Abstract:Metal-semiconductor contact has been the performance limiting problem for electronic devices and also dictates the scaling potential for future generation devices based on novel channel materials. Two-dimensional semiconductors beyond graphene, particularly few layer black phosphorus, have attracted much attention due to their exceptional electronic properties such as anisotropy and high mobility. However, due to its ultrathin body nature, few layer black phosphorus-metal contact behaves differently than conventional Schottky barrier (SB) junctions, and the mechanisms of its carrier transport across such a barrier remain elusive. In this work, we examine the transport characteristic of metal-black phosphorus contact under varying temperature. We elucidated the origin of apparent negative SB heights extracted from classical thermionic emission model and also the phenomenon of metal-insulator transition observed in the current-temperature transistor characteristic. In essence, we found that the SB height can be modulated by the back-gate voltage, which beyond a certain critical point becomes so low that the injected carrier can no longer be described by the conventional thermionic emission theory. The transition from transport dominated by a Maxwell-Boltzmann distribution for the high energy tail states, to that of a Fermi distribution by low energy Fermi sea electrons, is the physical origin of the observed metal-insulator transition. We identified two distinctive tunneling limited transport regimes in the contact: vertical and longitudinal tunneling.

Mechanisms of Current Fluctuation in Ambipolar Black Phosphorus Field-Effect Transistors

Performance Change of Few Layer Black Phosphorus Transistors in Ambient

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Black Phosphorus Radio-Frequency Transistors

Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering

Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling

High Electric Field Carrier Transport and Power Dissipation in Multilayer Black Phosphorus Field Effect Transistor with Dielectric Engineering

Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling

Atomistic simulations of hetero-junction tunneling field-effect transistors with layered black phosphorus

Temperature-Stable Black Phosphorus Field-Effect Transistors Through Effective Phonon Scattering Suppression On Atomic Layer Deposited Aluminum Nitride

High-speed Black Phosphorus Field-Effect Transistors Approaching Ballistic Limit

Device Performance Simulations of Multilayer Black Phosphorus Tunneling Transistors

High field transport of high performance black phosphorus transistors

High‐Performance Black Phosphorus Field‐Effect Transistors with Controllable Channel Orientation

Electronic and Transport Properties of N -Type Monolayer Black Phosphorus at Low Temperatures

Recent Developments in Black Phosphorus Transistors

Probing The Electronic States And Impurity Effects In Black Phosphorus Vertical Heterostructures

Transport Properties and Device Prospects of Ultrathin Black Phosphorus on Hexagonal Boron Nitride

Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs with HfO2 Gate Dielectrics

Anomalous Temperature Dependence in Metal-Black Phosphorus Contact.

Ballistic Transport in Monolayer Black Phosphorus Transistors