Abstract:Bismuthene, a bismuth analogue of graphene, has a moderate band gap, has a high carrier mobility, has a topological nontriviality, has a high stability at room temperature, has an easy transferability, and is very attractive for electronics, optronics, and spintronics. The electrical contact plays a critical role in an actual device. The interfacial properties of monolayer (ML) bismuthene in contact with the metal electrodes spanning a wide work function range in a field-effect transistor configuration are systematically studied for the first time by using both first-principles electronic structure calculations and quantum transport simulations. The ML bismuthene always undergoes metallization upon contact with the six metal electrodes owing to a strong interaction. According to the quantum transport simulations, apparent metal-induced gap states (MIGSs) formed in the semiconductor-metal interface give rise to a strong Fermi-level pinning. As a result, the ML bismuthene forms an n-type Schottky contact with Ir/Ag/Ti electrodes with electron Schottky barrier heights (SBHs) of 0.17, 0.22, and 0.25 eV, respectively, and a p-type Schottky contact with Pt/Al/Au electrodes with hole SBHs of 0.09, 0.16, and 0.38 eV, respectively. The effective channel length of the ML bismuthene transistors is also significantly reduced by the MIGSs. However, the MIGSs are eliminated and the effective channel length is increased when ML graphene is used as an electrode, accompanied by a small hole SBH of 0.06 eV (quasi-Ohmic contact). Hence, an insight is provided into the interfacial properties of the ML bismuthene-metal composite systems and a guidance is provided for the choice of metal electrodes in ML bismuthene devices.

First Principles Study of Metal Contacts to Monolayer Black Phosphorous

Contacts between monolayer black phosphorene and metal electrodes: Ohmic, Schottky, and their regulating strategy

Electrical contacts to monolayer black phosphorus: A first-principles investigation

Electrical contacts to monolayer black Phosphorus: a first principles investigation

Black Phosphorus Transistors with Van Der Waals-type Electrical Contacts

Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling

Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling

Ohmic contact engineering in few-layer black Phosphorus field effect transistors

Theoretical Study of Intercalation Effects: Graphene and hBN Layers in Metal and Monolayer Black Phosphorus Contacts

Black Phosphorus Field-Effect Transistors with Work Function Tunable Contacts.

Monolayer Bismuthene-Metal Contacts: A Theoretical Study

Monolayer Phosphorene–Metal Contacts

New Method to Determine the Schottky Barrier in Few-Layer Black Phosphorus Metal Contacts

Ideal Electrodes for Monolayer Boron Phosphide and Their Device Performance

Prospects of Zero Schottky Barrier Height in a Graphene Inserted MoS2-Metal Interface

Electrical contacts in monolayer blue phosphorene devices

Anomalous Temperature Dependence in Metal-Black Phosphorus Contact.

Dielectric Material for Monolayer Black Phosphorus Transistors: A First-Principles Investigation

Interfacial contact and electronic properties in the heterojunction based on black phosphorus and borophene

Black Phosphorus Field-Effect Transistors with Improved Contact via Localized Joule Heating

The Contact Properties of Monolayer and Multilayer MoS2-Metal van der Waals Interfaces