Abstract:Two-dimensional black phosphorene (BP) has attracted much interest for application in electronic devices. Contacts between BP and metal electrodes are critical components of BP-based devices and can dramatically affect device performances. In this paper, we adopted first-principles calculations to explore binding energies, electronic structures, and potential distribution for interface systems of Al-, Au-, Cu-, Ni-, and Ti-monolayer BP in surface contact and edge contact (EC) types. Moreover, we also used density functional theoretical coupled with the nonequilibrium Green's function method to investigate contact resistances and Schottky barrier heights (SBHs) for transport systems of monolayer BP with Al, Au, Cu, Ni, and Ti electrodes. Our calculated results indicate that the contact type between BP and metals may greatly affect electrical properties of BP–metal contacts. Changing contact type between metal electrodes and BP channel can change the type of Schottky barrier of metal–BP contacts. The contact barrier of metal–BP depends on the metal material. Selecting an appropriate contact type and metal can effectively regulate the contact barrier of metal–BP. Specifically exciting, our estimated lateral SBHs for the Ni–BP system in EC-type agree well with the experimental results. We have provided a new strategy on choosing an appropriate contact type to achieve low contact resistance for the metal–BP interface.

Interfacial contact and electronic properties in the heterojunction based on black phosphorus and borophene

Interfacial properties of black phosphorus/transition metal carbide van der Waals heterostructures

Contacts between monolayer black phosphorene and metal electrodes: Ohmic, Schottky, and their regulating strategy

Electronic Properties of Phosphorene/Graphene and Phosphorene/Hexagonal Boron Nitride Heterostructures

Contact Properties of a Vdw Heterostructure Composed of Penta-Graphene and Penta-Bn2 Sheets

Device Perspective for Black Phosphorus Field-Effect Transistors: Contact Resistance, Ambipolar and Scaling

Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling

Electronic properties of Borophene/InSe van der Waals heterostructures

Black Phosphorus Transistors with Van Der Waals-type Electrical Contacts

Interfacial Electronic Properties and Adjustable Schottky Barrier at Graphene/CsPbI3 Van Der Waals Heterostructures

Tuning the p-type Schottky barrier in 2D metal/semiconductor interface: boron-sheet/\mose, and /\wse

Effect of edge contact on electronic transport in lateral Borophene/WTe2/Borophene heterojunctions

Theoretical Study of Intercalation Effects: Graphene and hBN Layers in Metal and Monolayer Black Phosphorus Contacts

van der Waals Bonded Co/h-BN Contacts to Ultrathin Black Phosphorus Devices

Interfacial Properties of Borophene Contacts with Two-Dimensional Semiconductors.

Black Phosphorus Field-Effect Transistors with Work Function Tunable Contacts.

Two-dimensional Phosphorene/c3n P-N Heterostructure: Effect of Contact Type on Electronic and Optical Properties

Transport Properties and Device Prospects of Ultrathin Black Phosphorus on Hexagonal Boron Nitride

Band Structure Engineering of Black Phosphorus/Graphene/MoS2 Van Der Waals Heterojunctions for Photovoltaic and Optoelectronic Device Application

Probing The Electronic States And Impurity Effects In Black Phosphorus Vertical Heterostructures

Surface and interface control of black phosphorus