Abstract:Two-dimensional layered materials (2DLMs) are of considerable interest for high-performance electronic devices for their unique electronic properties and atomically thin geometry. However, the atomically thin geometry makes their electronic properties highly susceptible to the environment changes. In particular, some 2DLMs (e.g., black phosphorus (BP) and SnSe2) are unstable and could rapidly degrade over time when exposed to ambient conditions. Therefore, the development of proper passivation schemes that can preserve the intrinsic properties and enhance their lifetime represents a key challenge for these atomically thin electronic materials. Herein we introduce a simple, nondisruptive, and scalable van der Waals passivation approach by using organic thin films to simultaneously improve the performance and air stability of BP field-effect transistors (FETs). We show that dioctylbenzothienobenzothiophene (C8-BTBT) thin films can be readily deposited on BP via van der Waals epitaxy approach to protect BP against oxidation in ambient conditions over 20 d. Importantly, the noncovalent van der Waals interface between C8-BTBT and BP effectively preserves the intrinsic properties of BP, allowing us to demonstrate high-performance BP FETs with a record-high current density of 920 μA/um, hole drift velocity over 1 × 107 cm/s, and on/off ratio of 1 × 104 to ∼1 × 107 at room temperature. This approach is generally applicable to other unstable two-dimensional materials, defining a unique pathway to modulate their electronic properties and realize high-performance devices through hybrid heterojunctions.

High field transport of high performance black phosphorus transistors

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Black Phosphorus Radio-Frequency Transistors

High-speed Black Phosphorus Field-Effect Transistors Approaching Ballistic Limit

High Performance Transistors Based On Two Dimensional Materials

Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering

Black Phosphorus p-MOSFETs with High Transconductance and Nearly Ideal Subthreshold Slope

High Performance Black Phosphorus Electronic and Photonic Devices with HfLaO Dielectric

HfO2-passivated Black Phosphorus Field Effect Transistor with Long-Termed Stability and Enhanced Current On/off Ratio

Electrical characterization of fully encapsulated ultra thin black phosphorus-based heterostructures with graphene contacts

Few-Layer Black Phosphorus Carbide Field-Effect Transistor Via Carbon Doping

Black Phosphorus Radio Frequency Electronics at Cryogenic Temperatures

High Electric Field Carrier Transport and Power Dissipation in Multilayer Black Phosphorus Field Effect Transistor with Dielectric Engineering

Transport properties of ultrathin black phosphorus on hexagonal boron nitride

High-quality sandwiched black phosphorus heterostructure and its quantum oscillations

Electric field effect in ultrathin black phosphorus

High-Performance Black Phosphorus Field-Effect Transistors with Long-Term Air Stability.

Mechanisms of Current Fluctuation in Ambipolar Black Phosphorus Field-Effect Transistors

Optimized Transport of Black Phosphorus Top Gate Transistors Using Alucone Dielectrics

Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs with HfO2 Gate Dielectrics

Black Phosphorus Field-Effect Transistors with Improved Contact via Localized Joule Heating