Surface Charge Transfer Doping and Effective Passivation of Black Phosphorus Field Effect Transistors

Boran Xing,Ying Yu,Jiadong Yao,Xinyue Niu,Xiaoyuan Yan,Yali Liu,Xiaoxiang Wu,Mengge Li,Wenxuan Guo,Jian Sha,Yewu Wang

DOI: https://doi.org/10.1039/d0tc00740d

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:A metal oxide/h-BN/BP structure was built to realize electron doping and air stability for BPFETs.

What problem does this paper attempt to address?

Effective Passivation of Black Phosphorus Transistor Against Ambient Degradation by an Ultra-Thin Tin Oxide Film.

Dianzhong Wu,Zhijian Peng,Chuanhong Jin,Zhiyong Zhang

DOI: https://doi.org/10.1016/j.scib.2019.04.021

IF: 18.9

2019-01-01

Science Bulletin

Abstract:(C) 2019 Science China Press. Published by Elsevier B.V. and Science China Press. All rights reserved.
Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling

Yuchen Du,Han Liu,Yexin Deng,Peide D Ye

DOI: https://doi.org/10.1021/nn502553m

IF: 17.1

2014-10-28

ACS Nano

Abstract:Although monolayer black phosphorus (BP), or phosphorene, has been successfully exfoliated and its optical properties have been explored, most of the electrical performance of the devices is demonstrated on few-layer phosphorene and ultrathin BP films. In this paper, we study the channel length scaling of ultrathin BP field-effect transistors (FETs) and discuss a scheme for using various contact metals to change the transistor characteristics. Through studying transistor behaviors with various channel lengths, the contact resistance can be extracted with the transfer length method (TLM). With different contact metals, we find out that the metal/BP interface has different Schottky barrier heights, leading to a significant difference in contact resistance, which is quite different from previous studies of transition metal dichalcogenides (TMDs), such as MoS2, where the Fermi level is strongly pinned near the conduction band edge at the metal/MoS2 interface. The nature of BP transistors is Schottky barrier FETs, where the on and off states are controlled by tuning the Schottky barriers at the two contacts. We also observe the ambipolar characteristics of BP transistors with enhanced n-type drain current and demonstrate that the p-type carriers can be easily shifted to n-type or vice versa by controlling the gate bias and drain bias, showing the potential to realize BP CMOS logic circuits.
Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling

Yuchen Du,Han Liu,Yexin Deng,Peide D. Ye

DOI: https://doi.org/10.48550/arXiv.1408.4206

2014-08-19

Materials Science

Abstract:Although monolayer black phosphorus (BP) or phosphorene has been successfully exfoliated and its optical properties have been explored, most of electrical performance of the devices is demonstrated on few-layer phosphorene and ultra-thin BP films. In this paper, we study the channel length scaling of ultra-thin BP field-effect transistors (FETs), and discuss a scheme for using various contact metals to change transistor characteristics. Through studying transistor behaviors with various channel lengths, the contact resistance can be extracted from the transfer length method (TLM). With different contact metals, we find out that the metal/BP interface has different Schottky barrier heights, leading to a significant difference in contact resistance, which is quite different from previous studies of transition metal dichalcogenides (TMDs) such as MoS2 where Fermi-level is strongly pinned near conduction band edge at metal/MoS2 interface. The nature of BP transistors are Schottky barrier FETs, where the on and off states are controlled by tuning the Schottky barriers at the two contacts. We also observe the ambipolar characteristics of BP transistors with enhanced n-type drain current and demonstrate that the p-type carriers can be easily shifted to n-type or vice versus by controlling the gate bias and drain bias, showing the potential to realize BP CMOS logic circuits.
Enhanced Stability of Black Phosphorus Field-Effect Transistors with Sio2 Passivation

Bensong Wan,Bingchao Yang,Yue Wang,Junying Zhang,Zhongming Zeng,Zhongyuan Liu,Wenhong Wang

DOI: https://doi.org/10.1088/0957-4484/26/43/435702

IF: 3.5

2015-01-01

Nanotechnology

Abstract:Few-layer black phosphorus (BP) has attracted much attention due to its high mobility and suitable band gap for potential applic5ations in optoelectronics and flexible devices. However, its instability under ambient conditions limits its practical applications. Our investigations indicate that by passivation of the mechanically exfoliated BP flakes with a SiO2 layer, the fabricated BP field-effect transistors (FETs) exhibit greatly enhanced environmental stability. Compared to the unpassivated BP devices, which show a fast drop of on/off current ratio by a factor of 10 after one week of ambient exposure, the SiO2-passivated BP devices display a high retained on/off current ratio of over 600 after one week of exposure, just a little lower than the initial value of 810. Our investigations provide an effective route to passivate the few-layer BPs for enhancement of their environmental stability.
Metal‐Ion‐Modified Black Phosphorus with Enhanced Stability and Transistor Performance

Zhinan Guo,Si Chen,Zhongzheng Wang,Zhenyu Yang,Fei Liu,Yanhua Xu,Jiahong Wang,Ya Yi,Han Zhang,Lei Liao,Paul K. Chu,Xue-Feng Yu

DOI: https://doi.org/10.1002/adma.201703811

IF: 29.4

2017-01-01

Advanced Materials

Abstract:Black phosphorus (BP), a burgeoning elemental 2D semiconductor, has aroused increasing scientific and technological interest, especially as a channel material in field-effect transistors (FETs). However, the intrinsic instability of BP causes practical concern and the transistor performance must also be improved. Here, the use of metal-ion modification to enhance both the stability and transistor performance of BP sheets is described. Ag+ spontaneously adsorbed on the BP surface via cation-π interactions passivates the lone-pair electrons of P thereby rendering BP more stable in air. Consequently, the Ag+ -modified BP FET shows greatly enhanced hole mobility from 796 to 1666 cm2 V-1 s-1 and ON/OFF ratio from 5.9 × 104 to 2.6 × 106 . The mechanisms pertaining to the enhanced stability and transistor performance are discussed and the strategy can be extended to other metal ions such as Fe3+ , Mg2+ , and Hg2+ . Such stable and high-performance BP transistors are crucial to electronic and optoelectronic devices. The stability and semiconducting properties of BP sheets can be enhanced tremendously by this novel strategy.
Te-Doped Black Phosphorus Field-Effect Transistors

Bingchao Yang,Bensong Wan,Qionghua Zhou,Yue Wang,Wentao Hu,Weiming Lv,Qian Chen,Zhongming Zeng,Fusheng Wen,Jianyong Xiang,Shijun Yuan,Jinlan Wang,Baoshun Zhang,Wenhong Wang,Junying Zhang,Bo Xu,Zhisheng Zhao,Yongjun Tian,Zhongyuan Liu

DOI: https://doi.org/10.1002/adma.201603723

IF: 29.4

2016-01-01

Advanced Materials

Abstract:Element doping allows manipulation of the electronic properties of 2D materials. Enhanced transport performances and ambient stability of black-phosphorus devices by Te doping are presented. This provides a facile route for achieving airstable black-phosphorus devices.
Black phosphorus field effect transistors stable in harsh conditions via surface engineering

Bei Jiang,Hao Huang,Rui Chen,Guoli Li,Denis Flandre,Da Wan,Xue Chen,Xingqiang Liu,Cong Ye,Lei Liao

DOI: https://doi.org/10.1063/5.0021335

IF: 4

2020-09-14

Applied Physics Letters

Abstract:Black phosphorus (BP) has potential for fabricating p-type transistors in ultra-thin 2D-material complementary circuits. However, as the synergetic effect of water and oxygen leads to performance degradation under an ambient atmosphere, it is urgent to develop a passivation strategy for robust stability. Herein, a scalable superhydrophobic passivation layer is designed to improve the stability of BP transistors, which consists of fluoroalkylsilane-coated titanium dioxide (TiO2) nanoparticles. Due to the superhydrophobic property of the passivation layer, the BP transistors preserve intrinsic performance in extremely wet conditions, including humid air, water, HCl, and KOH. After 28 days in atmospheric conditions, the performance presents only 20% channel current degradation and the device can work even after 60 days. This work not only experimentally demonstrates robust stable BP transistors in harsh conditions but also provides a highly efficient and damage-free strategy to suppress the influence of water adsorption in atmospheric conditions for highly stable 2D materials devices.

physics, applied
Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering

Xuefei Li,Jingyi Wu,Yunsheng Ye,Shengman Li,Tiaoyang Li,Xiong Xiong,Xiaole Xu,Tingting Gao,Xiaolin Xie,Yanqing Wu

DOI: https://doi.org/10.1021/acsami.8b16507

2019-01-09

Abstract:Few-layer black phosphorus (BP) has recently emerged as a promising two-dimensional (2D) material for electronic and optoelectronic devices because of its high mobility and tunable band gap. However, BP is known to quickly degrade and oxidize in ambient conditions by breaking of the P-P bonds. As a result, there is a growing need to encapsulate BP that avoids oxygen and water while retaining the high electric performance of the devices. Here, we demonstrate a hydrophobic polymer encapsulation technique with improved thermal conductivity for high current density, which preserves the electrical properties of BP back-gate transistors compared to the commonly used Al2O3 encapsulation with improved mobility and minimal traps. The on-off ratio increases by more than an order of magnitude at room temperature and more than 4 orders of magnitude at cryogenic temperatures. High field transport shows the first systematic study on unprecedented breakdown characteristics up to -5.5 V for the 0.16 μm transistors with a high current of 1.2 mA/μm at 20 K. These discoveries open up a new way to achieve high-performance 2D semiconductors with significantly improved breakdown voltage, on-off ratios, and stability under ambient conditions for practical applications in electronic and optoelectronic devices.
High-Performance Black Phosphorus Field-Effect Transistors with Long-Term Air Stability.

Daowei He,Yiliu Wang,Yu Huang,Yi Shi,Xinran Wang,Xiangfeng Duan

DOI: https://doi.org/10.1021/acs.nanolett.8b03940

IF: 10.8

2018-01-01

Nano Letters

Abstract:Two-dimensional layered materials (2DLMs) are of considerable interest for high-performance electronic devices for their unique electronic properties and atomically thin geometry. However, the atomically thin geometry makes their electronic properties highly susceptible to the environment changes. In particular, some 2DLMs (e.g., black phosphorus (BP) and SnSe2) are unstable and could rapidly degrade over time when exposed to ambient conditions. Therefore, the development of proper passivation schemes that can preserve the intrinsic properties and enhance their lifetime represents a key challenge for these atomically thin electronic materials. Herein we introduce a simple, nondisruptive, and scalable van der Waals passivation approach by using organic thin films to simultaneously improve the performance and air stability of BP field-effect transistors (FETs). We show that dioctylbenzothienobenzothiophene (C8-BTBT) thin films can be readily deposited on BP via van der Waals epitaxy approach to protect BP against oxidation in ambient conditions over 20 d. Importantly, the noncovalent van der Waals interface between C8-BTBT and BP effectively preserves the intrinsic properties of BP, allowing us to demonstrate high-performance BP FETs with a record-high current density of 920 μA/um, hole drift velocity over 1 × 107 cm/s, and on/off ratio of 1 × 104 to ∼1 × 107 at room temperature. This approach is generally applicable to other unstable two-dimensional materials, defining a unique pathway to modulate their electronic properties and realize high-performance devices through hybrid heterojunctions.
Surface and interface control of black phosphorus

Li Zeng,Xue Zhang,Yanna Liu,Xiaoxi Yang,Jiahong Wang,Qian Liu,Qian Luo,Chuanyong Jing,Xue-Feng Yu,Guangbo Qu,Paul K. Chu,Guibin Jiang

DOI: https://doi.org/10.1016/j.chempr.2021.11.022

IF: 23.5

2022-03-01

Chem

Abstract:Black phosphorus (BP), a burgeoning class of two-dimensional semiconductors, possesses favorable properties such as large specific surface area, high charge carrier mobility, and thickness-dependent bandgap. In particular, the lone pair electrons of phosphorus atoms are highly reactive, and the structural anisotropy leads to many unique anisotropic physicochemical properties. The electronic structure and properties of BP are sensitive to external fields. In this respect, the surface and interface of BP can be modulated to adjust the optical, mechanical, magnetic, and electrical properties, but the relationship between the surface/interface structure and properties must be well understood to optimize one or more of these properties. In this review, recent progress pertaining to surface and interface control of BP is described. The topics include: (1) intrinsic characteristics of the BP surface and interfaces, (2) strategies to tailor and optimize the BP surface and interface, and (3) challenge and prospective.

chemistry, multidisciplinary
Surface passivation of black phosphorus via van der Waals stacked PTCDA

Rui Guo,Yue Zheng,Zhirui Ma,Xu Lian,Haicheng Sun,Cheng Han,Honghe Ding,Qian Xu,Xiaojiang Yu,Junfa Zhu,Wei Chen

DOI: https://doi.org/10.1016/j.apsusc.2019.143688

IF: 6.7

2019-01-01

Applied Surface Science

Abstract:Two-dimensional (2D) black phosphorus (BP) has received great attention due to its anisotropic mechanical, optical and electronic properties. However, the air-instability of BP seriously limits its further applications. Various approaches have been explored to improve the device stability of BP, including the encapsulation by inert 2D counterparts, and surface passivation by AlOx via atomic layer deposition and by organic layers either van der Waals stacked or covalently bonded onto the surface. Here we systematically investigate the surface passivation effect of perylenetetracarboxylic dianhydride (PTCDA) on BP through a variety of in-situ characterization techniques. PTCDA molecule on BP adopts a lying down configuration with the molecular π-plane almost parallel to the BP surface, arising from the formation of multiple intermolecular hydrogen bonds. The evaporation of PTCDA on BP does not modify the intrinsic structure and electrical transport property of BP, as revealed by in-situ ultraviolet photoelectron spectroscopy (UPS)/x-ray photoelectron spectroscopy (XPS), and further corroborated by in-situ field-effect-transistor (FET) evaluation. After the air-exposure of PTCDA covered BP in dark, no obvious degradation on BP was observed by XPS. However, the electron mobility of the passivated BP FET significantly decreased by 80% after 20 h exposure despite lifetime of the passivated device was prolonged.
Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Bo Zheng,Naichao Si,Guoxin Xie,Quan Wang

DOI: https://doi.org/10.1016/j.physleta.2016.12.046

IF: 2.707

2017-01-01

Physics Letters A

Abstract:Black phosphorus has recently appeared as a promising two-dimensional material for applications in high performance nanoelectronics. Its single- and few-atomic layer forms in field-effect transistors have attracted a lot of attention due to the tunable bandgap (0.3-2.0 eV), high carrier mobility (1000 cm(2) V-1 s(-1)) and decent on-off ratios (10(5)). Here, we demonstrate a suspended black phosphorus field effect transistor (BP-FET) and utilize Raman spectroscope to characterize the strain on the effects of Raman phonon. We find that red shifts appear in all the three vibrational modes (A(g)(i), B-2g and A(g)(2) in different degrees. Among them, 14 mode is most sensitive to the tensile strain. We further investigate the electronic properties with a Cascade semi-automatic probe station. The linear relationships in the output curves indicate the contacts between black phosphorus and electrodes are ohmic contacts. The transfer characteristic curves declare the drain current modulation is similar to 7.6 x 10(3) for the hole conduction and similar to 57 for the electron conduction. Mobility of this device is found to be 347.5 cm(2) V-1 s(-1) and 4.9 cm(2) V-1 s(-1) for the hole and electron conduction, respectively. These results provide a theoretical basis for the coordination of high-performance black phosphorus electronic components. (C) 2016 Elsevier B.V. All rights reserved.
Surface Functionalization of Black Phosphorus Via Potassium Toward High-Performance Complementary Devices.

Cheng Han,Zehua Hu,Lidia C. Gomes,Yang Bao,Alexandra Carvalho,Sherman J. R. Tan,Bo Lei,Du Xiang,Jing Wu,Dianyu Qi,Li Wang,Fengwei Huo,Wei Huang,Kian Ping Loh,Wei Chen

DOI: https://doi.org/10.1021/acs.nanolett.7b00903

IF: 10.8

2017-01-01

Nano Letters

Abstract:Two-dimensional black phosphorus configured field-effect transistor devices generally show a hole-dominated ambipolar transport characteristic, thereby limiting its applications in complementary electronics. Herein, we demonstrate an effective surface functionalization scheme on few-layer black phosphorus, through in situ surface modification with potassium, with a view toward high performance complementary device applications. Potassium induces a giant electron doping effect on black phosphorus along with a clear bandgap reduction, which is further corroborated by in situ photoelectron spectroscopy characterizations. The electron mobility of black phosphorus is significantly enhanced to 262 (377) cm2 V-1 s-1 by over 1 order of magnitude after potassium modification for two-terminal (four-terminal) measurements. Using lithography technique, a spatially controlled potassium doping technique is developed to establish high-performance complementary devices on a single black phosphorus nanosheet, for example, the p-n homojunction-based diode achieves a near-unity ideality factor of 1.007 with an on/off ratio of ∼104. Our findings coupled with the tunable nature of in situ modification scheme enable black phosphorus as a promising candidate for further complementary electronics.
Optimized Transport Properties in Lithium Doped Black Phosphorus Transistors

Tingting Gao,Xuefei Li,Xiong,Mingqiang Huang,Tiaoyang Li,Yanqing Wu

DOI: https://doi.org/10.1109/led.2018.2820841

IF: 4.8157

2018-01-01

IEEE Electron Device Letters

Abstract:Achieving low contact resistance is one of the main challenges for black phosphorus (BP) transistors for both electronic and optoelectronic applications. Here we demonstrate a novel yet feasible lithium doping technique, which greatly reduces the contact resistance from 2 to 0.85 k Omega center dot mu m and results in more than 2.5 times improvement in output current and ON/OFF ratio. This can be mainly attributed to the high hole doping density by lithium bis(trifluoromethylsulfonyl)-imide, which results in a narrower carrier injection barrier at the source end. The ON/OFF ratios of BP field-effect transistors with contact doping at 300 and 20 K are 432 and 7.2x10(5), respectively. A high drain current of 773 mu A/mu m with a 0.56 mu m channel length at 20 K is also demonstrated. The doping technique provides a valid way to improve the overall performance of BP transistors.
Solution-Based Property Tuning of Black Phosphorus

Shuangqing Fan,Wanfu Shen,Jun Liu,Haicheng Hei,Ruixue Hu,Chunguang Hu,Daihua Zhang,Xiaodong Hu,Dong Sun,Jian-Hao Chen,Wei Ji,Jing Liu

DOI: https://doi.org/10.1021/acsami.8b14887

IF: 9.5

2018-01-01

ACS Applied Materials & Interfaces

Abstract:The air instability of black phosphorus (BP) severely hinders the development of its electronic and optoelectronic applications. Although a lot of effort has been made to passivate it against degradation in ambient conditions, approaches to further manipulate the properties of passivated BP are still very limited. Herein, we report a simple and low-cost chemical method that can achieve BP passivation and property tailoring simultaneously. The method is conducted by immersing a BP sample in the solution containing both 2,2,6,6-tetramethylpiperidinyl-N-oxyl (TEMPO) and triphenylcarbenium tetrafluorobor in a mixture of water and acetone (v/v = 1:1). After the treatment, the BP sample is functionalized with TEMPO, which not only efficiently passivates BP but also p-dopes BP to a degenerated density level of 10(13) cm(-2). The performance of the BP field effect transistor is improved after functionalization with a high I-on/I-off ratio of 10(6) and carrier mobility of 881.5 cm(2)/(V.s). The functionalization-induced doping also significantly reduces the contact resistance between BP and the Cr/Au electrode to 0.97 k Omega.mu m. Additionally, we observe a great reduction of BP electrical and optical anisotropies after functionalization. This chemical functionalization method provides a viable route to simultaneously passivate and tune the properties of BP.
Black Phosphorus Field-Effect Transistors with Improved Contact via Localized Joule Heating

Fangyuan Shi,Shengguang Gao,Qichao Li,Yanming Zhang,Teng Zhang,Zhiyan He,Kunchan Wang,Xiaowo Ye,Jichao Liu,Shenghao Jiang,Changxin Chen

DOI: https://doi.org/10.3390/nano13182607

IF: 5.3

2023-09-21

Nanomaterials

Abstract:Two-dimensional (2D) black phosphorus (BP) is considered an ideal building block for field-effect transistors (FETs) owing to its unique structure and intriguing properties. To achieve high-performance BP-FETs, it is essential to establish a reliable and low-resistance contact between the BP and the electrodes. In this study, we employed a localized Joule heating method to improve the contact between the 2D BP and gold electrodes, resulting in enhanced BP-FET performance. Upon applying a sufficiently large source–drain voltage, the zero-bias conductance of the device increased by approximately five orders of magnitude, and the linearity of the current–voltage curves was also enhanced. This contact improvement can be attributed to the formation of gold phosphide at the interface of the BP and the gold electrodes owing to current-generated localized Joule heat. The fabricated BP-FET demonstrated a high on/off ratio of 4850 and an on-state conductance per unit channel width of 1.25 μS μm−1, significantly surpassing those of the BP-FETs without electrical annealing. These findings offer a method to achieve a low-resistance BP/metal contact for developing high-performance BP-based electronic devices.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Atomistic simulations of hetero-junction tunneling field-effect transistors with layered black phosphorus

Fei Liu,Jian Wang,Hong Guo

DOI: https://doi.org/10.1109/SNW.2016.7578047

2016-01-01

Abstract:We investigated the ballistic transport characteristics of black phosphorus tunneling transistors using BP hetero-junction with thicker BP film at the source-channel interface. With the reduced tunneling barrier width on-current can be increased over 6 orders in 1L-2L-1L ZD BP heterogeneous TFETs compared with 1L BP homogenous TFETs at the same I ON /I OFF ratio. I ON can be further enhanced by using 2L and 3L BP in source. It is also found that device performance of BP He-TFETs greatly depends on transport direction, and I ON or I ON /I OFF ratio can not be improved in BP He-TFETs in armchair direction without edge passivation due to interface states.
Black Phosphorus Field-Effect Transistors with Work Function Tunable Contacts.

Yuqiang Ma,Chenfei Shen,Anyi Zhang,Liang Chen,Yihang Liu,Jihan Chen,Qingzhou Liu,Zhen Li,Moh R Amer,Tom Nilges,Ahmad N Abbas,Chongwu Zhou

DOI: https://doi.org/10.1021/acsnano.7b02858

IF: 17.1

2017-01-01

ACS Nano

Abstract:Black phosphorus (BP) has been recently rediscovered as an elemental two-dimensional (2D) material that shows promising results for next generation electronics and optoelectronics because of its intrinsically superior carrier mobility and small direct band gap. In various 2D field-effect transistors (FETs), the choice of metal contacts is vital to the device performance, and it is a major challenge to reach ultralow contact resistances for highly scaled 2D FETs. Here, we experimentally show the effect of a work function tunable metal contact on the device performance of BP FETs. Using palladium (Pd) as the contact material, we employed the reaction between Pd and H2 to form a Pd-H alloy that effectively increased the work function of Pd and reduced the Schottky barrier height (ΦB) in a BP FET. When the Pd-contacted BP FET was exposed to 5% hydrogen concentrated Ar, the contact resistance (Rc) improved between the Pd electrodes and BP from ∼7.10 to ∼1.05 Ω·mm, surpassing all previously reported contact resistances in the literature for BP FETs. Additionally, with exposure to 5% hydrogen, the transconductance of the Pd-contacted BP FET was doubled. The results shown in this study illustrate the significance of choosing the right contact material for high-performance BP FETs in order to realize the real prospect of BP in electronic applications.
Wet Chemical Method for Black Phosphorus Thinning and Passivation.

Shuangqing Fan,JingSi Qiao,Jiawei Lai,Haicheng Hei,Zhihong Feng,Qiankun Zhang,Daihua Zhang,Sen Wu,Xiaodong Hu,Dong Sun,Wei Ji,Jing Liu

DOI: https://doi.org/10.1021/acsami.8b21655

IF: 9.5

2019-01-01

ACS Applied Materials & Interfaces

Abstract:Layered black phosphorus (BP) has been expected to be a promising material for future electronic and optoelectronic applications since its discovery. However, the difficulty in mass fabricating layered air-stable BP severely obstructs its potential industry applications. Here, we report a new BP chemical modification method to implement all-solution-based mass production of layered air-stable BP. This method uses the combination of two electron-deficient reagents 2,2,6,6-tetramethylpiperidinyl- N-oxyl (TEMPO) and triphenylcarbenium tetrafluorobor ([Ph3C]BF4) to accomplish thinning and/or passivation of BP in organic solvent. The field-effect transistor and photodetection devices constructed from the chemically modified BP flakes exhibit enhanced performances with environmental stability up to 4 months. A proof-of-concept BP thin-film transistor fabricated through the all-solution-based exfoliation and modification displays an air-stable and a typical p-type transistor behavior. This all-solution-based method improves the prospects of BP for industry applications.
Black Phosphorus Radio-Frequency Transistors

Han Wang,Xiaomu Wang,Fengnian Xia,Luhao Wang,Hao Jiang,Qiangfei Xia,Matthew L. Chin,Madan Dubey,Shu-jen Han

DOI: https://doi.org/10.1021/nl5029717

2014-10-15

Abstract:Few-layer and thin film forms of layered black phosphorus (BP) have recently emerged as a promising material for applications in high performance nanoelectronics and infrared optoelectronics. Layered BP thin film offers a moderate bandgap of around 0.3 eV and high carrier mobility, leading to transistors with decent on-off ratio and high on-state current density. Here, we demonstrate the gigahertz frequency operation of black phosphorus field-effect transistors for the first time. The BP transistors demonstrated here show excellent current saturation with an on-off ratio exceeding 2000. We achieved a current density in excess of 270 mA/mm and DC transconductance above 180 mS/mm for hole conduction. Using standard high frequency characterization techniques, we measured a short-circuit current-gain cut-off frequency fT of 12 GHz and a maximum oscillation frequency fmax of 20 GHz in 300 nm channel length devices. BP devices may offer advantages over graphene transistors for high frequency electronics in terms of voltage and power gain due to the good current saturation properties arising from their finite bandgap, thus enabling the future ubiquitous transistor technology that can operate in the multi-GHz frequency range and beyond.

Mesoscale and Nanoscale Physics

Surface Charge Transfer Doping and Effective Passivation of Black Phosphorus Field Effect Transistors

Effective Passivation of Black Phosphorus Transistor Against Ambient Degradation by an Ultra-Thin Tin Oxide Film.

Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling

Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling

Enhanced Stability of Black Phosphorus Field-Effect Transistors with Sio2 Passivation

Metal‐Ion‐Modified Black Phosphorus with Enhanced Stability and Transistor Performance

Te-Doped Black Phosphorus Field-Effect Transistors

Black phosphorus field effect transistors stable in harsh conditions via surface engineering

Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering

High-Performance Black Phosphorus Field-Effect Transistors with Long-Term Air Stability.

Surface and interface control of black phosphorus

Surface passivation of black phosphorus via van der Waals stacked PTCDA

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Surface Functionalization of Black Phosphorus Via Potassium Toward High-Performance Complementary Devices.

Optimized Transport Properties in Lithium Doped Black Phosphorus Transistors

Solution-Based Property Tuning of Black Phosphorus

Black Phosphorus Field-Effect Transistors with Improved Contact via Localized Joule Heating

Atomistic simulations of hetero-junction tunneling field-effect transistors with layered black phosphorus

Black Phosphorus Field-Effect Transistors with Work Function Tunable Contacts.

Wet Chemical Method for Black Phosphorus Thinning and Passivation.

Black Phosphorus Radio-Frequency Transistors