Dielectric Material for Monolayer Black Phosphorus Transistors: A First-Principles Investigation

Qing Shi,Hong Guo,Fei Liu
DOI: https://doi.org/10.1109/sispad.2015.7292257
2015-01-01
Abstract:Using advanced parameter-free first-principles calculations, we suggested that corundum (a-Al 2 O 3 ) is a promising candidate of the dielectric materials for monolayer black-phosphorus (BP). Hydrogen passivated Al 2 O 3 is preferred to avoid metallization with monolayer BP. Clean interface is found between monolayer BP and H-terminated Al 2 O 3 . The valence-band offset for these systems is around 0.9eV, which is appropriate to create a reasonable carrier injection barrier. Moreover, orientation effect is found to be of great significance for these systems. Special orientation can generate an indirect band gap for monolayer BP.
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