Abstract:Two-dimensional layered materials (2DLMs) are of considerable interest for high-performance electronic devices for their unique electronic properties and atomically thin geometry. However, the atomically thin geometry makes their electronic properties highly susceptible to the environment changes. In particular, some 2DLMs (e.g., black phosphorus (BP) and SnSe2) are unstable and could rapidly degrade over time when exposed to ambient conditions. Therefore, the development of proper passivation schemes that can preserve the intrinsic properties and enhance their lifetime represents a key challenge for these atomically thin electronic materials. Herein we introduce a simple, nondisruptive, and scalable van der Waals passivation approach by using organic thin films to simultaneously improve the performance and air stability of BP field-effect transistors (FETs). We show that dioctylbenzothienobenzothiophene (C8-BTBT) thin films can be readily deposited on BP via van der Waals epitaxy approach to protect BP against oxidation in ambient conditions over 20 d. Importantly, the noncovalent van der Waals interface between C8-BTBT and BP effectively preserves the intrinsic properties of BP, allowing us to demonstrate high-performance BP FETs with a record-high current density of 920 μA/um, hole drift velocity over 1 × 107 cm/s, and on/off ratio of 1 × 104 to ∼1 × 107 at room temperature. This approach is generally applicable to other unstable two-dimensional materials, defining a unique pathway to modulate their electronic properties and realize high-performance devices through hybrid heterojunctions.

Toward Air-Stable Multilayer Phosphorene Thin-Films and Transistors

Growth of 2D Black Phosphorus Film from Chemical Vapor Deposition.

Protecting black phosphorus with selectively adsorbed graphene quantum dot layers

High-Performance Black Phosphorus Field-Effect Transistors with Long-Term Air Stability.

Wet Chemical Method for Black Phosphorus Thinning and Passivation.

Black phosphorus field effect transistors stable in harsh conditions via surface engineering

Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering

Black Phosphorus Rediscovered: From Bulk Material to Monolayers

Black Phosphorus Radio-Frequency Transistors

Environmental instability of few-layer black phosphorus

Surface Chemistry of Black Phosphorus under a Controlled Oxidative Environment

Enhanced Stability of Black Phosphorus Field‐Effect Transistors Via Hydrogen Treatment

Supramolecular networks stabilise and functionalise black phosphorus

2D Phosphorene: Epitaxial Growth and Interface Engineering for Electronic Devices

Fabrication and Imaging of Monolayer Phosphorene with Preferred Edge Configurations via Graphene-Assisted Layer-by-Layer Thinning

Synthesis and stabilization of black phosphorus and phosphorene: recent progress and perspectives

Large-scale growth of few-layer two-dimensional black phosphorus

Rediscovering Black Phosphorus: A Unique Anisotropic 2D Material for Optoelectronics and Electronics

Band-edge Engineering Via Molecule Intercalation: a New Strategy to Improve Stability of Few-Layer Black Phosphorus

Robust Amphiphobic Few-Layer Black Phosphorus Nanosheet with Improved Stability

Identification of Lattice Oxygen in Few-Layer Black Phosphorous Exfoliated in Ultrahigh Vacuum and Largely Improved Ambipolar Field-Effect Mobilities by Hydrogenation and Phosphorization