Abstract:Two-dimensional layered materials (2DLMs) are of considerable interest for high-performance electronic devices for their unique electronic properties and atomically thin geometry. However, the atomically thin geometry makes their electronic properties highly susceptible to the environment changes. In particular, some 2DLMs (e.g., black phosphorus (BP) and SnSe2) are unstable and could rapidly degrade over time when exposed to ambient conditions. Therefore, the development of proper passivation schemes that can preserve the intrinsic properties and enhance their lifetime represents a key challenge for these atomically thin electronic materials. Herein we introduce a simple, nondisruptive, and scalable van der Waals passivation approach by using organic thin films to simultaneously improve the performance and air stability of BP field-effect transistors (FETs). We show that dioctylbenzothienobenzothiophene (C8-BTBT) thin films can be readily deposited on BP via van der Waals epitaxy approach to protect BP against oxidation in ambient conditions over 20 d. Importantly, the noncovalent van der Waals interface between C8-BTBT and BP effectively preserves the intrinsic properties of BP, allowing us to demonstrate high-performance BP FETs with a record-high current density of 920 μA/um, hole drift velocity over 1 × 107 cm/s, and on/off ratio of 1 × 104 to ∼1 × 107 at room temperature. This approach is generally applicable to other unstable two-dimensional materials, defining a unique pathway to modulate their electronic properties and realize high-performance devices through hybrid heterojunctions.

Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling

Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling

High‐Performance Black Phosphorus Field‐Effect Transistors with Controllable Channel Orientation

Strain-induced Modulation on Phonon and Electronic Properties of Suspended Black Phosphorus Field Effect Transistor

Black Phosphorus Field-Effect Transistors with Work Function Tunable Contacts.

Performance Change of Few Layer Black Phosphorus Transistors in Ambient

Black Phosphorus Transistors with Van Der Waals-type Electrical Contacts

Black Phosphorus Field-Effect Transistors with Improved Contact via Localized Joule Heating

Transport Properties and Device Prospects of Ultrathin Black Phosphorus on Hexagonal Boron Nitride

Contacts between monolayer black phosphorene and metal electrodes: Ohmic, Schottky, and their regulating strategy

Black Phosphorus Radio-Frequency Transistors

Performance and Reliability Improvement under High Current Densities in Black Phosphorus Transistors by Interface Engineering

Device Performance Simulations of Multilayer Black Phosphorus Tunneling Transistors

Recent Developments in Black Phosphorus Transistors

Atomistic simulations of hetero-junction tunneling field-effect transistors with layered black phosphorus

Optimized Transport Properties in Lithium Doped Black Phosphorus Transistors

Can A Black Phosphorus Schottky Barrier Transistor Be Good Enough?

First Principles Study of Metal Contacts to Monolayer Black Phosphorous

High Electric Field Carrier Transport and Power Dissipation in Multilayer Black Phosphorus Field Effect Transistor with Dielectric Engineering

Mechanisms of Current Fluctuation in Ambipolar Black Phosphorus Field-Effect Transistors

High-Performance Black Phosphorus Field-Effect Transistors with Long-Term Air Stability.