Abstract:Two-dimensional layered materials (2DLMs) are of considerable interest for high-performance electronic devices for their unique electronic properties and atomically thin geometry. However, the atomically thin geometry makes their electronic properties highly susceptible to the environment changes. In particular, some 2DLMs (e.g., black phosphorus (BP) and SnSe2) are unstable and could rapidly degrade over time when exposed to ambient conditions. Therefore, the development of proper passivation schemes that can preserve the intrinsic properties and enhance their lifetime represents a key challenge for these atomically thin electronic materials. Herein we introduce a simple, nondisruptive, and scalable van der Waals passivation approach by using organic thin films to simultaneously improve the performance and air stability of BP field-effect transistors (FETs). We show that dioctylbenzothienobenzothiophene (C8-BTBT) thin films can be readily deposited on BP via van der Waals epitaxy approach to protect BP against oxidation in ambient conditions over 20 d. Importantly, the noncovalent van der Waals interface between C8-BTBT and BP effectively preserves the intrinsic properties of BP, allowing us to demonstrate high-performance BP FETs with a record-high current density of 920 μA/um, hole drift velocity over 1 × 107 cm/s, and on/off ratio of 1 × 104 to ∼1 × 107 at room temperature. This approach is generally applicable to other unstable two-dimensional materials, defining a unique pathway to modulate their electronic properties and realize high-performance devices through hybrid heterojunctions.

Plasma-Treated Thickness-Controlled Two-Dimensional Black Phosphorus and Its Electronic Transport Properties

Growth of 2D Black Phosphorus Film from Chemical Vapor Deposition.

Black Phosphorus Radio-Frequency Transistors

Wet Chemical Method for Black Phosphorus Thinning and Passivation.

High-Performance Black Phosphorus Field-Effect Transistors with Long-Term Air Stability.

In situ observation of electrical property of thin-layer black phosphorus based on dry transfer method

Study on Black Phosphorus Characteristics Using a Two-Step Thinning Method

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Synthesis of thin-film black phosphorus on a flexible substrate

Metal‐Ion‐Modified Black Phosphorus with Enhanced Stability and Transistor Performance

Protecting black phosphorus with selectively adsorbed graphene quantum dot layers

Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering

Surface passivation of black phosphorus via van der Waals stacked PTCDA

Large-scale growth of few-layer two-dimensional black phosphorus

Enhanced Stability of Black Phosphorus Field‐Effect Transistors Via Hydrogen Treatment

Toward Air-Stable Multilayer Phosphorene Thin-Films and Transistors

Black Phosphorus Field-Effect Transistors with Improved Contact via Localized Joule Heating

Performance Change of Few Layer Black Phosphorus Transistors in Ambient

Surface Chemistry of Black Phosphorus under a Controlled Oxidative Environment

Enhanced Stability of Black Phosphorus Field-Effect Transistors with Sio2 Passivation

Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation