Abstract:Two-dimensional layered materials (2DLMs) are of considerable interest for high-performance electronic devices for their unique electronic properties and atomically thin geometry. However, the atomically thin geometry makes their electronic properties highly susceptible to the environment changes. In particular, some 2DLMs (e.g., black phosphorus (BP) and SnSe2) are unstable and could rapidly degrade over time when exposed to ambient conditions. Therefore, the development of proper passivation schemes that can preserve the intrinsic properties and enhance their lifetime represents a key challenge for these atomically thin electronic materials. Herein we introduce a simple, nondisruptive, and scalable van der Waals passivation approach by using organic thin films to simultaneously improve the performance and air stability of BP field-effect transistors (FETs). We show that dioctylbenzothienobenzothiophene (C8-BTBT) thin films can be readily deposited on BP via van der Waals epitaxy approach to protect BP against oxidation in ambient conditions over 20 d. Importantly, the noncovalent van der Waals interface between C8-BTBT and BP effectively preserves the intrinsic properties of BP, allowing us to demonstrate high-performance BP FETs with a record-high current density of 920 μA/um, hole drift velocity over 1 × 107 cm/s, and on/off ratio of 1 × 104 to ∼1 × 107 at room temperature. This approach is generally applicable to other unstable two-dimensional materials, defining a unique pathway to modulate their electronic properties and realize high-performance devices through hybrid heterojunctions.

HfO2-passivated Black Phosphorus Field Effect Transistor with Long-Termed Stability and Enhanced Current On/off Ratio

Enhanced Stability of Black Phosphorus Field-Effect Transistors with Sio2 Passivation

Performance Change of Few Layer Black Phosphorus Transistors in Ambient

Black phosphorus field effect transistors stable in harsh conditions via surface engineering

Enhanced Stability of Black Phosphorus Field‐Effect Transistors Via Hydrogen Treatment

High-Performance Black Phosphorus Field-Effect Transistors with Long-Term Air Stability.

Effective Passivation of Black Phosphorus Transistor Against Ambient Degradation by an Ultra-Thin Tin Oxide Film.

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Black Phosphorus Radio-Frequency Transistors

High field transport of high performance black phosphorus transistors

High Performance Transistors Based On Two Dimensional Materials

Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering

Metal‐Ion‐Modified Black Phosphorus with Enhanced Stability and Transistor Performance

Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation

Temperature-Stable Black Phosphorus Field-Effect Transistors Through Effective Phonon Scattering Suppression On Atomic Layer Deposited Aluminum Nitride

Effects of Al2O3 Capping and Post-Annealing on the Conduction Behavior in Few-Layer Black Phosphorus Field-Effect Transistors

Developments in stability and passivation strategies for black phosphorus

Performance Improvement in Hydrogenated Few-Layer Black Phosphorus Field-Effect Transistors

Wet Chemical Method for Black Phosphorus Thinning and Passivation.

Surface Charge Transfer Doping and Effective Passivation of Black Phosphorus Field Effect Transistors

Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs with HfO2 Gate Dielectrics