Abstract:Two-dimensional layered materials (2DLMs) are of considerable interest for high-performance electronic devices for their unique electronic properties and atomically thin geometry. However, the atomically thin geometry makes their electronic properties highly susceptible to the environment changes. In particular, some 2DLMs (e.g., black phosphorus (BP) and SnSe2) are unstable and could rapidly degrade over time when exposed to ambient conditions. Therefore, the development of proper passivation schemes that can preserve the intrinsic properties and enhance their lifetime represents a key challenge for these atomically thin electronic materials. Herein we introduce a simple, nondisruptive, and scalable van der Waals passivation approach by using organic thin films to simultaneously improve the performance and air stability of BP field-effect transistors (FETs). We show that dioctylbenzothienobenzothiophene (C8-BTBT) thin films can be readily deposited on BP via van der Waals epitaxy approach to protect BP against oxidation in ambient conditions over 20 d. Importantly, the noncovalent van der Waals interface between C8-BTBT and BP effectively preserves the intrinsic properties of BP, allowing us to demonstrate high-performance BP FETs with a record-high current density of 920 μA/um, hole drift velocity over 1 × 107 cm/s, and on/off ratio of 1 × 104 to ∼1 × 107 at room temperature. This approach is generally applicable to other unstable two-dimensional materials, defining a unique pathway to modulate their electronic properties and realize high-performance devices through hybrid heterojunctions.

Optimized Transport Properties in Lithium Doped Black Phosphorus Transistors

Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering

Black Phosphorus Field-Effect Transistors with Improved Contact via Localized Joule Heating

Black Phosphorus Field-Effect Transistors with Work Function Tunable Contacts.

Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling

Black Phosphorus Radio-Frequency Transistors

Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

High-speed Black Phosphorus Field-Effect Transistors Approaching Ballistic Limit

Optimized Transport of Black Phosphorus Top Gate Transistors Using Alucone Dielectrics

Black Phosphorus Transistors with Van Der Waals-type Electrical Contacts

Surface Charge Transfer Doping and Effective Passivation of Black Phosphorus Field Effect Transistors

Field‐Induced N‐doping of Black Phosphorus for CMOS Compatible 2D Logic Electronics with High Electron Mobility

High field transport of high performance black phosphorus transistors

Atomistic simulations of hetero-junction tunneling field-effect transistors with layered black phosphorus

Metal‐Ion‐Modified Black Phosphorus with Enhanced Stability and Transistor Performance

High Performance Black Phosphorus Electronic and Photonic Devices with HfLaO Dielectric

Transport Properties and Device Prospects of Ultrathin Black Phosphorus on Hexagonal Boron Nitride

High Performance Transistors Based On Two Dimensional Materials

High-Performance Black Phosphorus Field-Effect Transistors with Long-Term Air Stability.

Black phosphorus field effect transistors stable in harsh conditions via surface engineering