare fabricated via a depletion‐enhanced photocarrier dynamics strategy. The photodetectors show a state‐of‐the‐art operating temperature up to 470 K with photo‐responsivity and specific detectivity of 25 A W−1 and 6.4 × 1011 Jones under 1850 nm illumination. High operating temperature (HOT) broadband photodetectors are urgently necessary for extreme condition applications in infrared‐guided missiles, infrared night vision, fire safety imaging, and space exploration sensing. However, conventional photodetectors show dramatic carrier mobility decreases and carrier losses with low photoresponsivity at HOT due to the increased carrier scattering in channels at high temperatures. Herein, the HOT broadband photodetectors from room temperature to 470 K are developed for the first time by large‐area black phosphorus (BP)/PtSe2 films device arrays via a depletion‐enhanced photocarrier dynamics strategy. Attributed to the 2D Schottky junction at BP/PtSe2 interface and resulting in full depleted working channels, the BP/PtSe2 photodetector arrays exhibit high tolerance to carrier mobility decrease during the increasing operating temperature in a wide wavelength range from 532 to 2200 nm. Thus, the photodetector shows a state‐of‐the‐art operating temperature at 470 K with the photo‐responsivity (R) and specific detectivity (D*) of 25 A W−1 and 6.4 × 1011 Jones under 1850 nm illumination, respectively. Moreover, BP/PtSe2 photodetector arrays show high‐uniformity photo‐response in a large area. This work provides new strategies for high‐performance broadband photodetector arrays with HOT by Schottky junction of large‐area BP/PtSe2 films.

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