Abstract:Unencapsulated, exfoliated black phosphorus (BP) flakes are found to chemically degrade upon exposure to ambient conditions. Atomic force microscopy, electrostatic force microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy are employed to characterize the structure and chemistry of the degradation process, suggesting that O2 saturated H2O irreversibly reacts with BP to form oxidized phosphorus species. This interpretation is further supported by the observation that BP degradation occurs more rapidly on hydrophobic octadecyltrichlorosilane self-assembled monolayers and on H-Si(111), versus hydrophilic SiO2. For unencapsulated BP field-effect transistors, the ambient degradation causes large increases in threshold voltage after 6 hours in ambient, followed by a ~10^3 decrease in FET current on/off ratio and mobility after 48 hours. Atomic layer deposited AlOx overlayers effectively suppress ambient degradation, allowing encapsulated BP FETs to maintain high on/off ratios of ~10^3 and mobilities of ~100 cm2/(V*s) for over two weeks in ambient. This work shows that the ambient degradation of BP can be managed effectively when the flakes are sufficiently passivated. In turn, our strategy for enhancing BP environmental stability will accelerate efforts to implement BP in electronic and optoelectronic applications.

What problem does this paper attempt to address?

This paper attempts to solve the problem of rapid degradation of black phosphorus (BP) under environmental conditions. Specifically, unencapsulated, mechanically exfoliated black phosphorus flakes will chemically degrade when exposed to environmental conditions, resulting in a sharp decline in their performance. The authors studied this degradation process through a variety of characterization methods (such as atomic force microscopy, electrostatic force microscopy, transmission electron microscopy, X - ray photoelectron spectroscopy, and Fourier - transform infrared spectroscopy, etc.), and found that water and oxygen are the main causes of black phosphorus degradation. ### Main problems: 1. **Environmental stability problem of black phosphorus**: Black phosphorus will rapidly react with water and oxygen when exposed to the environment, forming phosphorus oxide species, leading to significant changes in the material structure and properties. 2. **Performance degradation of black phosphorus field - effect transistors (FETs)**: Due to the degradation of black phosphorus, the threshold voltage of unencapsulated black phosphorus FETs increases significantly, and the current on - off ratio and carrier mobility decrease significantly after being exposed to the environment, affecting their application potential as electronic devices. ### Solutions: The authors proposed an effective passivation method - using atomic layer deposition (ALD) technology to deposit a layer of aluminum oxide (AlO_x) film to encapsulate black phosphorus flakes and their FET devices. The experimental results show that this encapsulation method can effectively inhibit the degradation of black phosphorus in the environment, enabling the encapsulated black phosphorus FETs to maintain a relatively high current on - off ratio (~10^3) and carrier mobility (~100 cm²V⁻¹s⁻¹) for more than two weeks. ### Key conclusions: - Black phosphorus will rapidly degrade when exposed to the environment, especially on hydrophobic substrates (such as OTS/SiO₂), with a faster degradation rate. - Oxygen - saturated water (H₂O) undergoes an irreversible reaction with black phosphorus to form phosphorus oxide species, resulting in a decline in material performance. - The AlO_x film deposited by ALD technology can effectively passivate black phosphorus, preventing it from contacting with moisture and oxygen in the environment, thereby significantly improving the environmental stability and long - term performance of black phosphorus FETs. Through these studies, the authors provide a feasible solution for the practical application of black phosphorus in future electronic and optoelectronic applications.

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