Abstract:We report a scalable approach to synthesize a large-area (up to 4 mm) thin black phosphorus (BP) film on a flexible substrate. We first deposited a red phosphorus (RP) thin-film on a flexible polyester substrate, followed by its conversion to BP in a high-pressure multi-anvil cell at room temperature. Raman spectroscopy and transmission electron microscopy measurements confirmed the formation of a nano-crystalline BP thin-film with a thickness of around 40 nm. Optical characterization indicates a bandgap of around 0.28 eV in the converted BP, similar to the bandgap measured in exfoliated thin-films. Thin-film BP transistors exhibit a field-effect mobility of around 0.5 cm2/Vs, which can probably be further enhanced by the optimization of the conversion process at elevated temperatures. Our work opens the avenue for the future demonstration of large-scale, high quality thin-film black phosphorus.

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to develop a scalable method for synthesizing large - area black phosphorus (BP) thin films on flexible substrates. Specifically, the researchers aim to achieve this goal by depositing red phosphorus (RP) thin films on flexible substrates and converting them into black phosphorus thin films at room temperature through a high - pressure multi - anvil device. ### Main problems and background 1. **Preparation of large - area black phosphorus thin films**: - Black phosphorus has become an ideal material for nanoelectronics and nanophotonics applications due to its high mobility, tunable electronic bandgap, and anisotropic properties. - However, the existing micromechanical exfoliation methods can only produce small - area black phosphorus thin films, which are difficult to meet the needs of large - scale production. 2. **Synthesis on flexible substrates**: - Directly growing high - quality black phosphorus thin films on flexible substrates is of great significance for the future development of flexible electronics and optoelectronic devices. ### Solutions - **Deposition of red phosphorus thin films**: First, deposit red phosphorus thin films on flexible polyethylene terephthalate (PET) substrates by thermal evaporation. - **High - pressure conversion**: Place the PET substrates with deposited red phosphorus thin films in a high - pressure multi - anvil device and apply a pressure exceeding 8 GPa at room temperature to convert red phosphorus into black phosphorus. - **Characterization and performance testing**: Confirm the quality and properties of the generated black phosphorus thin films by means of Raman spectroscopy, transmission electron microscopy (TEM), optical characterization, etc., and test their field - effect transistor (FET) performance. ### Key achievements - Successfully synthesized black phosphorus thin films with a thickness of about 40 nm and a diameter of up to 4 mm. - Optical characterization shows that the converted black phosphorus thin films have a bandgap of about 0.28 eV, which is close to the measured value of exfoliated flakes. - The preliminarily prepared black phosphorus thin - film transistors exhibit a field - effect mobility of about 0.5 cm²/Vs, and the performance is expected to be further improved in the future by optimizing the conversion process. Through this method, the researchers have paved the way for the large - scale and high - quality preparation of black phosphorus thin films and promoted the development of flexible electronic devices.

Synthesis of thin-film black phosphorus on a flexible substrate

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