High-Performance Hybrid InP QDs/Black Phosphorus Photodetector.

Mingyu Jeong,Yang-Soo Lee,Jong‐Soo Lee,P. Ramasamy,Dohyun Kwak

DOI: https://doi.org/10.1021/acsami.9b07910

2019-07-19

Abstract:0D-2D hybrid optoelectronic devices have demonstrated high sensitivity and high performance due to high absorption coefficient of 0D materials with a tunable detection range and high carrier transport property of 2D materials. However, the reported 0D-2D hybrid devices employ toxic nanomaterials as sensitizing layers, which can limit the practical applications. In this study, we first fabricated 0D-2D hybrid photodetector using non-toxic InP quantum dots (QDs) as a light-absorbing layer and black phosphorus (BP) as a transport layer. The surface treatment using 1, 2 ethanedithiol (EDT) and thermal treatment were carried out to remove the surface long ligands of colloidal QDs, which can accelerate the charge injection of the photo-generated carriers through the interfaces between InP QDs and BP. The InP QDs/BP hybrid photodetector demonstrates a high responsivity of 1×109 A/W and detectivity of 4.5×1016 Jones at 0.05 μW/cm2 under 405 nm illumination. The results show that 0D-2D hybrid photodetectors based on III-V semiconducting QD materials can be optimized for high-performance photodetectors.

Physics,Engineering,Medicine,Materials Science